KR102865277B1 - 높은 종횡비 홀들 및 높은 홀 밀도를 갖는 가스 분배 플레이트 - Google Patents

높은 종횡비 홀들 및 높은 홀 밀도를 갖는 가스 분배 플레이트

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Publication number
KR102865277B1
KR102865277B1 KR1020217033028A KR20217033028A KR102865277B1 KR 102865277 B1 KR102865277 B1 KR 102865277B1 KR 1020217033028 A KR1020217033028 A KR 1020217033028A KR 20217033028 A KR20217033028 A KR 20217033028A KR 102865277 B1 KR102865277 B1 KR 102865277B1
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KR
South Korea
Prior art keywords
holes
plate
diameter
interconnected
gas distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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KR1020217033028A
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English (en)
Korean (ko)
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KR20210133302A (ko
Inventor
수밋 아가왈
산지브 발루자
차드 피터슨
마이클 알. 라이스
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20210133302A publication Critical patent/KR20210133302A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
KR1020217033028A 2019-03-27 2020-02-27 높은 종횡비 홀들 및 높은 홀 밀도를 갖는 가스 분배 플레이트 Active KR102865277B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962824369P 2019-03-27 2019-03-27
US62/824,369 2019-03-27
PCT/US2020/020070 WO2020197684A1 (en) 2019-03-27 2020-02-27 Gas distribution plate with high aspect ratio holes and a high hole density

Publications (2)

Publication Number Publication Date
KR20210133302A KR20210133302A (ko) 2021-11-05
KR102865277B1 true KR102865277B1 (ko) 2025-09-25

Family

ID=72607016

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217033028A Active KR102865277B1 (ko) 2019-03-27 2020-02-27 높은 종횡비 홀들 및 높은 홀 밀도를 갖는 가스 분배 플레이트

Country Status (7)

Country Link
US (2) US11332827B2 (https=)
JP (1) JP7781639B2 (https=)
KR (1) KR102865277B1 (https=)
CN (1) CN113508191B (https=)
SG (1) SG11202108874QA (https=)
TW (1) TWI832986B (https=)
WO (1) WO2020197684A1 (https=)

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US20250025896A1 (en) * 2023-07-21 2025-01-23 Semes Co., Ltd. Substrate processing apparatus including showerhead assembly

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US20230234160A1 (en) * 2022-01-24 2023-07-27 Applied Materials, Inc. Diffusion bonding of pure metal bodies
CN115074704A (zh) * 2022-07-27 2022-09-20 拓荆科技(上海)有限公司 喷淋装置
US12503759B2 (en) 2023-03-07 2025-12-23 Rtx Corporation Chemical vapor infiltration tooling hole modification for optimizing infiltration in ceramic matrix composites
US12479775B2 (en) * 2023-03-07 2025-11-25 Rtx Corporation Chemical vapor infiltration tooling for optimizing infiltration in ceramic matrix composites
KR102802229B1 (ko) * 2024-04-04 2025-05-02 주식회사 문성엠에스케이 반도체 전극(cathode)의 홀 형성 방법

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Also Published As

Publication number Publication date
US11332827B2 (en) 2022-05-17
WO2020197684A1 (en) 2020-10-01
TWI832986B (zh) 2024-02-21
CN113508191B (zh) 2024-06-11
TW202039088A (zh) 2020-11-01
JP7781639B2 (ja) 2025-12-08
KR20210133302A (ko) 2021-11-05
US20220380898A1 (en) 2022-12-01
CN113508191A (zh) 2021-10-15
SG11202108874QA (en) 2021-10-28
JP2022527694A (ja) 2022-06-03
US20200308703A1 (en) 2020-10-01

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