JP2022532755A5 - - Google Patents

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Publication number
JP2022532755A5
JP2022532755A5 JP2021568365A JP2021568365A JP2022532755A5 JP 2022532755 A5 JP2022532755 A5 JP 2022532755A5 JP 2021568365 A JP2021568365 A JP 2021568365A JP 2021568365 A JP2021568365 A JP 2021568365A JP 2022532755 A5 JP2022532755 A5 JP 2022532755A5
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compound
dielectric constant
low dielectric
substrate
constant film
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JP2021568365A
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Japanese (ja)
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JP7475371B2 (ja
JP2022532755A (ja
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Priority claimed from CN201910413247.9A external-priority patent/CN110158052B/zh
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JP2021568365A 2019-05-17 2020-05-14 低誘電率膜及びその製造方法 Active JP7475371B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201910413247.9A CN110158052B (zh) 2019-05-17 2019-05-17 低介电常数膜及其制备方法
CN201910413247.9 2019-05-17
PCT/CN2020/090119 WO2020233480A1 (zh) 2019-05-17 2020-05-14 低介电常数膜及其制备方法

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JP2022532755A JP2022532755A (ja) 2022-07-19
JP2022532755A5 true JP2022532755A5 (https=) 2023-05-16
JP7475371B2 JP7475371B2 (ja) 2024-04-26

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JP2021568365A Active JP7475371B2 (ja) 2019-05-17 2020-05-14 低誘電率膜及びその製造方法

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US (1) US11904352B2 (https=)
EP (1) EP3971320A4 (https=)
JP (1) JP7475371B2 (https=)
KR (1) KR20220008319A (https=)
CN (1) CN110158052B (https=)
TW (1) TWI743790B (https=)
WO (1) WO2020233480A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110129769B (zh) 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 疏水性的低介电常数膜及其制备方法
CN110158052B (zh) 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 低介电常数膜及其制备方法
US11898248B2 (en) * 2019-12-18 2024-02-13 Jiangsu Favored Nanotechnology Co., Ltd. Coating apparatus and coating method
CN115400930A (zh) * 2021-05-26 2022-11-29 江苏菲沃泰纳米科技股份有限公司 一种等离子体聚合涂层、制备方法及器件
KR102846208B1 (ko) * 2022-01-20 2025-08-19 성균관대학교산학협력단 플라즈마 중합체 박막 및 이의 제조 방법
CN114438478B (zh) * 2022-01-27 2024-04-26 深圳市技高美纳米科技有限公司 硅基纳米涂层的制备方法、硅基纳米涂层和印制电路板组件

