JP2023051946A - 仮固定用積層体及び半導体装置の製造方法 - Google Patents
仮固定用積層体及び半導体装置の製造方法 Download PDFInfo
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Abstract
Description
本実施形態に係る半導体装置の製造方法は、支持部材と、光を吸収して熱を発生する仮固定材層(以下、単に「仮固定材層」という場合がある。)と、半導体部材とがこの順に積層された積層体を準備する準備工程と、積層体における仮固定材層にインコヒーレント光を照射して、支持部材から半導体部材を分離する分離工程とを備える。
図1は、本発明の半導体装置の製造方法の一実施形態を説明するための模式断面図であり、図1(a)及び(b)は、各工程を示す模式断面図である。図1(a)に示すとおり、積層体の準備工程においては、支持部材10と、仮固定材層20c又は30cと、半導体部材40とがこの順に積層された積層体100を準備する。
一実施形態として、仮固定材前駆体層は、光を吸収して熱を発生する導電性粒子を含む硬化性樹脂組成物を含有する。図2は、仮固定材前駆体層の一実施形態を示す模式断面図である。仮固定材前駆体層20は、図2に示すとおり、導電性粒子22と硬化性樹脂成分24とから構成され得る。すなわち、硬化性樹脂組成物は、導電性粒子及び硬化性樹脂成分を含有するものであってよい。硬化性樹脂成分24は、熱又は光によって硬化する硬化性樹脂成分であり得る。
他の実施形態として、仮固定材前駆体層は、光を吸収して熱を発生する光吸収層と硬化性樹脂成分を含む樹脂層とを有する。図5(a)、(b)、及び(c)は、仮固定材前駆体層の他の実施形態を示す模式断面図である。仮固定材前駆体層30としては、光吸収層32と樹脂層34とを有しているのであれば、その構成に特に制限されないが、例えば、光吸収層32と樹脂層34とを支持部材10側からこの順に有する構成(図5(a))、樹脂層34と光吸収層32とを支持部材10側からこの順に有する構成(図5(b))、光吸収層32と樹脂層34と光吸収層32とをこの順に有する構成(図5(c))等が挙げられる。これらのうち、仮固定材前駆体層30は、光吸収層32と樹脂層34とを支持部材10側からこの順に有する構成(図5(a))であってよい。以下では、主に図5(a)で示す構成の仮固定材前駆体層30を用いた態様について詳細に説明する。
図1(b)に示すとおり、半導体部材の分離工程においては、積層体100における仮固定材層20c又は30cにインコヒーレント光を照射して、支持部材10から半導体部材40を分離する。
上述の光を吸収して熱を発生する導電性粒子を含む硬化性樹脂組成物は、半導体部材を支持部材に仮固定するための仮固定材として好適に用いることができる。
上述の仮固定材用硬化性樹脂組成物を含むフィルムは、半導体部材を支持部材に仮固定するための仮固定材として好適に用いることができる。
上述の光吸収層と硬化性樹脂成分を含む樹脂層とを有する積層フィルムは、半導体部材を支持部材に仮固定するための仮固定材として好適に用いることができる。
(製造例1-1)
<仮固定材用硬化性樹脂組成物の調製>
熱可塑性樹脂として、水添スチレン・ブタジエンエラストマー(商品名:ダイナロン2324P、JSR株式会社、Tg:-50℃)80質量部、重合性モノマーとして、1,9-ノナンジオールジアクリレ-ト(商品名:FA-129AS、日立化成株式会社)20質量部、及び重合開始剤として、パーオキシエステル(商品名:パーヘキサ25O、日油株式会社)1質量部を混合した。なお、水添スチレン・ブタジエンエラストマーはトルエンで固形分40質量%に希釈して用いた。これに、導電性粒子A(銅粉、商品名:1300Y、三井金属鉱業株式会社、形状:粒状、平均粒径(D50):3.5μm、タップ密度:5.0g/cm3)50質量部を添加した。得られた混合物を、自動撹拌装置を用いて、2200回転/分で10分間撹拌することによって、溶剤としてトルエンを含む仮固定材用硬化性樹脂組成物のワニスを得た。
