JPWO2023017728A5 - - Google Patents

Info

Publication number
JPWO2023017728A5
JPWO2023017728A5 JP2023541392A JP2023541392A JPWO2023017728A5 JP WO2023017728 A5 JPWO2023017728 A5 JP WO2023017728A5 JP 2023541392 A JP2023541392 A JP 2023541392A JP 2023541392 A JP2023541392 A JP 2023541392A JP WO2023017728 A5 JPWO2023017728 A5 JP WO2023017728A5
Authority
JP
Japan
Prior art keywords
forming
composition
underlayer film
resist underlayer
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023541392A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023017728A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/028778 external-priority patent/WO2023017728A1/ja
Publication of JPWO2023017728A1 publication Critical patent/JPWO2023017728A1/ja
Publication of JPWO2023017728A5 publication Critical patent/JPWO2023017728A5/ja
Pending legal-status Critical Current

Links

JP2023541392A 2021-08-10 2022-07-26 Pending JPWO2023017728A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021130632 2021-08-10
PCT/JP2022/028778 WO2023017728A1 (ja) 2021-08-10 2022-07-26 半導体基板の製造方法及びレジスト下層膜形成用組成物

Publications (2)

Publication Number Publication Date
JPWO2023017728A1 JPWO2023017728A1 (https=) 2023-02-16
JPWO2023017728A5 true JPWO2023017728A5 (https=) 2025-10-20

Family

ID=85200510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023541392A Pending JPWO2023017728A1 (https=) 2021-08-10 2022-07-26

Country Status (5)

Country Link
US (1) US20240255852A1 (https=)
JP (1) JPWO2023017728A1 (https=)
KR (1) KR20240041932A (https=)
TW (1) TWI911471B (https=)
WO (1) WO2023017728A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102819800B1 (ko) * 2022-09-28 2025-06-11 동우 화인켐 주식회사 하드마스크용 조성물

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100400243B1 (ko) * 1999-06-26 2003-10-01 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
KR20030068729A (ko) * 2002-02-16 2003-08-25 삼성전자주식회사 반사 방지용 광흡수막 형성 조성물 및 이를 이용한 반도체소자의 패턴 형성 방법
TWI258635B (en) * 2002-11-27 2006-07-21 Tokyo Ohka Kogyo Co Ltd Undercoating material for wiring, embedded material, and wiring formation method
JP3914491B2 (ja) * 2002-11-27 2007-05-16 東京応化工業株式会社 デュアルダマシン構造形成用埋め込み材料およびこれを用いたデュアルダマシン構造形成方法
JP2007284535A (ja) * 2006-04-14 2007-11-01 Daicel Chem Ind Ltd 重合体及びそれを用いた反射防止膜形成組成物
WO2013141015A1 (ja) 2012-03-23 2013-09-26 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト下層膜形成組成物
JP6134603B2 (ja) * 2013-08-02 2017-05-24 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法

Similar Documents

Publication Publication Date Title
TWI564659B (zh) Ｉ－ｌｉｎｅ光阻成分及使用其形成精細圖案的方法
JP5708938B2 (ja) 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
JPH1152562A (ja) フォトレジスト組成物
TWI598694B (zh) 用於形成光阻下層膜之化合物及組成物，以及使用該化合物及組成物形成光阻下層膜之方法
JP2023052183A5 (https=)
JPWO2023068075A5 (https=)
JPWO2023021971A5 (https=)
JP2015081248A5 (https=)
TW201332981A (zh) 三聚氰酸衍生物、包括該等三聚氰酸衍生物之光阻底層組成物以及使用該光阻底層組成物形成圖案的方法
WO2019208354A1 (ja) Ｅｕｖリソグラフィ用ポジ型レジスト組成物およびレジストパターン形成方法
JPWO2023017728A5 (https=)
TWI259332B (en) Negative-type photosensitive resin composition containing epoxy compound
TWI305870B (en) Radiation-sensitive polymer composition and pattern forming method using the same
TWI358610B (en) Photo-sensitive compound and photoresist compositi
JP2009157080A5 (https=)
JPWO2025004904A5 (https=)
JP2007043055A (ja) 薄膜トランジスタ及びゲート絶縁膜
JPWO2025004621A5 (https=)
JPWO2024070713A5 (https=)
JP5423367B2 (ja) 酸転写用組成物、酸転写用膜及びパターン形成方法
JP2024072786A (ja) 半導体フォトレジスト用組成物およびこれを用いたパターン形成方法
TWI271600B (en) Chemical amplification type positive resist composition
TW202407466A (zh) 可顯影光阻上層膜組成物、以及光阻上層膜圖案及光阻圖案之製造方法
JPWO2023176259A5 (https=)
JPWO2022259885A5 (https=)