KR102792339B1 - 반도체기판용 프라이머 및 패턴형성방법 - Google Patents

반도체기판용 프라이머 및 패턴형성방법 Download PDF

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Publication number
KR102792339B1
KR102792339B1 KR1020207028143A KR20207028143A KR102792339B1 KR 102792339 B1 KR102792339 B1 KR 102792339B1 KR 1020207028143 A KR1020207028143 A KR 1020207028143A KR 20207028143 A KR20207028143 A KR 20207028143A KR 102792339 B1 KR102792339 B1 KR 102792339B1
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South Korea
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group
substrate
surface modifier
acid
resist pattern
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KR1020207028143A
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Korean (ko)
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KR20200143675A (ko
Inventor
슈헤이 시가키
사토시 타케다
와타루 시바야마
마코토 나카지마
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닛산 가가쿠 가부시키가이샤
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Publication of KR20200143675A publication Critical patent/KR20200143675A/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/28—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen sulfur-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Silicon Polymers (AREA)
KR1020207028143A 2018-04-13 2019-04-09 반도체기판용 프라이머 및 패턴형성방법 Active KR102792339B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257009995A KR20250044951A (ko) 2018-04-13 2019-04-09 반도체기판용 프라이머 및 패턴형성방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-077668 2018-04-13
JP2018077668 2018-04-13
PCT/JP2019/015411 WO2019198700A1 (ja) 2018-04-13 2019-04-09 半導体基板用プライマーおよびパターン形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257009995A Division KR20250044951A (ko) 2018-04-13 2019-04-09 반도체기판용 프라이머 및 패턴형성방법

Publications (2)

Publication Number Publication Date
KR20200143675A KR20200143675A (ko) 2020-12-24
KR102792339B1 true KR102792339B1 (ko) 2025-04-08

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KR1020207028143A Active KR102792339B1 (ko) 2018-04-13 2019-04-09 반도체기판용 프라이머 및 패턴형성방법
KR1020257009995A Pending KR20250044951A (ko) 2018-04-13 2019-04-09 반도체기판용 프라이머 및 패턴형성방법

Family Applications After (1)

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Country Status (6)

Country Link
US (2) US20210124266A1 (https=)
JP (3) JPWO2019198700A1 (https=)
KR (2) KR102792339B1 (https=)
CN (2) CN112041746A (https=)
TW (1) TWI865446B (https=)
WO (1) WO2019198700A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4296272A4 (en) * 2021-02-22 2024-12-04 Nissan Chemical Corporation THIN FILM SUBSTRATE, AND SEMICONDUCTOR SUBSTRATE
EP4644398A1 (en) * 2023-02-13 2025-11-05 Daikin Industries, Ltd. Surface treatment agent
JP7830373B2 (ja) * 2023-03-01 2026-03-16 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法
WO2025121364A1 (ja) * 2023-12-08 2025-06-12 日産化学株式会社 積層体の製造方法、及び半導体素子の製造方法
WO2025142834A1 (ja) * 2023-12-25 2025-07-03 日産化学株式会社 積層体の製造方法、及び半導体素子の製造方法
WO2025154662A1 (ja) * 2024-01-18 2025-07-24 日産化学株式会社 シリコン含有下層膜形成用組成物
TW202603503A (zh) * 2024-03-27 2026-01-16 日商日產化學股份有限公司 積層體之製造方法、及半導體元件之製造方法

Citations (2)

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US20090162782A1 (en) 2005-12-06 2009-06-25 Nissan Chemical Industries, Ltd. Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating
JP2016018051A (ja) * 2014-07-08 2016-02-01 信越化学工業株式会社 多層膜形成方法及びパターン形成方法

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US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7759253B2 (en) * 2006-08-07 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and material for forming a double exposure lithography pattern
FI123292B (fi) * 2011-06-14 2013-01-31 Silecs Oy Silaanimonomeerit ja niistä saatavat korkean taitekertoimen omaavat polymeerit
TWI618985B (zh) * 2011-08-10 2018-03-21 日產化學工業股份有限公司 具有碸構造之含矽阻劑底層膜形成組成物
JP6163770B2 (ja) * 2012-03-07 2017-07-19 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
KR102044968B1 (ko) * 2012-04-23 2019-12-05 닛산 가가쿠 가부시키가이샤 첨가제를 포함하는 규소함유 euv레지스트 하층막 형성 조성물
WO2014058061A1 (ja) * 2012-10-11 2014-04-17 日産化学工業株式会社 光分解性材料、基板及びそのパターニング方法
JP6250514B2 (ja) * 2014-10-03 2017-12-20 信越化学工業株式会社 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法
US10838303B2 (en) * 2015-01-30 2020-11-17 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition for lithography containing hydrolyzable silane having carbonate skeleton
JP6786783B2 (ja) * 2015-09-30 2020-11-18 Jsr株式会社 多層レジストプロセス用シリコン含有膜形成組成物及びパターン形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090162782A1 (en) 2005-12-06 2009-06-25 Nissan Chemical Industries, Ltd. Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating
JP2016018051A (ja) * 2014-07-08 2016-02-01 信越化学工業株式会社 多層膜形成方法及びパターン形成方法

Also Published As

Publication number Publication date
JP2024161537A (ja) 2024-11-19
JP7544158B2 (ja) 2024-09-03
TWI865446B (zh) 2024-12-11
JP2023052183A (ja) 2023-04-11
WO2019198700A1 (ja) 2019-10-17
US20210124266A1 (en) 2021-04-29
CN121704130A (zh) 2026-03-20
KR20250044951A (ko) 2025-04-01
KR20200143675A (ko) 2020-12-24
CN112041746A (zh) 2020-12-04
JPWO2019198700A1 (ja) 2021-04-30
TW202004348A (zh) 2020-01-16
US20240385521A1 (en) 2024-11-21

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