CN112041746A - 半导体基板用底涂剂及图案形成方法 - Google Patents

半导体基板用底涂剂及图案形成方法 Download PDF

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Publication number
CN112041746A
CN112041746A CN201980025380.5A CN201980025380A CN112041746A CN 112041746 A CN112041746 A CN 112041746A CN 201980025380 A CN201980025380 A CN 201980025380A CN 112041746 A CN112041746 A CN 112041746A
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CN
China
Prior art keywords
group
substrate
acid
surface modifier
methyl
Prior art date
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Pending
Application number
CN201980025380.5A
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English (en)
Chinese (zh)
Inventor
志垣修平
武田谕
柴山亘
中岛诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
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Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to CN202512046304.2A priority Critical patent/CN121704130A/zh
Publication of CN112041746A publication Critical patent/CN112041746A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/28—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen sulfur-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Silicon Polymers (AREA)
CN201980025380.5A 2018-04-13 2019-04-09 半导体基板用底涂剂及图案形成方法 Pending CN112041746A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202512046304.2A CN121704130A (zh) 2018-04-13 2019-04-09 半导体基板用底涂剂及图案形成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-077668 2018-04-13
JP2018077668 2018-04-13
PCT/JP2019/015411 WO2019198700A1 (ja) 2018-04-13 2019-04-09 半導体基板用プライマーおよびパターン形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202512046304.2A Division CN121704130A (zh) 2018-04-13 2019-04-09 半导体基板用底涂剂及图案形成方法

Publications (1)

Publication Number Publication Date
CN112041746A true CN112041746A (zh) 2020-12-04

Family

ID=68164170

Family Applications (2)

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CN201980025380.5A Pending CN112041746A (zh) 2018-04-13 2019-04-09 半导体基板用底涂剂及图案形成方法
CN202512046304.2A Pending CN121704130A (zh) 2018-04-13 2019-04-09 半导体基板用底涂剂及图案形成方法

Family Applications After (1)

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Country Status (6)

Country Link
US (2) US20210124266A1 (https=)
JP (3) JPWO2019198700A1 (https=)
KR (2) KR102792339B1 (https=)
CN (2) CN112041746A (https=)
TW (1) TWI865446B (https=)
WO (1) WO2019198700A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4296272A4 (en) * 2021-02-22 2024-12-04 Nissan Chemical Corporation THIN FILM SUBSTRATE, AND SEMICONDUCTOR SUBSTRATE
EP4644398A1 (en) * 2023-02-13 2025-11-05 Daikin Industries, Ltd. Surface treatment agent
JP7830373B2 (ja) * 2023-03-01 2026-03-16 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法
WO2025121364A1 (ja) * 2023-12-08 2025-06-12 日産化学株式会社 積層体の製造方法、及び半導体素子の製造方法
WO2025142834A1 (ja) * 2023-12-25 2025-07-03 日産化学株式会社 積層体の製造方法、及び半導体素子の製造方法
WO2025154662A1 (ja) * 2024-01-18 2025-07-24 日産化学株式会社 シリコン含有下層膜形成用組成物
TW202603503A (zh) * 2024-03-27 2026-01-16 日商日產化學股份有限公司 積層體之製造方法、及半導體元件之製造方法

Citations (7)

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US20080032508A1 (en) * 2006-08-07 2008-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method and Material For Forming A Double Exposure Lithography Pattern
US20140288260A1 (en) * 2011-06-14 2014-09-25 Silecs Oy Organometallic Monomers and high Refractive index Polymers derived therefrom
CN104246614A (zh) * 2012-04-23 2014-12-24 日产化学工业株式会社 含有添加剂的含硅极紫外抗蚀剂下层膜形成用组合物
US20160008844A1 (en) * 2014-07-08 2016-01-14 Shin-Etsu Chemical Co., Ltd. Process for forming multi-layer film and patterning process
US20160096978A1 (en) * 2014-10-03 2016-04-07 Shin-Etsu Chemical Co., Ltd. Composition for forming a coating type bpsg film, substrate, and patterning process
JP2017068049A (ja) * 2015-09-30 2017-04-06 Jsr株式会社 多層レジストプロセス用シリコン含有膜形成組成物及びパターン形成方法
CN107209460A (zh) * 2015-01-30 2017-09-26 日产化学工业株式会社 包含具有碳酸酯骨架的水解性硅烷的光刻用抗蚀剂下层膜形成用组合物

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US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
KR101436336B1 (ko) * 2005-12-06 2014-09-01 닛산 가가쿠 고교 가부시키 가이샤 광가교 경화의 레지스트 하층막을 형성하기 위한 규소 함유레지스트 하층막 형성 조성물
TWI618985B (zh) * 2011-08-10 2018-03-21 日產化學工業股份有限公司 具有碸構造之含矽阻劑底層膜形成組成物
JP6163770B2 (ja) * 2012-03-07 2017-07-19 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
WO2014058061A1 (ja) * 2012-10-11 2014-04-17 日産化学工業株式会社 光分解性材料、基板及びそのパターニング方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080032508A1 (en) * 2006-08-07 2008-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method and Material For Forming A Double Exposure Lithography Pattern
US20140288260A1 (en) * 2011-06-14 2014-09-25 Silecs Oy Organometallic Monomers and high Refractive index Polymers derived therefrom
CN104246614A (zh) * 2012-04-23 2014-12-24 日产化学工业株式会社 含有添加剂的含硅极紫外抗蚀剂下层膜形成用组合物
US20160008844A1 (en) * 2014-07-08 2016-01-14 Shin-Etsu Chemical Co., Ltd. Process for forming multi-layer film and patterning process
US20160096978A1 (en) * 2014-10-03 2016-04-07 Shin-Etsu Chemical Co., Ltd. Composition for forming a coating type bpsg film, substrate, and patterning process
CN107209460A (zh) * 2015-01-30 2017-09-26 日产化学工业株式会社 包含具有碳酸酯骨架的水解性硅烷的光刻用抗蚀剂下层膜形成用组合物
JP2017068049A (ja) * 2015-09-30 2017-04-06 Jsr株式会社 多層レジストプロセス用シリコン含有膜形成組成物及びパターン形成方法

Also Published As

Publication number Publication date
JP2024161537A (ja) 2024-11-19
KR102792339B1 (ko) 2025-04-08
JP7544158B2 (ja) 2024-09-03
TWI865446B (zh) 2024-12-11
JP2023052183A (ja) 2023-04-11
WO2019198700A1 (ja) 2019-10-17
US20210124266A1 (en) 2021-04-29
CN121704130A (zh) 2026-03-20
KR20250044951A (ko) 2025-04-01
KR20200143675A (ko) 2020-12-24
JPWO2019198700A1 (ja) 2021-04-30
TW202004348A (zh) 2020-01-16
US20240385521A1 (en) 2024-11-21

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