JP2023017839A - 太陽電池の製造 - Google Patents
太陽電池の製造 Download PDFInfo
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- JP2023017839A JP2023017839A JP2022172291A JP2022172291A JP2023017839A JP 2023017839 A JP2023017839 A JP 2023017839A JP 2022172291 A JP2022172291 A JP 2022172291A JP 2022172291 A JP2022172291 A JP 2022172291A JP 2023017839 A JP2023017839 A JP 2023017839A
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- silicon
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- annealing
- dopant
- sputtering
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 288
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 286
- 239000010703 silicon Substances 0.000 claims abstract description 286
- 238000000034 method Methods 0.000 claims abstract description 114
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 112
- 238000000137 annealing Methods 0.000 claims abstract description 107
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 58
- 238000000151 deposition Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 43
- 239000002019 doping agent Substances 0.000 claims description 155
- 238000004544 sputter deposition Methods 0.000 claims description 102
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 55
- 229920005591 polysilicon Polymers 0.000 claims description 54
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 51
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 47
- 229910052796 boron Inorganic materials 0.000 claims description 43
- 230000008021 deposition Effects 0.000 claims description 36
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 19
- 239000011574 phosphorus Substances 0.000 claims description 19
- 229910052787 antimony Inorganic materials 0.000 claims description 17
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052785 arsenic Inorganic materials 0.000 claims description 11
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000012707 chemical precursor Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000005215 recombination Methods 0.000 description 72
- 230000006798 recombination Effects 0.000 description 72
- 235000012431 wafers Nutrition 0.000 description 71
- 238000001953 recrystallisation Methods 0.000 description 44
- 230000008569 process Effects 0.000 description 36
- 230000005641 tunneling Effects 0.000 description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 229910008423 Si—B Inorganic materials 0.000 description 24
- 238000002161 passivation Methods 0.000 description 22
- 239000007789 gas Substances 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 239000000203 mixture Substances 0.000 description 19
- 239000002800 charge carrier Substances 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 14
- 238000013459 approach Methods 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 10
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 10
- 238000005477 sputtering target Methods 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 238000005457 optimization Methods 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000009776 industrial production Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910052752 metalloid Inorganic materials 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002424 x-ray crystallography Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000000541 cathodic arc deposition Methods 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005328 electron beam physical vapour deposition Methods 0.000 description 2
- 239000000383 hazardous chemical Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- -1 metalloid nitrides Chemical class 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000002202 sandwich sublimation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
