JP2022527694A5 - - Google Patents

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Publication number
JP2022527694A5
JP2022527694A5 JP2021556710A JP2021556710A JP2022527694A5 JP 2022527694 A5 JP2022527694 A5 JP 2022527694A5 JP 2021556710 A JP2021556710 A JP 2021556710A JP 2021556710 A JP2021556710 A JP 2021556710A JP 2022527694 A5 JP2022527694 A5 JP 2022527694A5
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JP
Japan
Prior art keywords
holes
plate
interconnected
diameter
gas distribution
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JP2021556710A
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English (en)
Japanese (ja)
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JP7781639B2 (ja
JP2022527694A (ja
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Priority claimed from PCT/US2020/020070 external-priority patent/WO2020197684A1/en
Publication of JP2022527694A publication Critical patent/JP2022527694A/ja
Publication of JP2022527694A5 publication Critical patent/JP2022527694A5/ja
Application granted granted Critical
Publication of JP7781639B2 publication Critical patent/JP7781639B2/ja
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JP2021556710A 2019-03-27 2020-02-27 高アスペクト比の孔及び高い孔密度を有するガス分配プレート Active JP7781639B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962824369P 2019-03-27 2019-03-27
US62/824,369 2019-03-27
PCT/US2020/020070 WO2020197684A1 (en) 2019-03-27 2020-02-27 Gas distribution plate with high aspect ratio holes and a high hole density

Publications (3)

Publication Number Publication Date
JP2022527694A JP2022527694A (ja) 2022-06-03
JP2022527694A5 true JP2022527694A5 (https=) 2023-03-08
JP7781639B2 JP7781639B2 (ja) 2025-12-08

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ID=72607016

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JP2021556710A Active JP7781639B2 (ja) 2019-03-27 2020-02-27 高アスペクト比の孔及び高い孔密度を有するガス分配プレート

Country Status (7)

Country Link
US (2) US11332827B2 (https=)
JP (1) JP7781639B2 (https=)
KR (1) KR102865277B1 (https=)
CN (1) CN113508191B (https=)
SG (1) SG11202108874QA (https=)
TW (1) TWI832986B (https=)
WO (1) WO2020197684A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11371148B2 (en) 2020-08-24 2022-06-28 Applied Materials, Inc. Fabricating a recursive flow gas distribution stack using multiple layers
US20230234160A1 (en) * 2022-01-24 2023-07-27 Applied Materials, Inc. Diffusion bonding of pure metal bodies
CN115074704A (zh) * 2022-07-27 2022-09-20 拓荆科技(上海)有限公司 喷淋装置
US12503759B2 (en) 2023-03-07 2025-12-23 Rtx Corporation Chemical vapor infiltration tooling hole modification for optimizing infiltration in ceramic matrix composites
US12479775B2 (en) * 2023-03-07 2025-11-25 Rtx Corporation Chemical vapor infiltration tooling for optimizing infiltration in ceramic matrix composites
KR20250014860A (ko) * 2023-07-21 2025-02-03 세메스 주식회사 샤워헤드 어셈블리를 포함하는 기판 처리 장치
KR102802229B1 (ko) * 2024-04-04 2025-05-02 주식회사 문성엠에스케이 반도체 전극(cathode)의 홀 형성 방법

