CN113508191B - 具有高长宽比孔洞及高孔洞密度的气体分布板 - Google Patents

具有高长宽比孔洞及高孔洞密度的气体分布板 Download PDF

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Publication number
CN113508191B
CN113508191B CN202080017675.0A CN202080017675A CN113508191B CN 113508191 B CN113508191 B CN 113508191B CN 202080017675 A CN202080017675 A CN 202080017675A CN 113508191 B CN113508191 B CN 113508191B
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China
Prior art keywords
holes
plate
diameter
hole
gas distribution
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CN202080017675.0A
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Chinese (zh)
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CN113508191A (zh
Inventor
S·阿加瓦尔
S·巴录佳
C·彼德森
M·R·赖斯
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Applied Materials Inc
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Applied Materials Inc
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/0008Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
CN202080017675.0A 2019-03-27 2020-02-27 具有高长宽比孔洞及高孔洞密度的气体分布板 Active CN113508191B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962824369P 2019-03-27 2019-03-27
US62/824,369 2019-03-27
PCT/US2020/020070 WO2020197684A1 (en) 2019-03-27 2020-02-27 Gas distribution plate with high aspect ratio holes and a high hole density

Publications (2)

Publication Number Publication Date
CN113508191A CN113508191A (zh) 2021-10-15
CN113508191B true CN113508191B (zh) 2024-06-11

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CN202080017675.0A Active CN113508191B (zh) 2019-03-27 2020-02-27 具有高长宽比孔洞及高孔洞密度的气体分布板

Country Status (7)

Country Link
US (2) US11332827B2 (https=)
JP (1) JP7781639B2 (https=)
KR (1) KR102865277B1 (https=)
CN (1) CN113508191B (https=)
SG (1) SG11202108874QA (https=)
TW (1) TWI832986B (https=)
WO (1) WO2020197684A1 (https=)

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Also Published As

Publication number Publication date
US11332827B2 (en) 2022-05-17
KR102865277B1 (ko) 2025-09-25
WO2020197684A1 (en) 2020-10-01
TWI832986B (zh) 2024-02-21
TW202039088A (zh) 2020-11-01
JP7781639B2 (ja) 2025-12-08
KR20210133302A (ko) 2021-11-05
US20220380898A1 (en) 2022-12-01
CN113508191A (zh) 2021-10-15
SG11202108874QA (en) 2021-10-28
JP2022527694A (ja) 2022-06-03
US20200308703A1 (en) 2020-10-01

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