CN115346987B - 一种存储单元、3d存储器及其制备方法、电子设备 - Google Patents

一种存储单元、3d存储器及其制备方法、电子设备 Download PDF

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CN115346987B
CN115346987B CN202211269945.4A CN202211269945A CN115346987B CN 115346987 B CN115346987 B CN 115346987B CN 202211269945 A CN202211269945 A CN 202211269945A CN 115346987 B CN115346987 B CN 115346987B
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substrate
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CN115346987A (zh
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戴瑾
余泳
梁静
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Beijing Superstring Academy of Memory Technology
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Beijing Superstring Academy of Memory Technology
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Priority to KR1020237035882A priority patent/KR20250088678A/ko
Priority to EP22955194.0A priority patent/EP4380330A4/en
Priority to JP2023552547A priority patent/JP2025536163A/ja
Priority to PCT/CN2022/137319 priority patent/WO2024082394A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202211269945.4A 2022-10-18 2022-10-18 一种存储单元、3d存储器及其制备方法、电子设备 Active CN115346987B (zh)

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Application Number Priority Date Filing Date Title
CN202211269945.4A CN115346987B (zh) 2022-10-18 2022-10-18 一种存储单元、3d存储器及其制备方法、电子设备
KR1020237035882A KR20250088678A (ko) 2022-10-18 2022-12-07 저장 유닛, 3d 메모리 및 그 제조 방법, 전자 장비
EP22955194.0A EP4380330A4 (en) 2022-10-18 2022-12-07 MEMORY CELL, 3D MEMORY AND PREPARATION METHOD THEREOF, AND ELECTRONIC DEVICE
JP2023552547A JP2025536163A (ja) 2022-10-18 2022-12-07 記憶ユニット、３ｄメモリ及びその製造方法、電子装置
PCT/CN2022/137319 WO2024082394A1 (zh) 2022-10-18 2022-12-07 存储单元、3d存储器及其制备方法、电子设备
US18/312,389 US11825642B1 (en) 2022-10-18 2023-05-04 Memory cell, 3D memory and preparation method therefor, and electronic device

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Cited By (1)

* Cited by examiner, † Cited by third party
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US12666588B2 (en) * 2022-05-24 2026-06-23 Changxin Memory Technologies, Inc. Semiconductor structure and method for forming semiconductor structure

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US11825642B1 (en) 2022-10-18 2023-11-21 Beijing Superstring Academy Of Memory Technology Memory cell, 3D memory and preparation method therefor, and electronic device
CN115346988B (zh) * 2022-10-18 2023-01-24 北京超弦存储器研究院 一种晶体管、3d存储器及其制备方法、电子设备
CN115346987B (zh) * 2022-10-18 2023-01-10 北京超弦存储器研究院 一种存储单元、3d存储器及其制备方法、电子设备
CN115915754B (zh) * 2022-11-17 2025-10-14 长鑫存储技术有限公司 半导体器件及其制备方法
CN115835626B (zh) * 2022-12-22 2024-04-09 北京超弦存储器研究院 3d堆叠的半导体器件、3d存储器及其制备方法、电子设备
CN117425341A (zh) * 2023-01-31 2024-01-19 北京超弦存储器研究院 一种3d堆叠的半导体器件、阵列及其制造方法、电子设备
CN115867026B (zh) * 2023-02-23 2023-07-18 北京超弦存储器研究院 半导体结构、存储器及其制造方法、电子设备
CN116347889B (zh) * 2023-03-14 2024-01-12 北京超弦存储器研究院 存储单元、存储器、存储器的制备方法及电子设备
WO2024187732A1 (zh) * 2023-03-14 2024-09-19 北京超弦存储器研究院 存储器及其制备方法、电子设备
CN115995494B (zh) * 2023-03-23 2023-07-14 北京超弦存储器研究院 晶体管、3d堆叠的半导体器件及其制造方法、电子设备
CN118742019B (zh) * 2023-03-31 2025-08-05 北京超弦存储器研究院 存储器及其制造方法、电子设备
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CN116761426B (zh) * 2023-05-09 2025-01-17 长鑫存储技术有限公司 存储单元、存储阵列及存储阵列的制备方法
CN119136534B (zh) * 2023-06-06 2025-09-26 长鑫存储技术有限公司 一种半导体结构及其制作方法
CN116709773B (zh) * 2023-07-12 2026-07-31 长鑫科技集团股份有限公司 半导体结构及其制备方法
KR102792830B1 (ko) * 2023-10-04 2025-04-07 한양대학교 산학협력단 올 어라운드 채널을 갖는 트랜지스터 수직 적층 구조 기반 4f2용 dram 소자 및 이의 제조방법
CN119947079B (zh) * 2023-11-02 2025-11-28 北京超弦存储器研究院 半导体结构、半导体结构的制备方法以及电子设备
CN120076314B (zh) * 2023-11-28 2025-11-28 长鑫科技集团股份有限公司 半导体结构及其形成方法、存储器
CN117715419B (zh) * 2024-02-06 2024-04-19 北京超弦存储器研究院 存储单元、存储器、存储器的制备方法、芯片及电子设备
CN120857496A (zh) * 2024-04-28 2025-10-28 北京超弦存储器研究院 半导体器件及其制造方法、电子设备
CN118201358B (zh) * 2024-05-15 2024-07-16 北京超弦存储器研究院 一种半导体器件及其制造方法、电子设备
CN118234233B (zh) * 2024-05-22 2024-07-23 北京超弦存储器研究院 一种半导体器件及其制造方法、电子设备
CN121604390A (zh) * 2024-08-19 2026-03-03 北京超弦存储器研究院 存储单元、存储器及其制备方法、电子设备
CN119418735B (zh) * 2025-01-06 2025-05-13 北京大学 存储单元、数据读写电路、存储器及其制备方法

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CN116686399A (zh) * 2021-03-08 2023-09-01 华为技术有限公司 半导体装置、电子设备、晶体管的形成方法
CN114864583A (zh) * 2022-05-12 2022-08-05 中国科学院微电子研究所 一种无电容dram单元结构及制造方法
CN115020480B (zh) * 2022-05-31 2026-07-24 长鑫存储技术有限公司 半导体结构
CN115346987B (zh) * 2022-10-18 2023-01-10 北京超弦存储器研究院 一种存储单元、3d存储器及其制备方法、电子设备

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Publication number Priority date Publication date Assignee Title
US12666588B2 (en) * 2022-05-24 2026-06-23 Changxin Memory Technologies, Inc. Semiconductor structure and method for forming semiconductor structure

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CN115346987A (zh) 2022-11-15
WO2024082394A1 (zh) 2024-04-25
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JP2025536163A (ja) 2025-11-05
KR20250088678A (ko) 2025-06-17

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