TWI832986B - 具有高長寬比孔洞及高孔洞密度的氣體分佈板 - Google Patents

具有高長寬比孔洞及高孔洞密度的氣體分佈板 Download PDF

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Publication number
TWI832986B
TWI832986B TW109107594A TW109107594A TWI832986B TW I832986 B TWI832986 B TW I832986B TW 109107594 A TW109107594 A TW 109107594A TW 109107594 A TW109107594 A TW 109107594A TW I832986 B TWI832986 B TW I832986B
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TW
Taiwan
Prior art keywords
diameter
holes
plate
hole
gas distribution
Prior art date
Application number
TW109107594A
Other languages
English (en)
Chinese (zh)
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TW202039088A (zh
Inventor
蘇密特 阿加瓦爾
桑傑夫 巴魯札
查德 彼得森
麥可R 萊斯
Original Assignee
美商應用材料股份有限公司
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Publication of TW202039088A publication Critical patent/TW202039088A/zh
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Publication of TWI832986B publication Critical patent/TWI832986B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
TW109107594A 2019-03-27 2020-03-09 具有高長寬比孔洞及高孔洞密度的氣體分佈板 TWI832986B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962824369P 2019-03-27 2019-03-27
US62/824,369 2019-03-27

Publications (2)

Publication Number Publication Date
TW202039088A TW202039088A (zh) 2020-11-01
TWI832986B true TWI832986B (zh) 2024-02-21

Family

ID=72607016

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109107594A TWI832986B (zh) 2019-03-27 2020-03-09 具有高長寬比孔洞及高孔洞密度的氣體分佈板

Country Status (7)

Country Link
US (2) US11332827B2 (https=)
JP (1) JP7781639B2 (https=)
KR (1) KR102865277B1 (https=)
CN (1) CN113508191B (https=)
SG (1) SG11202108874QA (https=)
TW (1) TWI832986B (https=)
WO (1) WO2020197684A1 (https=)

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Also Published As

Publication number Publication date
US11332827B2 (en) 2022-05-17
KR102865277B1 (ko) 2025-09-25
WO2020197684A1 (en) 2020-10-01
CN113508191B (zh) 2024-06-11
TW202039088A (zh) 2020-11-01
JP7781639B2 (ja) 2025-12-08
KR20210133302A (ko) 2021-11-05
US20220380898A1 (en) 2022-12-01
CN113508191A (zh) 2021-10-15
SG11202108874QA (en) 2021-10-28
JP2022527694A (ja) 2022-06-03
US20200308703A1 (en) 2020-10-01

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