得られた仮固定材用硬化性樹脂組成物のワニスを、精密塗工機を用いて、ポリエチレンテレフタレート(PET)フィルム(ピューレックスA31、帝人デュポンフィルム株式会社、厚み:38μm)の離型処理面に塗工し、80℃で10分間溶剤を乾燥除去し、約100μmの製造例1-1の仮固定材用フィルムを作製した。
上記で作製した製造例1-1の仮固定材用フィルムを5mm×5mmで切り出した。支持部材として、スライドガラス(サイズ:15mm×20mm、厚み:1mm)及び半導体部材として、シリコンウェハ(サイズ:8mm×10mm、厚み:750μm)を用い、製造例1-1の仮固定材用フィルムをシリコンウェハとスライドガラスとの間に挟み込み、熱圧着機を用いて、90℃、5秒間、1MPaの条件で仮熱圧着を行った。その後、防爆乾燥機で150℃、1時間の条件で熱硬化させて仮固定材層を形成することによって、製造例1-1の積層体を作製した。
導電性粒子Aを導電性粒子B(銀粉、商品名:K0082P、Metalor社、形状:粒状、平均粒径(D50):1.5μm、タップ密度:5.0g/cm3)に変更した以外は、製造例1-1と同様にして、製造例1-2の仮固定材用フィルム及び積層体を作製した。
導電性粒子Aを導電性粒子C(銀粉、商品名:AgC-239、福田金属箔粉工業株式会社、形状:扁平状、平均粒径(D50):2.0~3.4μm、タップ密度:4.2~6.1g/cm3)に変更した以外は、製造例1-1と同様にして、製造例1-3の仮固定材用フィルム及び積層体を作製した。
導電性粒子Aを導電性粒子D(カーボン(炭素)粉、商品名:MA600、三菱ケミカル株式会社製、形状:粒状)に変更した以外は、製造例1-1と同様にして、製造例1-4の仮固定材用フィルム及び積層体を作製した。
導電性粒子Aを加えなかった以外は、製造例1-1と同様にして、製造例1-5の積層体を作製した。
<剥離性試験>
インコヒーレント光の光源として、キセノンランプを用いた。表1に示す照射条件で、製造例1-1~1-5の積層体をキセノンランプで照射し、支持部材からの剥離性を評価した。キセノンランプとして、Xenon社製のS2300(波長範囲:270nm~近赤外領域、単位面積あたりの照射エネルギー:17J/cm2)を用い、積層体の支持部材(スライドガラス)を介して仮固定材層を照射した。照射距離は、光源とスライドガラスを設置したステージとの距離である。剥離性試験の評価は、キセノンランプによる照射後、自然にシリコンウェハがスライドガラスから剥離したものを「A」と評価し、シリコンウェハとスライドガラスとの間にピンセットを差し込んだときに、シリコンウェハが破損することなく、分離できたものを「B」と評価し、分離できなかったものを「C」と評価した。結果を表1に示す。
製造例1-1~1-5の積層体を加熱し、加熱処理後の支持部材と半導体部材との接着性及び支持部材からの剥離性を耐熱性として評価した。加熱は、製造例1-1~1-5の積層体を260℃に加熱したホットプレートに1時間放置することで行った。加熱処理後の接着性は、シリコンウェハとスライドガラスとの間にピンセットを差し込んだときに、分離しなかったものを「A」と評価し、分離したものを「B」と評価した。加熱処理後のスライドガラスからの剥離性は、上記剥離性試験と同様に評価した。キセノンランプ照射は、上記剥離性試験と同様のキセノンランプを用い、印加電圧3000V、パルス幅5000μs、照射距離10mm、照射回数1回、及び照射時間5000μsで行った。結果を表2に示す。
(製造例2-1)
<硬化性樹脂成分の調製>
