KR20250088678A - 저장 유닛, 3d 메모리 및 그 제조 방법, 전자 장비 - Google Patents

저장 유닛, 3d 메모리 및 그 제조 방법, 전자 장비 Download PDF

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Publication number
KR20250088678A
KR20250088678A KR1020237035882A KR20237035882A KR20250088678A KR 20250088678 A KR20250088678 A KR 20250088678A KR 1020237035882 A KR1020237035882 A KR 1020237035882A KR 20237035882 A KR20237035882 A KR 20237035882A KR 20250088678 A KR20250088678 A KR 20250088678A
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South Korea
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electrode
semiconductor layer
substrate
gate
contact region
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English (en)
Korean (ko)
Inventor
진 다이
융 위
징 량
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베이징 수퍼스트링 아카데미 오브 메모리 테크놀로지
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Publication of KR20250088678A publication Critical patent/KR20250088678A/ko
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020237035882A 2022-10-18 2022-12-07 저장 유닛, 3d 메모리 및 그 제조 방법, 전자 장비 Pending KR20250088678A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN202211269945.4A CN115346987B (zh) 2022-10-18 2022-10-18 一种存储单元、3d存储器及其制备方法、电子设备
CN202211269945.4 2022-10-18
PCT/CN2022/137319 WO2024082394A1 (zh) 2022-10-18 2022-12-07 存储单元、3d存储器及其制备方法、电子设备

Publications (1)

Publication Number Publication Date
KR20250088678A true KR20250088678A (ko) 2025-06-17

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KR1020237035882A Pending KR20250088678A (ko) 2022-10-18 2022-12-07 저장 유닛, 3d 메모리 및 그 제조 방법, 전자 장비

Country Status (5)

Country Link
EP (1) EP4380330A4 (enExample)
JP (1) JP2025536163A (enExample)
KR (1) KR20250088678A (enExample)
CN (1) CN115346987B (enExample)
WO (1) WO2024082394A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117177556B (zh) * 2022-05-24 2026-07-24 长鑫存储技术有限公司 半导体结构及其形成方法
US11825642B1 (en) 2022-10-18 2023-11-21 Beijing Superstring Academy Of Memory Technology Memory cell, 3D memory and preparation method therefor, and electronic device
CN115346988B (zh) * 2022-10-18 2023-01-24 北京超弦存储器研究院 一种晶体管、3d存储器及其制备方法、电子设备
CN115346987B (zh) * 2022-10-18 2023-01-10 北京超弦存储器研究院 一种存储单元、3d存储器及其制备方法、电子设备
CN115915754B (zh) * 2022-11-17 2025-10-14 长鑫存储技术有限公司 半导体器件及其制备方法
CN115835626B (zh) * 2022-12-22 2024-04-09 北京超弦存储器研究院 3d堆叠的半导体器件、3d存储器及其制备方法、电子设备
CN117425341A (zh) * 2023-01-31 2024-01-19 北京超弦存储器研究院 一种3d堆叠的半导体器件、阵列及其制造方法、电子设备
CN115867026B (zh) * 2023-02-23 2023-07-18 北京超弦存储器研究院 半导体结构、存储器及其制造方法、电子设备
CN116347889B (zh) * 2023-03-14 2024-01-12 北京超弦存储器研究院 存储单元、存储器、存储器的制备方法及电子设备
WO2024187732A1 (zh) * 2023-03-14 2024-09-19 北京超弦存储器研究院 存储器及其制备方法、电子设备
CN115995494B (zh) * 2023-03-23 2023-07-14 北京超弦存储器研究院 晶体管、3d堆叠的半导体器件及其制造方法、电子设备
CN118742019B (zh) * 2023-03-31 2025-08-05 北京超弦存储器研究院 存储器及其制造方法、电子设备
CN116249348B (zh) * 2023-04-13 2024-02-20 北京超弦存储器研究院 存储器及其访问方法、电子设备
CN116761426B (zh) * 2023-05-09 2025-01-17 长鑫存储技术有限公司 存储单元、存储阵列及存储阵列的制备方法
CN119136534B (zh) * 2023-06-06 2025-09-26 长鑫存储技术有限公司 一种半导体结构及其制作方法
CN116709773B (zh) * 2023-07-12 2026-07-31 长鑫科技集团股份有限公司 半导体结构及其制备方法
KR102792830B1 (ko) * 2023-10-04 2025-04-07 한양대학교 산학협력단 올 어라운드 채널을 갖는 트랜지스터 수직 적층 구조 기반 4f2용 dram 소자 및 이의 제조방법
CN119947079B (zh) * 2023-11-02 2025-11-28 北京超弦存储器研究院 半导体结构、半导体结构的制备方法以及电子设备
CN120076314B (zh) * 2023-11-28 2025-11-28 长鑫科技集团股份有限公司 半导体结构及其形成方法、存储器
CN117715419B (zh) * 2024-02-06 2024-04-19 北京超弦存储器研究院 存储单元、存储器、存储器的制备方法、芯片及电子设备
CN120857496A (zh) * 2024-04-28 2025-10-28 北京超弦存储器研究院 半导体器件及其制造方法、电子设备
CN118201358B (zh) * 2024-05-15 2024-07-16 北京超弦存储器研究院 一种半导体器件及其制造方法、电子设备
CN118234233B (zh) * 2024-05-22 2024-07-23 北京超弦存储器研究院 一种半导体器件及其制造方法、电子设备
CN121604390A (zh) * 2024-08-19 2026-03-03 北京超弦存储器研究院 存储单元、存储器及其制备方法、电子设备
CN119418735B (zh) * 2025-01-06 2025-05-13 北京大学 存储单元、数据读写电路、存储器及其制备方法

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US7742328B2 (en) * 2007-06-15 2010-06-22 Grandis, Inc. Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
CN116686399A (zh) * 2021-03-08 2023-09-01 华为技术有限公司 半导体装置、电子设备、晶体管的形成方法
CN114864583A (zh) * 2022-05-12 2022-08-05 中国科学院微电子研究所 一种无电容dram单元结构及制造方法
CN115020480B (zh) * 2022-05-31 2026-07-24 长鑫存储技术有限公司 半导体结构
CN115346987B (zh) * 2022-10-18 2023-01-10 北京超弦存储器研究院 一种存储单元、3d存储器及其制备方法、电子设备

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EP4380330A4 (en) 2025-07-16
CN115346987A (zh) 2022-11-15
WO2024082394A1 (zh) 2024-04-25
EP4380330A1 (en) 2024-06-05
CN115346987B (zh) 2023-01-10
JP2025536163A (ja) 2025-11-05

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