JP2024070722A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2024070722A5 JP2024070722A5 JP2022181395A JP2022181395A JP2024070722A5 JP 2024070722 A5 JP2024070722 A5 JP 2024070722A5 JP 2022181395 A JP2022181395 A JP 2022181395A JP 2022181395 A JP2022181395 A JP 2022181395A JP 2024070722 A5 JP2024070722 A5 JP 2024070722A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- high frequency
- frequency device
- soi
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022181395A JP7609154B2 (ja) | 2022-11-11 | 2022-11-11 | 高周波デバイス用基板およびその製造方法 |
| PCT/JP2023/034915 WO2024101019A1 (ja) | 2022-11-11 | 2023-09-26 | 高周波デバイス用基板およびその製造方法 |
| CN202380076157.XA CN120092503A (zh) | 2022-11-11 | 2023-09-26 | 高频装置用基板及其制造方法 |
| KR1020257014890A KR20250109681A (ko) | 2022-11-11 | 2023-09-26 | 고주파 디바이스용 기판 및 그의 제조 방법 |
| EP23888372.2A EP4618154A1 (en) | 2022-11-11 | 2023-09-26 | Substrate for high frequency devices and method for producing same |
| TW112137324A TW202441040A (zh) | 2022-11-11 | 2023-09-28 | 高頻元件用基板及其製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022181395A JP7609154B2 (ja) | 2022-11-11 | 2022-11-11 | 高周波デバイス用基板およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024070722A JP2024070722A (ja) | 2024-05-23 |
| JP2024070722A5 true JP2024070722A5 (enExample) | 2024-06-06 |
| JP7609154B2 JP7609154B2 (ja) | 2025-01-07 |
Family
ID=91032261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022181395A Active JP7609154B2 (ja) | 2022-11-11 | 2022-11-11 | 高周波デバイス用基板およびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP4618154A1 (enExample) |
| JP (1) | JP7609154B2 (enExample) |
| KR (1) | KR20250109681A (enExample) |
| CN (1) | CN120092503A (enExample) |
| TW (1) | TW202441040A (enExample) |
| WO (1) | WO2024101019A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN121240531B (zh) * | 2025-12-01 | 2026-04-28 | 上海超硅半导体股份有限公司 | 绝缘体上半导体的制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9331153B2 (en) * | 2013-12-13 | 2016-05-03 | Raytheon Company | Methods and structures for forming microstrip transmission lines on thin silicon on insulator (SOI) wafers |
| WO2015112308A1 (en) | 2014-01-23 | 2015-07-30 | Sunedison Semiconductor Limited | High resistivity soi wafers and a method of manufacturing thereof |
| SG10202106913TA (en) * | 2016-06-08 | 2021-08-30 | Globalwafers Co Ltd | High resistivity single crystal silicon ingot and wafer having improved mechanical strength |
| TWI793755B (zh) * | 2016-06-14 | 2023-02-21 | 美商克若密斯股份有限公司 | 用於功率及rf應用的工程基板結構 |
| FR3062517B1 (fr) | 2017-02-02 | 2019-03-15 | Soitec | Structure pour application radiofrequence |
| US10943813B2 (en) * | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
| US20230279581A1 (en) * | 2020-08-18 | 2023-09-07 | Shin-Etsu Handotai Co., Ltd. | Method for producing nitride semiconductor wafer and nitride semiconductor wafer |
-
2022
- 2022-11-11 JP JP2022181395A patent/JP7609154B2/ja active Active
-
2023
- 2023-09-26 EP EP23888372.2A patent/EP4618154A1/en active Pending
- 2023-09-26 CN CN202380076157.XA patent/CN120092503A/zh active Pending
- 2023-09-26 KR KR1020257014890A patent/KR20250109681A/ko active Pending
- 2023-09-26 WO PCT/JP2023/034915 patent/WO2024101019A1/ja not_active Ceased
- 2023-09-28 TW TW112137324A patent/TW202441040A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2980497B2 (ja) | 誘電体分離型バイポーラトランジスタの製造方法 | |
| JP2856030B2 (ja) | 結合ウエーハの製造方法 | |
| JP2021027186A5 (enExample) | ||
| JP2001210810A (ja) | 半導体ウェハ及びその製作法 | |
| TW200416813A (en) | Method of producing SOI wafer and SOI wafer | |
| JP2008521229A5 (enExample) | ||
| CN103579103A (zh) | 三维叠层封装方法以及影像传感器的制作方法 | |
| JP3480480B2 (ja) | Ｓｏｉ基板の製造方法 | |
| JP2011071193A5 (ja) | 貼合せｓｏｉウェーハの製造方法 | |
| JP2003347522A5 (enExample) | ||
| JPS6354740A (ja) | 集積回路基板の製造方法 | |
| JPH01133341A (ja) | 半導体基板の製造方法及び半導体装置の製造方法 | |
| CN115472493B (zh) | 一种碳化硅晶圆加工方法 | |
| JPH02170514A (ja) | 半導体装置製造のためのシリコンウェーハ相互接着方法 | |
| JPH04199632A (ja) | Ｓｏｉウエハ及びその製造方法 | |
| JPH02219252A (ja) | 半導体装置の製造方法 | |
| JP3034528B2 (ja) | 半導体装置の製造方法 | |
| JP2005057147A5 (enExample) | ||
| JP2608443B2 (ja) | 半導体ウエハの製造方法 | |
| JPH08316441A (ja) | 半導体基板の製造方法 | |
| JPH01289124A (ja) | 半導体装置の製造方法 | |
| JPH06296002A (ja) | 半導体素子の製造方法 | |
| JPH0645429A (ja) | 半導体装置の製造方法 | |
| RU2003124793A (ru) | Способ изготовления гетероструктуры | |
| JPH0448618A (ja) | 半導体装置の製造方法 |