熱可塑性樹脂として、水添スチレン・ブタジエンエラストマー(商品名:ダイナロン2324P、JSR株式会社)80質量部、重合性モノマーとして、1,9-ノナンジオールジアクリレ-ト(商品名:FA-129AS、日立化成株式会社)20質量部、及び重合開始剤として、パーオキシエステル(商品名:パーヘキサ25O、日油株式会社)1質量部を混合した。なお、水添スチレン・ブタジエンエラストマーはトルエンで固形分40質量%に希釈して用いた。このようにして、溶剤としてトルエンを含む硬化性樹脂成分のワニスを調製した。
エポキシ樹脂(商品名:EPICLON EXA-4816、DIC株式会社)14質量部、硬化剤(商品名:キュアゾール1B2MZ、四国化成工業株式会社)1質量部、導電性粒子E(銀コート銅粉、商品名:Ag1400YP、三井金属鉱業株式会社、形状:扁平状)60質量部、及び有機溶剤(酢酸エチル)25質量部を混合して、硬化性樹脂組成物のワニスを調製した。
得られた硬化性樹脂成分のワニスを、精密塗工機を用いて、ポリエチレンテレフタレート(PET)フィルム(ピューレックスA31、帝人デュポンフィルム株式会社、厚み:38μm)の離型処理面に塗工し、80℃で10分間溶剤を乾燥除去し、約100μmの樹脂層を作製した。
上記で作製した製造例2-1の仮固定材用積層フィルムを5mm×5mmで切り出した。支持部材として、スライドガラス(サイズ:20mm×15mm、厚み:1mm)及び半導体部材として、シリコンウェハ(サイズ:8mm×10mm、厚み:750μm)を用い、製造例2-1の仮固定材用積層フィルムをシリコンウェハとスライドガラスとの間に、光吸収層がスライドガラスに接するように挟み込み(図5(a)に示す構成)、熱圧着機を用いて、90℃、5秒間、1MPaの条件で仮熱圧着を行った。その後、防爆乾燥機で150℃、1時間の条件で熱硬化させることによって、製造例2-1の積層体を作製した。
光吸収層を、2層の導電体層(第1の導電体層:チタン、第2の導電体層:銅)から構成される層に変更した以外は、製造例2-1と同様にして、製造例2-2の仮固定材用積層フィルム及び積層体を得た。なお、当該光吸収層は、逆スパッタリングによる前処理(Ar流速:1.2×10-2Pa・m3/s(70sccm)、RF電力:300W、時間:300秒間)後、表3に示す処理条件でRFスパッタリングを行い、チタン(第1の導電体層)/銅(第2の導電体層)の厚みを50nm/200nmとした。
光吸収層を設けなかった(すなわち、樹脂層のみとした)以外は、製造例2-1と同様にして、製造例2-3の積層体を作製した。
<剥離性試験>
インコヒーレント光の光源として、キセノンランプを用いた。表4に示す照射条件で、製造例2-1~2-3の積層体をキセノンランプで照射し、支持部材からの剥離性を評価した。キセノンランプとして、Xenon社製のS2300(波長範囲:270nm~近赤外領域、単位面積あたりの照射エネルギー:17J/cm2)を用い、積層体の支持部材(スライドガラス)を介して仮固定材層を照射した。照射距離は、光源とスライドガラスを設置したステージとの距離である。剥離性試験の評価は、キセノンランプによる照射後、自然にシリコンウェハがスライドガラスから剥離したものを「A」と評価し、シリコンウェハとスライドガラスとの間にピンセットを差し込んだときに、シリコンウェハが破損することなく、分離できたものを「B」と評価し、分離できなかったものを「C」と評価した。結果を表4に示す。
(製造例3-1)
<評価サンプルの作製>
上記で作製した実施例2-2の仮固定材用積層フィルムを5mm×5mmで切り出した。支持部材として、スライドガラス(サイズ:20mm×15mm、厚み:1mm)及び半導体部材として、シリコンウェハ(サイズ:8mm×10mm、厚み:750μm)を用い、実施例2-2の仮固定材用積層フィルムをシリコンウェハとスライドガラスとの間に、光吸収層がスライドガラスに接するように(図5(a)に示す構成になるように)挟み込み、熱圧着機を用いて、90℃、5秒間、1MPaの条件で仮熱圧着を行った。その後、防爆乾燥機で150℃、1時間の条件で熱硬化させることによって、製造例3-1の積層体を作製した。
