JP2023511338A - 集積半導体ウェーハ装置のための設置方法及び設置装置 - Google Patents
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Abstract
Description
-ガラスサブストレートに、位置決めすべき半導体ウェーハの輪郭スペースに係合する緩和したばね要素を備え、
-ばねマニピュレータサブストレートに、位置決めすべき半導体ウェーハの及び/又は少なくとも1つのばね要素の輪郭スペースに適合する操作要素(マニピュレーション要素)を備え、
-ガラスサブストレートをばねマニピュレータサブストレートに対して移動させ、それによりばね要素に半導体ウェーハの輪郭スペースの外側にプレストレスを与え、ばね要素を偏向させるように、その操作要素を凹所に進入させ、
-半導体ウェーハを凹所内に配置し、及び
-ガラスサブストレートをばねマニピュレータサブストレートに対して移動させて戻し、それによりばね要素を解放するように、その操作要素を半導体ウェーハの輪郭スペースの外側に移動させ、その結果、少なくとも1つのばね要素が半導体ウェーハに作用し、凹所においてその位置を保持し及び/又はそれを整列させる。
2 凹所
3 壁
9 半導体ウェーハ
19 ばね要素
22 ばねマニピュレータサブストレート
25 操作要素
K 輪郭スペース
Claims (11)
- 集積半導体ウェーハ装置、特に製造時中間生産物としての集積半導体コンポーネント装置のための設置方法であって、
-壁(3)により形成される少なくとも1つの凹所(2)を有するガラスサブストレート(1)、
-前記凹所(2)に配置されるべき1又は複数の半導体ウェーハ、特に半導体コンポーネント(9)、及び
-前記凹所(2)に係合し、1又は複数の半導体ウェーハ(9)の前記凹所(2)における位置保持及び/又は整列のために前記ガラスサブストレート(1)に形成された少なくとも1つのばね要素(19)、を有する方法において、
以下の方法ステップ:
-前記ガラスサブストレート(1)に、位置決めすべき前記半導体ウェーハ(9)の輪郭スペース(K)に係合する緩和したばね要素(19)を備え、
-ばねマニピュレータサブストレート(22)に、位置決めすべき前記半導体ウェーハ(9)の及び/又は前記少なくとも1つのばね要素(19)の前記輪郭スペース(K)に適合する操作要素(25)を備え、
-前記ガラスサブストレート(1)を前記ばねマニピュレータサブストレート(22)に対して移動させ、それにより前記ばね要素(19)に前記半導体ウェーハ(9)の前記輪郭スペース(K)の外側にプレストレスを与え、前記ばね要素(19)を偏向させるように、その操作要素(25)を前記凹所(2)に進入させ、
-前記半導体ウェーハ(9)を前記凹所(2)内に配置し、及び
-前記ガラスサブストレート(1)を前記ばねマニピュレータサブストレート(22)に対して移動させて戻し、それにより前記ばね要素(19)を解放するように、その操作要素(25)を前記半導体ウェーハ(9)の前記輪郭スペース(K)の外側に移動させ、その結果、前記少なくとも1つのばね要素(19)が前記半導体ウェーハ(9)に作用し、前記凹所(2)においてその位置を保持し及び/又はそれを整列させる、
を特徴とする方法。 - 前記操作要素(21)が、前記ガラスサブストレート(1)の厚さ(D)の半分より少ない最大進入深さ(t)まで前記凹所(2)に進入する、ことを特徴とする請求項1に記載の設置方法。
- 前記操作要素(25)が、下から前記ガラスサブストレート(1)の前記凹所(2)に進入する、ことを特徴とする請求項1又は2に記載の設置方法。
- 前記ばね要素(19)のための、台形断面を有する及び側面の操作フランク(26)を有する突起が、操作要素(25)として使用される、ことを特徴とする請求項1~3のいずれか一項に記載の設置方法。
- 前記凹所(2)における前記半導体ウェーハ(9)は、上げられた中間位置において前記操作要素(25)上に位置し、前記操作要素(25)が前記凹所(2)から外側に移動されると、前記凹所(2)におけるその最終位置に下げられる、ことを特徴とする請求項1~4のいずれか一項に記載の設置方法。
- 前記操作要素(25)上に位置する前記半導体ウェーハ(9)は、負圧の適用によって前記中間位置において前記操作要素(25)上に固定される、ことを特徴とする請求項5に記載の設置方法。
- ガラスサブストレート(1)とばねマニピュレータサブストレート(22)の間の相対移動が、これら2つのコンポーネント間での負圧の適用(p)によって実現される、ことを特徴とする請求項1~6のいずれか一項に記載の設置方法。
- 請求項1~7のいずれか一項に記載の設置方法を実施する設置装置であって、
前記ガラスサブストレート(1)に対してその厚さ方向(DR)に移動可能なばねマニピュレータサブストレート(22)を有し、
前記ばねマニピュレータサブストレート(22)は、位置決めすべき前記半導体ウェーハ(9)の及び/又は前記少なくとも1つのばね要素(19)の前記輪郭スペース(K)に適合する少なくとも1つの操作要素(25)を備えている、ことを特徴とする設置装置。 - 前記ばねマニピュレータサブストレート(22)は、そこに配置された前記少なくとも1つの操作要素(25)を有する板状基体(23)から形成されている、ことを特徴とする請求項8に記載の設置装置。
- 前記操作要素(25)は、前記ばね要素(19)のための、台形断面を有する及び側面の操作フランク(26)を有する突起として設計されている、ことを特徴とする請求項8又は9に記載の設置装置。
- 前記厚さ方向(DR)に連続する吸引流路(27,28)が、前記ばねマニピュレータサブストレート(22)に、特に前記板状基体(23)及び/又は前記操作要素(25)に形成されている、ことを特徴とする請求項8~10のいずれか一項に記載の設置装置。
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DE102020200817.5A DE102020200817B3 (de) | 2020-01-23 | 2020-01-23 | Montageverfahren für eine integrierte Halbleiter-Waver-Vorrichtung und dafür verwendbare Montagevorrichtung |
DE102020200817.5 | 2020-01-23 | ||
PCT/EP2021/050495 WO2021148281A1 (de) | 2020-01-23 | 2021-01-12 | Montageverfahren für eine integrierte halbleiter-wafer-vorrichtung sowie montagevorrichtung |
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CN (1) | CN115004346A (ja) |
