JP2024512805A - 集積回路アセンブリ埋め込み用に使用されるアセンブリ並びにその用途及び製造方法 - Google Patents

集積回路アセンブリ埋め込み用に使用されるアセンブリ並びにその用途及び製造方法 Download PDF

Info

Publication number
JP2024512805A
JP2024512805A JP2023561117A JP2023561117A JP2024512805A JP 2024512805 A JP2024512805 A JP 2024512805A JP 2023561117 A JP2023561117 A JP 2023561117A JP 2023561117 A JP2023561117 A JP 2023561117A JP 2024512805 A JP2024512805 A JP 2024512805A
Authority
JP
Japan
Prior art keywords
components
amalgam
release layer
assembly
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023561117A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024512805A5 (cg-RX-API-DMAC7.html
Inventor
シーツ,ジェイナ
Original Assignee
テレサーキッツ コーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by テレサーキッツ コーポレーション filed Critical テレサーキッツ コーポレーション
Publication of JP2024512805A publication Critical patent/JP2024512805A/ja
Publication of JP2024512805A5 publication Critical patent/JP2024512805A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662Laminate layers, e.g. stacks of alternating high-k metal oxides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/016Manufacture or treatment using moulds
    • H10W74/017Auxiliary layers for moulds, e.g. release layers or layers preventing residue
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/10Configurations of laterally-adjacent chips

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Powder Metallurgy (AREA)
JP2023561117A 2021-04-01 2022-03-30 集積回路アセンブリ埋め込み用に使用されるアセンブリ並びにその用途及び製造方法 Pending JP2024512805A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163169658P 2021-04-01 2021-04-01
US63/169,658 2021-04-01
PCT/US2022/022532 WO2022212492A2 (en) 2021-04-01 2022-03-30 Assemblies used for embedding integrated circuit assemblies, and their uses and method of fabrication thereof

Publications (2)

Publication Number Publication Date
JP2024512805A true JP2024512805A (ja) 2024-03-19
JP2024512805A5 JP2024512805A5 (cg-RX-API-DMAC7.html) 2025-04-07

Family

ID=81585417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023561117A Pending JP2024512805A (ja) 2021-04-01 2022-03-30 集積回路アセンブリ埋め込み用に使用されるアセンブリ並びにその用途及び製造方法

Country Status (7)

Country Link
US (1) US20220319829A1 (cg-RX-API-DMAC7.html)
EP (1) EP4315414A2 (cg-RX-API-DMAC7.html)
JP (1) JP2024512805A (cg-RX-API-DMAC7.html)
KR (1) KR20230164117A (cg-RX-API-DMAC7.html)
CN (1) CN117242568A (cg-RX-API-DMAC7.html)
TW (1) TW202249543A (cg-RX-API-DMAC7.html)
WO (1) WO2022212492A2 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12596306B2 (en) * 2021-11-11 2026-04-07 Terecircuits Corporation Photochemical and thermal release layer processes and uses in device manufacturing
US12611840B1 (en) * 2022-09-14 2026-04-28 Apple Inc. Electronic devices with modified covers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070134849A1 (en) * 2005-11-23 2007-06-14 Jan Vanfleteren Method for embedding dies
US20180130760A1 (en) * 2016-11-07 2018-05-10 Industrial Technology Research Institute Chip package and chip packaging method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053195A (en) 1989-07-19 1991-10-01 Microelectronics And Computer Technology Corp. Bonding amalgam and method of making
US6132676A (en) 1997-06-30 2000-10-17 Massachusetts Institute Of Technology Minimal thermal expansion, high thermal conductivity metal-ceramic matrix composite
US6358567B2 (en) 1998-12-23 2002-03-19 The Regents Of The University Of California Colloidal spray method for low cost thin coating deposition
US7141348B2 (en) 2003-05-23 2006-11-28 Intelleflex Corporation Lamination and delamination technique for thin film processing
US6946178B2 (en) 2003-05-23 2005-09-20 James Sheats Lamination and delamination technique for thin film processing
US7300824B2 (en) 2005-08-18 2007-11-27 James Sheats Method of packaging and interconnection of integrated circuits
US20100078496A1 (en) 2008-09-29 2010-04-01 Sono-Tek Corporation Methods and systems for ultrasonic spray shaping
US8922021B2 (en) 2011-12-30 2014-12-30 Deca Technologies Inc. Die up fully molded fan-out wafer level packaging
US9455160B2 (en) * 2013-01-14 2016-09-27 Infineon Technologies Ag Method for fabricating a semiconductor chip panel
US11024608B2 (en) * 2017-03-28 2021-06-01 X Display Company Technology Limited Structures and methods for electrical connection of micro-devices and substrates
TWI734175B (zh) * 2019-08-21 2021-07-21 矽品精密工業股份有限公司 電子封裝件及其製法與電子封裝模組

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070134849A1 (en) * 2005-11-23 2007-06-14 Jan Vanfleteren Method for embedding dies
US20180130760A1 (en) * 2016-11-07 2018-05-10 Industrial Technology Research Institute Chip package and chip packaging method

Also Published As

Publication number Publication date
WO2022212492A3 (en) 2022-11-10
TW202249543A (zh) 2022-12-16
CN117242568A (zh) 2023-12-15
WO2022212492A2 (en) 2022-10-06
EP4315414A2 (en) 2024-02-07
US20220319829A1 (en) 2022-10-06
KR20230164117A (ko) 2023-12-01

Similar Documents

Publication Publication Date Title
KR101870169B1 (ko) 재배선층을 가지는 반도체 패키지 및 이의 제조방법
US5746868A (en) Method of manufacturing multilayer circuit substrate
US9013037B2 (en) Semiconductor package with improved pillar bump process and structure
KR101161572B1 (ko) 양면 전극 구조의 반도체 장치 및 그 제조 방법
US9048225B2 (en) Semiconductor device and method for manufacturing semiconductor device
TWI426542B (zh) 三維積層構造之半導體裝置及其製造方法
CN103515305B (zh) 3d ic堆叠器件及制造方法
US9564364B2 (en) Semiconductor device, semiconductor package, method for manufacturing semiconductor device, and method for manufacturing semiconductor package
US7910403B2 (en) Metal particles-dispersed composition and flip chip mounting process and bump-forming process using the same
US8193040B2 (en) Manufacturing of a device including a semiconductor chip
US11955460B2 (en) Advanced info POP and method of forming thereof
JP2024512805A (ja) 集積回路アセンブリ埋め込み用に使用されるアセンブリ並びにその用途及び製造方法
JP5385471B2 (ja) 半導体装置の製造方法
CN112930588A (zh) 半导体装置与烧结纳米粒子的连接
CN102656677A (zh) 半导体装置和该半导体装置的制造方法
US7851342B2 (en) In-situ formation of conductive filling material in through-silicon via
US7763977B2 (en) Semiconductor device and manufacturing method therefor
CN100527373C (zh) 半导体器件及其制造方法
US20240234229A1 (en) Method for making a semiconductor device using a double side molding technology
TW202520381A (zh) 半導體裝置及用強脈衝光照射製造重分佈層的方法
JP4440494B2 (ja) 半導体装置の製造方法
JP6788344B2 (ja) 電子部品及び電子部品の製造方法
US20260123503A1 (en) Method of manufacturing a semiconductor device
JP2017069257A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250328

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250328

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260407