WO2024101019A1 - 高周波デバイス用基板およびその製造方法 - Google Patents

高周波デバイス用基板およびその製造方法 Download PDF

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WO2024101019A1
WO2024101019A1 PCT/JP2023/034915 JP2023034915W WO2024101019A1 WO 2024101019 A1 WO2024101019 A1 WO 2024101019A1 JP 2023034915 W JP2023034915 W JP 2023034915W WO 2024101019 A1 WO2024101019 A1 WO 2024101019A1
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substrate
high frequency
layer
soi
frequency device
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French (fr)
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和徳 萩本
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Shin-Etsu Handotai Co Ltd
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Shin-Etsu Handotai Co Ltd
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Priority to CN202380076157.XA priority Critical patent/CN120092503A/zh
Priority to KR1020257014890A priority patent/KR20250109681A/ko
Priority to EP23888372.2A priority patent/EP4618154A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

Definitions

  • the present invention relates to a substrate for a high-frequency device and a method for manufacturing the same.
  • Nitride semiconductors such as GaN
  • GaN are expected to be the next generation of semiconductor materials that will surpass the limitations of silicon as a material.
  • high frequency devices have been manufactured by epitaxially growing nitride semiconductors on silicon single crystal substrates.
  • high frequency devices suffer from degradation of characteristics due to the substrate, losses due to the substrate, and degradation of second and third harmonic characteristics.
  • High-resistivity substrates are generally used for high-frequency device substrates, and epitaxial growth of GaN layers and the like is performed to create high-frequency devices.
  • a high-resistivity substrate is used to prevent signals from flowing from the epitaxial layer to the underlying Si substrate.
  • the nitride semiconductor epitaxial layer is stacked by devising a buffer layer as a stress relaxation layer.
  • TR substrates with a TR (trap rich) layer are generally used as substrates for high-frequency devices, and the frequency characteristics are improved by using a high resistivity substrate.
  • Patent Document 1 and other documents describe a TR layer, a dielectric layer (buried oxide film), and a semiconductor layer on a high resistivity base substrate.
  • a GaN on TRSOI substrate which combines a TRSOI substrate with a GaN layer that has excellent high-frequency characteristics, is considered to be promising.
  • the second harmonic characteristics are sometimes not improved due to the influence of the characteristics (resistivity and oxygen concentration) of the Si substrate.
  • the present invention has been made to solve the above problems, and aims to provide a substrate for high-frequency devices with excellent high-frequency characteristics and a method for manufacturing the same.
  • the present invention provides a substrate for a high frequency device, comprising a nitride semiconductor film formed on an SOI substrate,
  • the SOI substrate is a TRSOI substrate in which a trap rich layer formed on a base substrate and an SOI layer made of single crystal silicon are bonded via an oxide film,
  • the SOI layer has a resistivity of 1 k ⁇ cm or more, a crystal plane orientation of (111), and an oxygen concentration of 14.8 ppma or less.
  • the substrate on which the nitride semiconductor film is formed is a TRSOI substrate, and the SOI layer of the TRSOI substrate has a high resistivity of 1 k ⁇ cm or more and an oxygen concentration within the above-mentioned range, the substrate can be used as a high frequency device substrate having excellent high frequency characteristics.
  • the 2HD was limited to about -91 dBm, but in the present invention, the 2HD can be further reduced, making it possible to exhibit even better harmonic characteristics.
  • the SOI layer has the above crystal plane orientation, the nitride semiconductor film on the SOI layer is well formed.
  • the SOI layer can have an oxygen concentration of 5.2 ppma or less, and can have even more excellent high frequency characteristics. Furthermore, the SOI layer can have an oxygen concentration of 0.5 ppma or less, and the high frequency characteristics can be made even more excellent.
  • the base substrate may be a CZ silicon single crystal substrate having a (100) crystal plane orientation.
  • Base substrates with a crystal plane orientation (100) produced by the CZ method tend to have good production yields and are inexpensive and of high quality, which in turn makes them inexpensive and high-precision substrates for high-frequency devices.