実施例2-2の仮固定材用積層フィルムをシリコンウェハとスライドガラスとの間に、光吸収層がシリコンウェハに接するように(図5(b)に示す構成になるように)挟み込んだ以外は、製造例3-1と同様にして、製造例3-2の積層体を作製した。
実施例2-2の仮固定材用積層フィルムの光吸収層が設けられていない面上に、さらに第2の光吸収層(銅)及び第1の光吸収層(チタン)をこの順に積層して、仮固定材用積層フィルムを作製した。なお、当該光吸収層は、実施例2-2と同様に、逆スパッタリングによる前処理(Ar流速:1.2×10-2Pa・m3/s(70sccm)、RF電力:300W、時間:300秒間)後、表3に示す処理条件でRFスパッタリングを行い、チタン/銅の厚みを50nm/200nmとした。このように作製した仮固定材用積層フィルムを、図5(c)に示す構成になるように、シリコンウェハとスライドガラスとの間に挟み込んだ以外は、製造例3-1と同様にして、製造例3-3の積層体を作製した。
<剥離性試験>
インコヒーレント光の光源として、キセノンランプを用いた。表5に示す照射条件で、製造例3-1~3-3の積層体をキセノンランプで照射し、支持部材からの剥離性を評価した。キセノンランプとして、Xenon社製のS2300(波長範囲:270nm~近赤外領域、単位面積あたりの照射エネルギー:17J/cm2)を用い、積層体の支持部材(スライドガラス)を介して仮固定材層を照射した。照射距離は、光源とスライドガラスを設置したステージとの距離である。剥離性試験の評価は、キセノンランプによる照射後、自然にシリコンウェハがスライドガラスから剥離したものを「A」と評価し、シリコンウェハとスライドガラスとの間にピンセットを差し込んだときに、シリコンウェハが破損することなく、分離できたものを「B」と評価し、分離できなかったものを「C」と評価した。結果を表5に示す。
<剥離性試験>
コヒーレント光の光源として、YAGレーザーを用いた。製造例3-1~3-3の積層体をYAGレーザーで照射し、支持部材からの剥離性を評価した。YAGレーザーとして、株式会社キーエンス社製のMD-H(波長:1064nm、出力:10W、走査速度:1000mm/s)を用い、積層体の支持部材(スライドガラス)を介して仮固定材層を照射した。剥離性試験の評価は、YAGレーザーによる照射後、自然にシリコンウェハがスライドガラスから剥離したものを「A」と評価し、シリコンウェハとスライドガラスとの間にピンセットを差し込んだときに、シリコンウェハが破損することなく、分離できたものを「B」と評価し、分離できなかったものを「C」と評価した。結果を表6に示す。
(製造例4-1~4-6)
<硬化性樹脂成分の調製>
熱可塑性樹脂として、水添スチレン系エラストマー(商品名:FG1924、クレイトンポリマージャパン株式会社)70質量部、エポキシ樹脂として、ジシクロペンタジエン型エポキシ樹脂(商品名:HP-7200H、DIC株式会社)30質量部、及び硬化促進剤として、1-シアノエチル-2-フェニルイミダゾール(商品名:キュアゾール2PZ-CN、四国化成株式会社)2質量部を混合した。なお、水添スチレン系エラストマーはトルエンで固形分25質量%に、エポキシ樹脂はトルエンで固形分50質量%に、それぞれ希釈して用いた。ミックスロータを用いて混合し、50回転/分で24時間撹拌することによって、溶剤としてトルエンを含む硬化性樹脂成分のワニスを調製した。
得られた硬化性樹脂成分のワニスを、精密塗工機を用いて、ポリエチレンテレフタレート(PET)フィルム(ピューレックスA31、帝人デュポンフィルム株式会社、厚み:38μm)の離型処理面に塗工し、80℃で10分間溶剤を乾燥除去し、約20μmの硬化性樹脂成分フィルム(樹脂層)を作製した。
