JP2023052183A5 - - Google Patents
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- JP2023052183A5 JP2023052183A5 JP2023000076A JP2023000076A JP2023052183A5 JP 2023052183 A5 JP2023052183 A5 JP 2023052183A5 JP 2023000076 A JP2023000076 A JP 2023000076A JP 2023000076 A JP2023000076 A JP 2023000076A JP 2023052183 A5 JP2023052183 A5 JP 2023052183A5
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- JP
- Japan
- Prior art keywords
- group
- substrate
- formula
- monovalent
- represented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 22
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 claims 6
- 125000006729 (C2-C5) alkenyl group Chemical group 0.000 claims 6
- 239000003607 modifier Substances 0.000 claims 6
- 239000003795 chemical substances by application Substances 0.000 claims 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical group O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims 4
- KHBQMWCZKVMBLN-UHFFFAOYSA-N Benzenesulfonamide Chemical group NS(=O)(=O)C1=CC=CC=C1 KHBQMWCZKVMBLN-UHFFFAOYSA-N 0.000 claims 4
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 claims 4
- 125000005036 alkoxyphenyl group Chemical group 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 4
- 125000005843 halogen group Chemical group 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- -1 p-toluenesulfonyl group Chemical group 0.000 claims 4
- 125000003944 tolyl group Chemical group 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000012986 modification Methods 0.000 claims 3
- 230000004048 modification Effects 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 2
- 125000003342 alkenyl group Chemical group 0.000 claims 2
- 125000005370 alkoxysilyl group Chemical group 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 150000003950 cyclic amides Chemical class 0.000 claims 2
- 125000004122 cyclic group Chemical group 0.000 claims 2
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 claims 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical group C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 claims 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 claims 2
- 125000000962 organic group Chemical group 0.000 claims 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims 2
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 claims 2
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 125000002088 tosyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])[H])S(*)(=O)=O 0.000 claims 2
- 229910004541 SiN Inorganic materials 0.000 claims 1
- 229910008484 TiSi Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024138750A JP2024161537A (ja) | 2018-04-13 | 2024-08-20 | 半導体基板用プライマーおよびパターン形成方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018077668 | 2018-04-13 | ||
| JP2018077668 | 2018-04-13 | ||
| JP2020513401A JPWO2019198700A1 (ja) | 2018-04-13 | 2019-04-09 | 半導体基板用プライマーおよびパターン形成方法 |
| PCT/JP2019/015411 WO2019198700A1 (ja) | 2018-04-13 | 2019-04-09 | 半導体基板用プライマーおよびパターン形成方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020513401A Division JPWO2019198700A1 (ja) | 2018-04-13 | 2019-04-09 | 半導体基板用プライマーおよびパターン形成方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024138750A Division JP2024161537A (ja) | 2018-04-13 | 2024-08-20 | 半導体基板用プライマーおよびパターン形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023052183A JP2023052183A (ja) | 2023-04-11 |
| JP2023052183A5 true JP2023052183A5 (https=) | 2024-01-18 |
| JP7544158B2 JP7544158B2 (ja) | 2024-09-03 |
Family
ID=68164170
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020513401A Pending JPWO2019198700A1 (ja) | 2018-04-13 | 2019-04-09 | 半導体基板用プライマーおよびパターン形成方法 |