  • the base substrate may have a resistivity of 1 k ⁇ cm or more. If the base substrate has a high resistivity of 1 k ⁇ cm or more, the high frequency characteristics can be improved.
  • the present invention also provides a method for manufacturing a high frequency device substrate having a nitride semiconductor film formed on an SOI substrate, comprising the steps of: A step of preparing a TRSOI substrate as the SOI substrate, in which a trap rich layer formed on a base substrate and a bond substrate made of silicon single crystal are bonded to each other via an oxide film, and the bond substrate is thinned to form an SOI layer; forming the nitride semiconductor film on the SOI layer;
  • the present invention provides a method for producing a substrate for a high frequency device, characterized in that the bond substrate has a resistivity of 1 k ⁇ cm or more, a crystal plane orientation of (111), and an oxygen concentration of 14.8 ppma or less.
  • the manufacturing method of the present invention makes it possible to manufacture substrates for high frequency devices that have excellent high frequency characteristics (e.g., second harmonic characteristics), and also makes it possible to form nitride semiconductor films satisfactorily.
  • high frequency characteristics e.g., second harmonic characteristics
  • the bond substrate can have an oxygen concentration of 5.2 ppma or less, and it is possible to obtain a substrate with even more excellent high frequency characteristics. Furthermore, the bond substrate can have an oxygen concentration of 0.5 ppma or less, and thus the high frequency characteristics can be further improved.
  • the base substrate may be a CZ silicon single crystal substrate having a (100) crystal plane orientation. It is possible to prepare a high-quality base substrate having a (100) crystal plane orientation at low cost.
  • the base substrate may have a resistivity of 1 k ⁇ cm or more. In this way, it is possible to obtain a product with better high frequency characteristics.
  • the high frequency device substrate and manufacturing method of the present invention make it possible to obtain a high frequency device substrate with excellent high frequency characteristics such as 2HD.
  • FIG. 1 is a schematic explanatory diagram showing an example of a substrate for a high frequency device according to the present invention.
  • 1A to 1C are process diagrams illustrating an example of a method for producing a high frequency device substrate according to the present invention.
  • FIG. 1 is a schematic structural diagram showing an example of a composite in which a CPW electrode is formed on a substrate for a high frequency device.
  • FIG. 2 is a schematic plan view of a CPW electrode.
  • 1 is a graph showing measurement results of harmonic characteristics (2HD) of Examples 1-3 and Comparative Examples 1-3.
  • the present invention relates to a substrate for a high frequency device having an SOI structure, and in particular to a substrate for a high frequency device having a support substrate (base substrate) that resists the formation of an inversion layer in a region close to the oxide film (i.e., buried oxide film: BOX film) of the SOI structure.
  • a support substrate base substrate
  • BOX film buried oxide film
  • Semiconductor substrates with high resistivity are prone to the formation of highly conductive charge inversion and charge accumulation layers at the interface between the BOX film and the supporting substrate, which reduces the effective resistivity of the substrate, causes parasitic power losses, and introduces device nonlinearity when the device is operated at RF frequencies.
  • one method for forming a semiconductor-on-insulator e.g., silicon-on-insulator, or SOI
  • a charge trapping layer for RF device applications is based on depositing an undoped polycrystalline silicon film on a highly resistive silicon substrate and forming a stack of an oxide layer and a silicon layer on top of it.
  • the polycrystalline silicon layer acts as a defect-rich layer between the silicon substrate and the buried oxide layer.
  • Raskin “New substrate passivation method dedicated to high resistivity SOI wafer fabrication with increased substrate resistivity,” IEEE Electron Device Letters, vol. 26, no. 11, pp. 805-807, 2005 ⁇ D. Lederer, B. Aspar, C. Laghae and J. - P. Raskin, “Performance of RF passive structures and SOI MOSFETs transferred on a passivated HR SOI substrate,” IEEE International SOI Conference, pp. 2171-2175, 2002. 29-30, 2006 ⁇ Daniel C. Kerrett al. "Identification of RF harmonic distortion on Si substrates and its reduction using a trap-rich layer", Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008 (IEEE Topical Meeting), pp. 151-154, 2008
  • FIG. 1 shows an example of a high frequency device substrate of the present invention.