支持部材として、スライドガラス(サイズ:20mm×15mm、厚み:1mm)を用意し、金属蒸着装置を用いて表7に示す金属種及び厚みで導電体層を作製し、これを光吸収層とした。なお、光吸収層においては、支持部材、第1の導電体層、及び第2の導電体層がこの順になるように積層した。次いで、上述の硬化性樹脂成分フィルムを50mm×50mmで切り出し、半導体部材として、シリコンウェハ(サイズ:8mm×10mm、厚み:750μm)を用意した。切り出した硬化性樹脂成分フィルムを光吸収層とスライドガラスとの間に、図5(a)に示す構成となるように挟み込み、熱圧着機を用いて、90℃、5秒間、1MPaの条件で仮熱圧着を行った。その後、防爆乾燥機で150℃、1時間の条件で熱硬化させることによって、製造例4-1~4-6の積層体を作製した。
<剥離性試験>
インコヒーレント光の光源として、キセノンランプを用いた。表7に示す照射条件で、製造例4-1~4-6の積層体をキセノンランプで照射し、支持部材からの剥離性を評価した。キセノンランプとして、Xenon社製のS2300(波長範囲:270nm~近赤外領域、単位面積あたりの照射エネルギー:17J/cm2)を用い、積層体の支持部材(スライドガラス)を介して仮固定材層を照射した。照射距離は、光源とスライドガラスを設置したステージとの距離である。剥離性試験の評価は、キセノンランプによる照射後、自然にシリコンウェハがスライドガラスから剥離したものを「A」と評価し、シリコンウェハとスライドガラスとの間にピンセットを差し込んだときに、シリコンウェハが破損することなく、分離できたものを「B」と評価し、分離できなかったものを「C」と評価した。結果を表7に示す。
(製造例5-1~5-7)
<硬化性樹脂成分の調製>
熱可塑性樹脂として、水添スチレン系エラストマー(商品名:FG1924、クレイトンポリマージャパン株式会社)70質量部、エポキシ樹脂として、ジシクロペンタジエン型エポキシ樹脂(商品名:HP-7200H、DIC株式会社)30質量部、及び硬化促進剤として、1-シアノエチル-2-フェニルイミダゾール(商品名:キュアゾール2PZ-CN、四国化成株式会社)2質量部を混合した。なお、水添スチレン系エラストマーはトルエンで固形分25質量%に、エポキシ樹脂はトルエンで固形分50質量%に、それぞれ希釈して用いた。ミックスロータを用いて混合し、50回転/分で24時間撹拌することによって、溶剤としてトルエンを含む硬化性樹脂成分のワニスを調製した。
得られた硬化性樹脂成分のワニスを、精密塗工機を用いて、ポリエチレンテレフタレート(PET)フィルム(ピューレックスA31、帝人デュポンフィルム株式会社、厚み:38μm)の離型処理面に塗工し、80℃で10分間溶剤を乾燥除去し、約20μmの硬化性樹脂成分フィルム(樹脂層)を作製した。
支持部材として、スライドガラス(サイズ:20mm×15mm、厚み:1mm)を用意し、スパッタリングによって表8に示す金属種及び厚みで導電体層を作製し、これを光吸収層とした。なお、当該光吸収層は、実施例2-2と同様に、逆スパッタリングによる前処理(Ar流速:1.2×10-2Pa・m3/s(70sccm)、RF電力:300W、時間:300秒間)後、表3に示す処理条件でRFスパッタリングを行った。2層の導電体層を有する光吸収層においては、支持部材、第1の導電体層、及び第2の導電体層がこの順になるように積層した。次いで、上述の硬化性樹脂成分フィルムを50mm×50mmで切り出し、半導体部材として、シリコンウェハ(サイズ:8mm×10mm、厚み:750μm)を用意した。切り出した硬化性樹脂成分フィルムを光吸収層とスライドガラスとの間に、図5(a)に示す構成となるように挟み込み、熱圧着機を用いて、90℃、5秒間、1MPaの条件で仮熱圧着を行った。その後、防爆乾燥機で150℃、1時間の条件で熱硬化させることによって、実施例5-1~5-7の積層体を作製した。
<剥離性試験>