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Abstract
Description
・p型ウェハとリン拡散によって形成された前面n+領域を使用する、一般的なタイプのシリコン太陽電池に実装されたp+裏面領域として。現在記載されている方法によって形成された不動態化接点は、アルミニウムを合金化することによって形成された現在のp+領域に取って代わり、再結合損失のはるかに良好な抑制をもたらすだろう。それはまた、Al2O3とSiNの誘電体層が後面に堆積され、続いてレーザで局所的に切除され、最後にAlペーストで金属化されるこれまでの技術と有利に競合する。本発明の不動態化接点は、改善された太陽電池性能およびプロセスの単純化をもたらすであろう。
・上記の通りであるが、n型ウェハを使用し、ここでp+ドープされたポリシリコンが、この場合は背面に配置されるデバイスの主接合部を形成し得る。現在、そのようなセルは、ホウ素をn型ウェハに拡散させることによって製造されている。
・本発明によるp+不動態化接点は、IBCセルプロセス(噛合い指型背面接合型太陽電池)に実装することができる。p+多結晶シリコン層は、場合によっては再結晶化ステップの前に、選択的に(例えば、pドープシリコン膜を堆積するためにステンシルマスクを用いて)堆積することができ、または適切なパターンで選択的にエッチングすることができる。続いて、本発明によるn+不動態化接点を、シリコンウェハの大部分が今露出している領域上に形成することができる。あるいは、これらの露出領域をリン拡散ステップにかけることにより、ウェハの裏側にp+領域とn+領域との噛合い指型構造を形成することができる。
・本発明によるn+不動態化接点は、上に記載したものに対する補完的な方法において使用することができる。
・本発明に従って製造されたp+層およびn+層は、p+nn+またはn+pp+太陽電池構造を形成するために、シリコンウェハの反対側に形成することができる。
NEMETH, Bill et al., Polycrystalline silicon passivated tunneling contacts for high efficiency solar cells, Journal of Materials Research, March 28, 2016, Vol.31, Issue 6, pp. 671-681は、非晶質シリコンの層がCVDにより堆積され、その後、アニールされ、多結晶シリコンが形成される、シリコン太陽電池を製造する方法を開示する。
・p型ウェハとリン拡散によって形成された前面n+領域を使用する、一般的なタイプのシリコン太陽電池に実装されたp+裏面領域として。現在記載されている方法によって形成された不動態化接点は、アルミニウムを合金化することによって形成された現在のp+領域に取って代わり、再結合損失のはるかに良好な抑制をもたらすだろう。それはまた、Al2O3とSiNの誘電体層が後面に堆積され、続いてレーザで局所的に切除され、最後にAlペーストで金属化されるこれまでの技術と有利に競合する。本発明の不動態化接点は、改善された太陽電池性能およびプロセスの単純化をもたらすであろう。
・上記の通りであるが、n型ウェハを使用し、ここでp+ドープされたポリシリコンが、この場合は背面に配置されるデバイスの主接合部を形成し得る。現在、そのようなセルは、ホウ素をn型ウェハに拡散させることによって製造されている。
・本発明によるp+不動態化接点は、IBCセルプロセス(噛合い指型背面接合型太陽電池)に実装することができる。p+多結晶シリコン層は、場合によっては再結晶化ステップの前に、選択的に(例えば、pドープシリコン膜を堆積するためにステンシルマスクを用いて)堆積することができ、または適切なパターンで選択的にエッチングすることができる。続いて、本発明によるn+不動態化接点を、シリコンウェハの大部分が今露出している領域上に形成することができる。あるいは、これらの露出領域をリン拡散ステップ
にかけることにより、ウェハの裏側にp+領域とn+領域との噛合い指型構造を形成することができる。
・本発明によるn+不動態化接点は、上に記載したものに対する補完的な方法において使用することができる。
・本発明に従って製造されたp+層およびn+層は、p+nn+またはn+pp+太陽電池構造を形成するために、シリコンウェハの反対側に形成することができる。
Claims (20)
- ・物理蒸着法を用いて基板上に非晶質シリコンの層を堆積すること、および
・多結晶シリコンの層を生成するように前記非晶質シリコンをアニールすること
を含み、前記基板はシリコンウェハ上に配置された誘電体の層である、
太陽電池の製造方法。 - 前記物理蒸着法がスパッタリングを含む、請求項1に記載の方法。
- 前記誘電体が、酸化シリコン、窒化シリコン、酸化チタン、酸化ハフニウムおよび酸化アルミニウム、またはこれらの2つ以上の組み合わせからなる群から選択される、請求項1または2に記載の方法。
- 前記誘電体が酸化シリコンまたは酸化シリコンと窒化シリコンの組み合わせである、請求項3に記載の方法。
- 前記アニーリングステップがn型またはp型多結晶シリコン層を生成するようにドーパントを用いて、前記堆積ステップの間に前記非晶質シリコンをドープするステップをさらに含む、請求項1~4のいずれか一項に記載の方法。
- 前記アニーリングステップがn型またはp型多結晶シリコン層を生成するようにドーパントを用いて、前記堆積ステップとアニーリングステップとの間に前記非晶質シリコンをドープするステップをさらに含む、請求項1~5のいずれか一項に記載の方法。
- n型またはp型多結晶シリコン層を生成するようにドーパントを用いて、前記アニーリングステップの間および/または後に前記シリコンをドープするステップをさらに含む、請求項1~6のいずれか一項に記載の方法。
- 前記ドーパントが、ホウ素、インジウム、ガリウムおよびアルミニウムからなる群から選択され、それによって前記アニーリングがp型シリコンを生成する、請求項5~7のいずれか一項に記載の方法。
- 前記ドーパントが、アンチモン、リンおよびヒ素からなる群から選択され、それによって前記アニーリングがn型シリコンを生成する、請求項5~7のいずれか一項に記載の方法。
- 前記堆積ステップが、シリコンおよび前記ドーパントを含むターゲットを使用するスパッタリングを含み、それによって前記スパッタリングは前記ドーパントを含む非晶質シリコンの層を前記基板上に堆積し、それによって前記アニーリングステップはドープされた多結晶シリコンの層を生成する、請求項5~9のいずれか一項に記載の方法。
- 前記堆積ステップが、ドーパントを含まずにシリコンを含むターゲットと、ドーパントと任意選択的にシリコンとを含む別のターゲットとを使用するスパッタリングを含み、それによって、前記スパッタリングは前記ドーパントを含む非晶質シリコンの層を前記基板上に堆積し、それによって、前記アニーリングステップはドープされた多結晶シリコンの層を生成する、請求項5~9のいずれか一項に記載の方法。
- 前記誘電体の層が約5nm未満の厚さである、請求項1~11のいずれか一項に記載の方法。
- 前記堆積が、前記非晶質シリコンの層が約5~約500nmの厚さに成長するのに十分な時間継続される、請求項1~12のいずれか一項に記載の方法。
- 前記アニーリングが、前記非晶質シリコンの層を多結晶シリコンに変換するのに十分な条件下に存在する、請求項1~13のいずれか一項に記載の方法。
- 前記条件が約700~約1000℃の温度でのアニーリングを含む、請求項14に記載の方法。
- ・シリコンウェハ、
・多結晶シリコンの層、および
・前記シリコンウェハと前記多結晶シリコンの層との間に配置された誘電体の層
を備え、前記多結晶シリコンの層は、シリコンのための化学的前駆体を使用せずに生成される、太陽電池。 - 前記太陽電池が、
・物理蒸着法を用いて基板上に非晶質シリコンの層を堆積すること、および
・前記多結晶シリコンの層を生成するように前記非晶質シリコンをアニールすること
を含むプロセスによって製造され、
前記基板は前記シリコンウェハ上に配置された前記誘電体の層である、
請求項16に記載の太陽電池。 - 太陽電池の製造のためのシリコンの物理蒸着法の使用。
- 前記物理蒸着法が、シリコンウェハ上に配置された誘電体層上に非晶質シリコンの層を堆積する、請求項18に記載の使用。
- 前記非晶質シリコンの層がドーパントを含む、請求項19に記載の使用。
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