  • the high frequency device substrate 1 of the present invention has an SOI substrate 2 and a nitride semiconductor film 3 on the SOI substrate 2.
  • the SOI substrate 2 has a structure in which a trap rich layer 5 (TR layer), an oxide film 6 (buried oxide film (BOX film)), and an SOI layer 7 (silicon single crystal layer) are laminated in this order on a base substrate 4.
  • TR layer trap rich layer 5
  • BOX film buried oxide film
  • SOI layer 7 silicon single crystal layer
  • the SOI substrate 2 is a TRSOI substrate in which a TR layer 5 formed on a base substrate 4 and an SOI layer 7 are bonded via an oxide film 6.
  • the structure of the TRSOI substrate can be obtained by bonding a structure consisting of the base substrate 4 and the TR layer 5 to a bond substrate which will become the SOI layer 7 and has an oxide film 6 formed on one or both surfaces thereof, and thinning the bond substrate.
  • the base substrate 4 may be, for example, a silicon substrate, and in particular, a silicon single crystal substrate having a crystal plane orientation of (100) produced by the CZ method, because it is easy to prepare a high-quality substrate at low cost.
  • the resistivity of the base substrate 4 is not particularly limited, and a low resistivity base substrate with a large breaking load may be used to easily control warpage. Increasing the dopant concentration increases the strength of the base substrate, and warpage can be suppressed.
  • a substrate with a high resistivity for example, 1 k ⁇ cm or more, can be used, in which case a substrate for a high frequency device with better high frequency characteristics can be obtained.
  • It can be preferably 3 k ⁇ cm or more, more preferably 5 k ⁇ cm or more, and can be more advantageous in terms of high frequency characteristics.
  • the upper limit of this resistivity is not particularly limited, and the higher the value, the more the high frequency characteristics can be improved, but it can be, for example, 50 k ⁇ cm.
  • the TR layer 5 is a layer that has the effect of trapping electric charges due to defects in the layer, and any layer having this function may be used, for example, a non-doped polysilicon layer or a damaged layer formed on the surface of the base substrate by ion implantation.
  • the oxide film 6 may be, for example, a silicon oxide film formed by thermal oxidation.
  • the SOI layer 7 has a resistivity of 1 k ⁇ cm or more, a crystal plane orientation of (111), and an oxygen concentration of 14.8 ppma or less.
  • the high resistivity of 1 k ⁇ cm or more improves the high frequency characteristics of the high frequency device substrate 1. It can be preferably 3 k ⁇ cm or more, and more preferably 5 k ⁇ cm or more, which is more advantageous in terms of high frequency characteristics. There is no particular upper limit to this resistivity, and the higher the value, the more the high frequency characteristics can be improved, but it can be set to, for example, 150 k ⁇ cm.
  • the crystal plane orientation is (111)
  • a good nitride semiconductor film can be suitably formed on the SOI layer 7 .
  • the present inventors have found that high frequency characteristics depend on the oxygen concentration in the SOI layer 7, and that if the oxygen concentration is 14.8 ppma or less, high frequency characteristics superior to those of conventional products can be obtained.
  • the conventional product had a limit of improvement at about -91 dBm, but with the present invention, it is possible to improve it even further, for example, by reducing it to about -95 dBm.
  • the oxygen concentration is 5.2 ppma or less, it can be improved to about -105 dBm, for example, and if it is 0.5 ppma or less, it can be improved to about -115 dBm or more.
  • the oxygen concentration values in the present invention are based on the JEIDA-61-2000 standard.
  • the nitride semiconductor film 3 is not particularly limited, and any nitride semiconductor can be used depending on the purpose, such as GaN, AlN, AlGaN, or a combination thereof.
  • the high-frequency device substrate 1 of the present invention as described above has superior high-frequency characteristics to conventional products.
  • FIG. 2 shows an example of the flow of the manufacturing method of the present invention. It includes a process for preparing a TRSOI substrate and a process for forming a nitride semiconductor film.