インコヒーレント光の光源として、キセノンランプを用いた。表8に示す照射条件で、製造例5-1~5-7の積層体をキセノンランプで照射し、支持部材からの剥離性を評価した。キセノンランプとして、Xenon社製のS2300(波長範囲:270nm~近赤外領域、単位面積あたりの照射エネルギー:17J/cm2)を用い、積層体の支持部材(スライドガラス)を介して仮固定材層を照射した。照射距離は、光源とスライドガラスを設置したステージとの距離である。剥離性試験の評価は、キセノンランプによる照射後、自然にシリコンウェハがスライドガラスから剥離したものを「A」と評価し、シリコンウェハとスライドガラスとの間にピンセットを差し込んだときに、シリコンウェハが破損することなく、分離できたものを「B」と評価し、分離できなかったものを「C」と評価した。結果を表8に示す。
Claims (7)
- 支持部材と、前記支持部材上に設けられた、光を吸収して熱を発生する導電体からなる導電体層とを備え、
前記支持部材が、ガラス基板である、仮固定用積層体。 - 前記導電体が、金属又は合金を含む、請求項1に記載の仮固定用積層体。
- 前記導電体が、クロム、チタン、銅、アルミニウム、銀、金、及び白金からなる群より選ばれる少なくとも1種を含む、請求項1に記載の仮固定用積層体。
- 前記導電体層が、前記支持部材上に設けられた、第1の導電体からなる第1の導電体層と、前記第1の導電体層の前記支持部材の反対側の面上に設けられた、第2の導電体からなる第2の導電体層とから構成される、請求項1に記載の仮固定用積層体。
- 前記第1の導電体が、チタンを含み、
前記第2の導電体が、銅、アルミニウム、銀、金、及び白金からなる群より選ばれる少なくとも1種を含む、請求項4に記載の仮固定用積層体。 - 前記導電体層上に設けられた、硬化性樹脂成分を含む樹脂層をさらに備える、請求項1~5のいずれか一項に記載の仮固定用積層体。
- 支持部材と、仮固定材前駆体層とを備え、前記仮固定材前駆体層が、光を吸収して熱を発生する導電体からなる導電体層と、硬化性樹脂成分を含む樹脂層とを前記支持部材側からこの順に有する、仮固定用積層体を準備する工程と、
前記仮固定用積層体の前記仮固定材前駆体層を介して前記支持部材上に半導体部材を配置する工程と、
前記仮固定材前駆体層おける前記硬化性樹脂成分を硬化させ、前記支持部材と、前記導電体層、及び、前記硬化性樹脂成分の硬化物を含む樹脂硬化物層を有する仮固定材層と、前記半導体部材とがこの順に積層された積層体を作製する工程と、
前記積層体における前記仮固定材層にインコヒーレント光を照射して、前記支持部材から前記半導体部材を分離する工程と、
を備え、
前記支持部材が、ガラス基板である、半導体装置の製造方法。
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TWI805655B (zh) | 2023-06-21 |
CN111418044A (zh) | 2020-07-14 |
KR20230042758A (ko) | 2023-03-29 |
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JP7196857B2 (ja) | 2022-12-27 |
TW202335871A (zh) | 2023-09-16 |
TW201936411A (zh) | 2019-09-16 |
WO2019106846A1 (ja) | 2019-06-06 |
KR102513065B1 (ko) | 2023-03-22 |
US20200399506A1 (en) | 2020-12-24 |
US11840648B2 (en) | 2023-12-12 |
CN117238828A (zh) | 2023-12-15 |
WO2019107508A1 (ja) | 2019-06-06 |
US20240093059A1 (en) | 2024-03-21 |
CN111418044B (zh) | 2023-08-29 |
KR20200091864A (ko) | 2020-07-31 |
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