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
JPH05175135A (ja) * 1991-10-03 1993-07-13 Ulvac Japan Ltd 光ｃｖｄ装置
US5439524A (en) * 1993-04-05 1995-08-08 Vlsi Technology, Inc. Plasma processing apparatus
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
KR950020993A (ko) 1993-12-22 1995-07-26 김광호 반도체 제조장치
JP3468859B2 (ja) * 1994-08-16 2003-11-17 富士通株式会社 気相処理装置及び気相処理方法
US5792269A (en) * 1995-10-31 1998-08-11 Applied Materials, Inc. Gas distribution for CVD systems
US5819434A (en) * 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US5781693A (en) * 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US6388381B2 (en) * 1996-09-10 2002-05-14 The Regents Of The University Of California Constricted glow discharge plasma source
US6140773A (en) * 1996-09-10 2000-10-31 The Regents Of The University Of California Automated control of linear constricted plasma source array
EP0854210B1 (en) * 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus for forming thin film
US6051286A (en) * 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6080446A (en) * 1997-08-21 2000-06-27 Anelva Corporation Method of depositing titanium nitride thin film and CVD deposition apparatus
US6098568A (en) * 1997-12-01 2000-08-08 Applied Materials, Inc. Mixed frequency CVD apparatus
US6041734A (en) * 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US7004107B1 (en) * 1997-12-01 2006-02-28 Applied Materials Inc. Method and apparatus for monitoring and adjusting chamber impedance
US6079356A (en) * 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6050506A (en) * 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US6250250B1 (en) * 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
US6565661B1 (en) * 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
JP4487338B2 (ja) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 成膜処理装置及び成膜処理方法
DE10060002B4 (de) * 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
US6381021B1 (en) * 2000-06-22 2002-04-30 Applied Materials, Inc. Method and apparatus for measuring reflectivity of deposited films
US6461435B1 (en) * 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
KR100756107B1 (ko) * 2001-02-09 2007-09-05 동경 엘렉트론 주식회사 성막 장치
US6761796B2 (en) * 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
SG104976A1 (en) * 2001-07-13 2004-07-30 Asml Us Inc Modular injector and exhaust assembly
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
US7008484B2 (en) * 2002-05-06 2006-03-07 Applied Materials Inc. Method and apparatus for deposition of low dielectric constant materials
JP2003324072A (ja) * 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6884296B2 (en) * 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
JP4260450B2 (ja) * 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
CA2471987C (en) * 2002-10-07 2008-09-02 Sekisui Chemical Co., Ltd. Plasma surface processing apparatus
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US8580076B2 (en) * 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US7581511B2 (en) * 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US20060054280A1 (en) * 2004-02-23 2006-03-16 Jang Geun-Ha Apparatus of manufacturing display substrate and showerhead assembly equipped therein
US20050223986A1 (en) * 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US7785672B2 (en) * 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US7622005B2 (en) * 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
KR101063737B1 (ko) * 2004-07-09 2011-09-08 주성엔지니어링(주) 기판 제조장비의 샤워헤드
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US20060228490A1 (en) * 2005-04-07 2006-10-12 Applied Materials, Inc. Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems
KR100599056B1 (ko) 2005-07-21 2006-07-12 삼성전자주식회사 포토레지스트 제거 장치 및 방법
AU2007230338B2 (en) * 2006-03-24 2011-04-07 Mitsubishi Heavy Industries, Ltd. Electrode and vacuum processing apparatus
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
CN100577866C (zh) 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
US20080302303A1 (en) * 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US8142606B2 (en) * 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
CN101802254B (zh) * 2007-10-11 2013-11-27 瓦伦斯处理设备公司 化学气相沉积反应器
JP4816616B2 (ja) * 2007-10-15 2011-11-16 東京エレクトロン株式会社 ガスシャワーヘッド、処理装置、処理方法及び処理装置のメンテナンス方法
US20090155488A1 (en) * 2007-12-18 2009-06-18 Asm Japan K.K. Shower plate electrode for plasma cvd reactor
US8876024B2 (en) * 2008-01-10 2014-11-04 Applied Materials, Inc. Heated showerhead assembly
JP2009231558A (ja) * 2008-03-24 2009-10-08 Tokyo Electron Ltd プラズマ処理装置とガス供給部材およびその製造方法
US8702867B2 (en) * 2008-07-08 2014-04-22 Jusung Engineering Co., Ltd. Gas distribution plate and substrate treating apparatus including the same
TWI385272B (zh) * 2009-09-25 2013-02-11 Ind Tech Res Inst 氣體分佈板及其裝置
JP2011086822A (ja) * 2009-10-16 2011-04-28 Mitsubishi Electric Corp プラズマ処理装置
JP2011129618A (ja) * 2009-12-16 2011-06-30 Fuji Electric Co Ltd 薄膜形成装置
EP2360292B1 (en) * 2010-02-08 2012-03-28 Roth & Rau AG Parallel plate reactor for uniform thin film deposition with reduced tool foot-print
US20120097330A1 (en) * 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design
SG192967A1 (en) * 2011-03-04 2013-09-30 Novellus Systems Inc Hybrid ceramic showerhead
JP5955062B2 (ja) * 2011-04-25 2016-07-20 東京エレクトロン株式会社 プラズマ処理装置
US8960235B2 (en) * 2011-10-28 2015-02-24 Applied Materials, Inc. Gas dispersion apparatus
CN103903946B (zh) * 2012-12-26 2017-11-17 中微半导体设备(上海)有限公司 一种用于等离子反应器的气体喷淋头
US9484190B2 (en) * 2014-01-25 2016-11-01 Yuri Glukhoy Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area
US10100408B2 (en) * 2014-03-03 2018-10-16 Applied Materials, Inc. Edge hump reduction faceplate by plasma modulation
US10077497B2 (en) * 2014-05-30 2018-09-18 Lam Research Corporation Hollow cathode discharge (HCD) suppressing capacitively coupled plasma electrode and gas distribution faceplate
JP6868616B2 (ja) 2015-10-08 2021-05-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 背面でのプラズマ点火が低減されたシャワーヘッド
US10358722B2 (en) * 2015-12-14 2019-07-23 Lam Research Corporation Showerhead assembly
KR20170121775A (ko) * 2016-04-25 2017-11-03 삼성디스플레이 주식회사 화학 기상 증착 장치
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US20180340257A1 (en) * 2017-05-25 2018-11-29 Applied Materials, Inc. Diffuser for uniformity improvement in display pecvd applications

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