  • a base substrate is prepared, and a TR layer is formed thereon.
  • a base substrate Si substrate
  • a base substrate Si substrate with a diameter of 150 mm and high resistivity (1 to 50 k ⁇ cm) is prepared.
  • a silicon single crystal ingot with a crystal axis orientation of ⁇ 100> is grown by the Czochralski method, and then sliced by a wire saw device to prepare a silicon single crystal substrate with a crystal plane orientation of (100) (base substrate: (100) just substrate).
  • base substrate will be described here using a (100) just substrate as an example, it may also have an off-angle.
  • a poly-Si layer that will become a trap rich layer (TR layer) is grown on the base substrate thus prepared by low pressure CVD to a thickness of 100 nm to 3 ⁇ m.
  • the temperature in the reaction tube of the vapor phase growth apparatus is set to, for example, 590° C. or higher, and, for example, monosilane (SiH 4 ) gas and phosphine (PH 3 ) gas are introduced into the reaction tube, and the reaction tube can be grown while maintaining a predetermined degree of vacuum.
  • the TR layer is a layer that has the effect of trapping electric charges due to defects in the layer, and is not limited to polysilicon as long as it has this function.
  • it can be a damaged layer formed by ion implantation in a Si crystal.
  • the above-mentioned damaged layer can be formed on the surface of a base substrate.
  • a bond substrate made of single crystal silicon is prepared, and the base substrate and the bond substrate are bonded via an oxide film to obtain a bonded substrate.
  • the bond substrate in the bonded substrate is then thinned to form an SOI layer (manufacturing a TRSOI substrate).
  • a bond substrate is prepared, which can be, for example, a CZ single crystal substrate or an FZ single crystal substrate. Since this will later become an SOI layer and a nitride semiconductor film will be laminated on top of it, a substrate with a (111) crystal plane orientation is prepared.
  • the manufacturing conditions for the ingot in the CZ method or FZ method can be appropriately adjusted to grow an ingot with a ⁇ 111> crystal axis orientation, and then slice it (bond substrate: (111) just substrate).
  • the bond substrate may have an off-angle, but it is particularly preferable that the off-angle is within ⁇ 1 degree.
  • the nitride semiconductor film formed thereon can be more reliably uniform and of high quality.
  • the concentration of the dopant is appropriately adjusted to obtain a high resistivity (1 k ⁇ cm or more).
  • the oxygen concentration in the crystal is controlled to 14.8 ppma or less.
  • the oxygen concentration in the ingot can be adjusted by adjusting the rotation speed of the crucible in the CZ pulling device, and more preferably, it can be adjusted to 5.2 ppma or less.
  • the FZ method it is easy to prepare a low oxygen concentration of 0.5 ppma or less.
  • a 200 nm oxide film (to become a BOX film) is formed on the polysilicon layer formed on the base substrate, and is bonded (joined) to the above-mentioned (111) bond substrate (1 to 150 k ⁇ cm, preferably 3 k ⁇ cm or more, more preferably 5 k ⁇ cm or more) to become the SOI layer, and then the bond substrate is thinned to form the SOI layer.
  • the thickness of the SOI layer can be, for example, 100 nm.
  • the oxide film can be formed so that the thickness of the oxide film through the base single crystal substrate and the bond single crystal substrate is, for example, 2 nm to 470 nm.
  • the thickness of the oxide film after the two substrates are bonded can be 2 nm to 470 nm.
  • the oxide film may be formed on the polysilicon layer side formed on the base substrate, or on the bond substrate side. It may also be formed on both.
  • the conditions (atmosphere, temperature, time, etc.) of the heat treatment (bonding heat treatment) are not particularly limited as long as the base substrate and the bond substrate can be bonded to each other.
  • the temperature of this bonding heat treatment can be, for example, 400° C. to 1200° C. in a nitrogen atmosphere for 1 to 12 hours.
  • the method for thinning the bond substrate can be, for example, an ion implantation delamination method.
  • An ion implantation layer is formed in advance on the bond substrate, and the bonded substrate may be delaminated at the ion implantation layer by delamination heat treatment or mechanically delaminated at the ion implantation layer after bonding.