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DE102022130976B3 (de) | 2022-11-23 | 2023-11-30 | Lpkf Laser & Electronics Aktiengesellschaft | Monolithische Membran aus Glas, Doppel-Vertikalmembran-Anordnung, mikromechanische Federstruktur und zugehöriges Herstellungsverfahren |
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JPH0680602B2 (ja) * | 1987-11-28 | 1994-10-12 | 株式会社村田製作所 | 電子部品チップ保持治具および電子部品チップ取扱い方法 |
US5889332A (en) * | 1997-02-21 | 1999-03-30 | Hewlett-Packard Company | Area matched package |
JPH10284878A (ja) * | 1997-04-09 | 1998-10-23 | Fukuoka Toshiba Electron Kk | 半導体部品用搬送キャリアおよびそれを用いた半導体装置の製造方法 |
US6891276B1 (en) | 2002-01-09 | 2005-05-10 | Bridge Semiconductor Corporation | Semiconductor package device |
US6846380B2 (en) * | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
JP4405246B2 (ja) * | 2003-11-27 | 2010-01-27 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体チップの製造方法 |
CN101019473A (zh) * | 2004-05-20 | 2007-08-15 | 纳米纳克斯公司 | 具有快速制作周期的高密度互连系统 |
US7258703B2 (en) * | 2005-01-07 | 2007-08-21 | Asm Assembly Automation Ltd. | Apparatus and method for aligning devices on carriers |
JP2006343182A (ja) * | 2005-06-08 | 2006-12-21 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
DE102006033175A1 (de) | 2006-07-18 | 2008-01-24 | Robert Bosch Gmbh | Elektronikanordnung |
US20080217761A1 (en) * | 2007-03-08 | 2008-09-11 | Advanced Chip Engineering Technology Inc. | Structure of semiconductor device package and method of the same |
DE102007022959B4 (de) | 2007-05-16 | 2012-04-19 | Infineon Technologies Ag | Verfahren zur Herstellung von Halbleitervorrichtungen |
CN101765784B (zh) * | 2008-02-15 | 2013-06-26 | 综合测试电子系统有限公司 | 用于将多个分离成单件的半导体器件保持并定向在接线端支架的容纳凹部中的装置和方法 |
MY152434A (en) * | 2009-08-18 | 2014-09-30 | Multitest Elektronische Syst | System for post-processing of electronic components |
US9209156B2 (en) | 2012-09-28 | 2015-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional integrated circuits stacking approach |
EP2765431B1 (en) * | 2013-02-11 | 2016-05-25 | Rasco GmbH | Carrier for electronic components |
US9425121B2 (en) | 2013-09-11 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated fan-out structure with guiding trenches in buffer layer |
EP2884293A1 (en) * | 2013-12-12 | 2015-06-17 | Rasco GmbH | Semiconductor device carrier |
US9601463B2 (en) | 2014-04-17 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out stacked system in package (SIP) and the methods of making the same |
US9881908B2 (en) | 2016-01-15 | 2018-01-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated fan-out package on package structure and methods of forming same |
MY197514A (en) * | 2017-11-10 | 2023-06-19 | Lpkf Laser & Electronics Ag | Method and device for the integration of semiconductor wafers |
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CN115004346A (zh) | 2022-09-02 |
EP4094285A1 (de) | 2022-11-30 |
US20230096742A1 (en) | 2023-03-30 |
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