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5244730A (en) 1991-04-30 1993-09-14 International Business Machines Corporation Plasma deposition of fluorocarbon
JP3435186B2 (ja) 1993-04-15 2003-08-11 株式会社東芝 半導体装置
US6149987A (en) * 1998-04-07 2000-11-21 Applied Materials, Inc. Method for depositing low dielectric constant oxide films
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
JP3545364B2 (ja) * 2000-12-19 2004-07-21 キヤノン販売株式会社 半導体装置及びその製造方法
SG98468A1 (en) 2001-01-17 2003-09-19 Air Prod & Chem Organosilicon precursors for interlayer dielectric films with low dielectric constants
US6716770B2 (en) * 2001-05-23 2004-04-06 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
KR20030002993A (ko) 2001-06-29 2003-01-09 학교법인 포항공과대학교 저유전체 박막의 제조방법
JP3778045B2 (ja) 2001-10-09 2006-05-24 三菱電機株式会社 低誘電率材料の製造方法および低誘電率材料、並びにこの低誘電率材料を用いた絶縁膜および半導体装置
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
EP1504138A2 (en) * 2002-05-08 2005-02-09 Applied Materials, Inc. Method for using low dielectric constant film by electron beam
US20040137757A1 (en) * 2003-01-13 2004-07-15 Applied Materials, Inc. Method and apparatus to improve cracking thresholds and mechanical properties of low-k dielectric material
US7288292B2 (en) 2003-03-18 2007-10-30 International Business Machines Corporation Ultra low k (ULK) SiCOH film and method
US20040197474A1 (en) 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
JP4344841B2 (ja) 2003-05-30 2009-10-14 独立行政法人産業技術総合研究所 低誘電率絶縁膜の形成方法
US7646081B2 (en) 2003-07-08 2010-01-12 Silecs Oy Low-K dielectric material
US7030468B2 (en) 2004-01-16 2006-04-18 International Business Machines Corporation Low k and ultra low k SiCOH dielectric films and methods to form the same
US7049247B2 (en) 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US7422776B2 (en) * 2004-08-24 2008-09-09 Applied Materials, Inc. Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)
US7135402B2 (en) 2005-02-01 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing pores of low-k dielectrics using CxHy
JP5093479B2 (ja) * 2005-11-24 2012-12-12 日本電気株式会社 多孔質絶縁膜の形成方法
US20070172666A1 (en) 2006-01-24 2007-07-26 Denes Ferencz S RF plasma-enhanced deposition of fluorinated films
CN101393865B (zh) * 2007-09-17 2010-10-13 联华电子股份有限公司 超低介电常数介电层及其形成方法
TWI510665B (zh) 2009-02-17 2015-12-01 東京威力科創股份有限公司 使用電漿反應製程來形成氟碳化物層的方法
JP2013520841A (ja) * 2010-02-25 2013-06-06 アプライド マテリアルズ インコーポレイテッド プラズマ化学気相堆積による、有機官能基と共にシリコンを含有するハイブリッド前駆体を使用する超低誘電材料
US8178439B2 (en) 2010-03-30 2012-05-15 Tokyo Electron Limited Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices
US8216861B1 (en) 2011-06-28 2012-07-10 Applied Materials, Inc. Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition
WO2013102011A2 (en) 2011-12-30 2013-07-04 Gvd Corporation Coatings for electrowetting and electrofluidic devices
TWI449802B (zh) 2012-06-06 2014-08-21 Univ Nat Chiao Tung 掺碳氮化矽薄膜及其製造方法與裝置
US9352891B2 (en) * 2012-12-28 2016-05-31 Ade, Inc. Suspension packaging structures and methods of making and using the same
US20140183087A1 (en) * 2012-12-31 2014-07-03 Funai Electric Co., Ltd. Fluid Level Sensing Tank Materials
GB201305500D0 (en) 2013-03-26 2013-05-08 Semblant Ltd Coated electrical assembly
US9607825B2 (en) 2014-04-08 2017-03-28 International Business Machines Corporation Hydrogen-free silicon-based deposited dielectric films for nano device fabrication
KR20160029985A (ko) 2014-09-05 2016-03-16 성균관대학교산학협력단 유전체에 균일하게 플라즈마를 발생시키는 방법
CN105280816A (zh) 2015-09-22 2016-01-27 复旦大学 一种使用等离子体交联技术制备有机场效应晶体管介电层的方法
CN106291911B (zh) 2016-08-10 2019-06-11 华南师范大学 复合层结构的疏水性介电层、其制备方法和电润湿器件
CN106496529B (zh) 2016-11-17 2019-01-18 北京航空航天大学 一种低介电常数二乙炔基聚合物、其制备方法及其用途
CN106958012A (zh) 2017-05-21 2017-07-18 无锡荣坚五金工具有限公司 一种基材运动式等离子体放电制备纳米涂层的设备及方法
CN107587120B (zh) 2017-08-23 2018-12-18 江苏菲沃泰纳米科技有限公司 一种具有调制结构的高绝缘纳米防护涂层的制备方法
CN109277269B (zh) 2018-10-24 2020-07-14 江苏菲沃泰纳米科技有限公司 一种环氧纳米涂层及其制备方法
CN110129769B (zh) 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 疏水性的低介电常数膜及其制备方法
CN110158052B (zh) * 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 低介电常数膜及其制备方法

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