  • a nitride semiconductor film is formed on the SOI layer.
  • an AlN initial layer is stacked on a TRSOI substrate, followed by an AlGaN layer, a GaN layer, an SLs layer (a superlattice layer of AlGaN/GaN or AlN/GaN), and a GaN layer on top of that, to a total thickness of 1.8 ⁇ m.
  • These layers can be formed by epitaxial growth using the MOCVD method. Thermal donors due to oxygen in the substrate are unlikely to be formed.
  • the epitaxial growth temperature is about 1200 to 1050°C, and a thermal history of at least 4 hours is added, so it is thought that thermal donors would not be formed, and the cooling is close to rapid cooling.
  • Example 1 The high frequency device substrate 1 (TRSOI substrate+nitride semiconductor film) shown in FIG. 1 was manufactured according to the flow shown in FIG.
  • Base substrate 4 CZSi single crystal substrate, (100) plane is the main surface, 8 k ⁇ cm TR layer 5: polysilicon layer, thickness 1.8 ⁇ m Oxide film 6 (BOX film): thickness 200 nm SOI layer 7 (bond substrate): CZSi single crystal, (111) plane as main surface, 5 k ⁇ cm, oxygen concentration 14.8 ppma, thickness 100 nm
  • Nitride semiconductor film 3 A buffer layer consisting of an AlN initial layer, an AlGaN layer, and a GaN/AlN SLs structure is laminated, and a GaN layer is laminated thereon, with a total thickness of 1.8 ⁇ m.
  • TR layer A polysilicon layer was formed as a trap rich layer (charge trapping layer) on a base substrate at 1050° C., and the surface was polished to a thickness of 1.8 ⁇ m.
  • Oxide film Formed by thermally oxidizing the bond substrate.
  • SOI layer Hydrogen was injected from the top surface of the bond substrate (the side bonded to the base substrate) to form a microbubble layer (ion-implanted layer) inside the bond substrate. The bond substrate having the microbubble layer was attached to the surface of the polysilicon layer of the base substrate that had been previously formed.
  • Nitride semiconductor The growth temperatures of each layer are as follows: initial layer AlN is 1050 to 1200°C, AlGaN layer is 1150 to 1050°C, SLs structure is 1100 to 1000°C, and GaN is 1000 to 900°C.
  • An RF electrode was formed on the above-mentioned high frequency device substrate, and the characteristics were evaluated. Specifically, a CPW (Co-Planar Waveguide) Al electrode (thickness 1 ⁇ m, length 2199 ⁇ m) was formed on the high frequency device substrate 1 by a photolithography process, and then heat treatment was performed. In this manner, a composite 20 shown in FIG. 3 (structural diagram) and FIG. 4 (plan view) was obtained.
  • the composite 20 included a high frequency device substrate 1 and a CPW electrode 10 formed on the surface of the nitride semiconductor film 3 thereof.
  • the CPW electrode 10 included a central electrode 11 having a length L (FIG. 4) of 2199 ⁇ m and a width of 15 ⁇ m, and a peripheral electrode 12. The thickness of the central electrode 11 and the peripheral electrode 12 was 1 ⁇ m.
  • the CPW electrode 10 was used to obtain the harmonic characteristics (2HD) as the RF characteristics of the high frequency device substrate 1 .
  • Example 2 A high frequency device substrate and a CPW electrode were fabricated in the same manner as in Example 1, except that the oxygen concentration in the SOI layer was 5.2 ppma, and the harmonic characteristics (2HD) were obtained. The result was -104.8 dBm.
  • Example 3 A high frequency device substrate and a CPW electrode were fabricated in the same manner as in Example 1, except that the oxygen concentration of the SOI layer was 0.3 ppma (the bond substrate was an FZSi single crystal), and the harmonic characteristics (2HD) were obtained. The result was -114.2 dBm.
  • Example 1 A high frequency device substrate and a CPW electrode were fabricated in the same manner as in Example 1, except that the resistivity of the base substrate was 5 k ⁇ cm and the oxygen concentration of the SOI layer was 17.1 ppma, and the harmonic characteristics (2HD) were obtained. The result was -89.9 dBm.