| JP2023000076A Active JP7544158B2 (ja) | 2018-04-13 | 2023-01-04 | 半導体基板用プライマーおよびパターン形成方法 |
| JP2024138750A Pending JP2024161537A (ja) | 2018-04-13 | 2024-08-20 | 半導体基板用プライマーおよびパターン形成方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020513401A Pending JPWO2019198700A1 (ja) | 2018-04-13 | 2019-04-09 | 半導体基板用プライマーおよびパターン形成方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024138750A Pending JP2024161537A (ja) | 2018-04-13 | 2024-08-20 | 半導体基板用プライマーおよびパターン形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20210124266A1 (https=) |
| JP (3) | JPWO2019198700A1 (https=) |
| KR (2) | KR102792339B1 (https=) |
| CN (2) | CN112041746A (https=) |
| TW (1) | TWI865446B (https=) |
| WO (1) | WO2019198700A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4296272A4 (en) * | 2021-02-22 | 2024-12-04 | Nissan Chemical Corporation | THIN FILM SUBSTRATE, AND SEMICONDUCTOR SUBSTRATE |
| EP4644398A1 (en) * | 2023-02-13 | 2025-11-05 | Daikin Industries, Ltd. | Surface treatment agent |
| JP7830373B2 (ja) * | 2023-03-01 | 2026-03-16 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 |
| WO2025121364A1 (ja) * | 2023-12-08 | 2025-06-12 | 日産化学株式会社 | 積層体の製造方法、及び半導体素子の製造方法 |
| WO2025142834A1 (ja) * | 2023-12-25 | 2025-07-03 | 日産化学株式会社 | 積層体の製造方法、及び半導体素子の製造方法 |
| WO2025154662A1 (ja) * | 2024-01-18 | 2025-07-24 | 日産化学株式会社 | シリコン含有下層膜形成用組成物 |
| TW202603503A (zh) * | 2024-03-27 | 2026-01-16 | 日商日產化學股份有限公司 | 積層體之製造方法、及半導體元件之製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050214674A1 (en) | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| KR101436336B1 (ko) * | 2005-12-06 | 2014-09-01 | 닛산 가가쿠 고교 가부시키 가이샤 | 광가교 경화의 레지스트 하층막을 형성하기 위한 규소 함유레지스트 하층막 형성 조성물 |
| US7759253B2 (en) * | 2006-08-07 | 2010-07-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and material for forming a double exposure lithography pattern |
| FI123292B (fi) * | 2011-06-14 | 2013-01-31 | Silecs Oy | Silaanimonomeerit ja niistä saatavat korkean taitekertoimen omaavat polymeerit |
| TWI618985B (zh) * | 2011-08-10 | 2018-03-21 | 日產化學工業股份有限公司 | 具有碸構造之含矽阻劑底層膜形成組成物 |
| JP6163770B2 (ja) * | 2012-03-07 | 2017-07-19 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
| KR102044968B1 (ko) * | 2012-04-23 | 2019-12-05 | 닛산 가가쿠 가부시키가이샤 | 첨가제를 포함하는 규소함유 euv레지스트 하층막 형성 조성물 |
| WO2014058061A1 (ja) * | 2012-10-11 | 2014-04-17 | 日産化学工業株式会社 | 光分解性材料、基板及びそのパターニング方法 |
| JP6196190B2 (ja) * | 2014-07-08 | 2017-09-13 | 信越化学工業株式会社 | 多層膜形成方法及びパターン形成方法 |
| JP6250514B2 (ja) * | 2014-10-03 | 2017-12-20 | 信越化学工業株式会社 | 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法 |
| US10838303B2 (en) * | 2015-01-30 | 2020-11-17 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition for lithography containing hydrolyzable silane having carbonate skeleton |
| JP6786783B2 (ja) * | 2015-09-30 | 2020-11-18 | Jsr株式会社 | 多層レジストプロセス用シリコン含有膜形成組成物及びパターン形成方法 |
-
2019
- 2019-04-09 WO PCT/JP2019/015411 patent/WO2019198700A1/ja not_active Ceased
- 2019-04-09 CN CN201980025380.5A patent/CN112041746A/zh active Pending
- 2019-04-09 KR KR1020207028143A patent/KR102792339B1/ko active Active
- 2019-04-09 US US17/043,821 patent/US20210124266A1/en not_active Abandoned
- 2019-04-09 KR KR1020257009995A patent/KR20250044951A/ko active Pending
- 2019-04-09 JP JP2020513401A patent/JPWO2019198700A1/ja active Pending
- 2019-04-09 CN CN202512046304.2A patent/CN121704130A/zh active Pending
- 2019-04-10 TW TW108112437A patent/TWI865446B/zh active
-
2023
- 2023-01-04 JP JP2023000076A patent/JP7544158B2/ja active Active
-
2024
- 2024-07-26 US US18/785,814 patent/US20240385521A1/en active Pending
- 2024-08-20 JP JP2024138750A patent/JP2024161537A/ja active Pending
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