  • Comparative Example 2 A GaN on Si structure was manufactured. Specifically, a buffer layer such as an SLs structure was laminated as a nitride semiconductor film on a Si substrate (FZSi single crystal substrate, (111) plane was the main surface, 5 k ⁇ cm, oxygen concentration 0.5 ppma) in the same manner as in Example 1, and a GaN layer was laminated thereon. The total thickness was 1.8 ⁇ m.
  • this Comparative Example 2 has a nitride semiconductor film, it differs from each of the Examples of the present invention in that the nitride semiconductor film is formed on a Si substrate, not on a TRSOI substrate.
  • a CPW electrode was fabricated in the same manner as in Example 1, and the harmonic characteristics (2HD) were obtained. The result was -84 dBm.
  • the SOI layer was removed from the TRSOI substrate to manufacture a TR substrate with an oxide film.
  • the manufacturing method of the TRSOI substrate is specifically as follows: a polysilicon layer with a thickness of 1.8 ⁇ m was formed on a Si substrate ((100) surface is the main surface, 5 k ⁇ cm, oxygen concentration 13.1 ppma) of the base substrate; an oxide film with a thickness of 200 nm and a microbubble layer were formed on the Si substrate of the bond substrate; the oxide film side of the bond substrate was attached to the polysilicon layer surface of the base substrate, and then a heat treatment was performed; the bond substrate was split with the microbubble layer as the peeling interface to form an SOI layer; and the SOI layer was thinned by touch polishing to obtain a TRSOI substrate.
  • This Comparative Example 3 differs from each of the Examples, which are products of the present invention, in that it does not have the SOI layer 7 and the nitride semiconductor film, which are present in the products of the present invention.
  • Example 4 A high frequency device substrate and a CPW electrode were fabricated in the same manner as in Example 1, except that the oxygen concentration of the SOI layer was 0.5 ppma (the bond substrate was an FZSi single crystal), and the harmonic characteristics (2HD) were obtained. The result was -112.4 dBm.
  • Example 5 A high frequency device substrate and a CPW electrode were fabricated in the same manner as in Example 1, except that the resistivity of the SOI layer was 1 k ⁇ cm, and the harmonic characteristics (2HD) were obtained. The result was -94 dBm.
  • Example 4 A high frequency device substrate and a CPW electrode were fabricated in the same manner as in Example 1, except that the oxygen concentration in the SOI layer was 17.1 ppma, and the harmonic characteristics (2HD) were obtained. The result was -89.6 dBm.
  • a high-frequency device substrate having a nitride semiconductor film formed on an SOI substrate is a TRSOI substrate in which a trap rich layer formed on a base substrate and an SOI layer made of single crystal silicon are bonded via an oxide film, The SOI layer has a resistivity of 1 k ⁇ cm or more, a crystal plane orientation of (111), and an oxygen concentration of 14.8 ppma or less.
  • [4] The high frequency device substrate according to any one of [1] to [3] above, wherein the base substrate is a CZ silicon single crystal substrate having a (100) crystal plane orientation.
  • [5] The high frequency device substrate according to any one of [1] to [4] above, wherein the base substrate has a resistivity of 1 k ⁇ cm or more.
  • a method for manufacturing a high frequency device substrate having a nitride semiconductor film formed on an SOI substrate comprising: A step of preparing a TRSOI substrate as the SOI substrate, in which a trap rich layer formed on a base substrate and a bond substrate made of silicon single crystal are bonded to each other via an oxide film, and the bond substrate is thinned to form an SOI layer; forming the nitride semiconductor film on the SOI layer;
  • the method for manufacturing a high frequency device substrate uses, as the bond substrate, a substrate having a resistivity of 1 k ⁇ cm or more, a crystal plane orientation of (111), and an oxygen concentration of 14.8 ppma or less.
  • the present invention is not limited to the above-described embodiments.
  • the above-described embodiments are merely examples, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and provides similar effects is included within the technical scope of the present invention.

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