JP2022522010A5 - - Google Patents

Info

Publication number
JP2022522010A5
JP2022522010A5 JP2021550179A JP2021550179A JP2022522010A5 JP 2022522010 A5 JP2022522010 A5 JP 2022522010A5 JP 2021550179 A JP2021550179 A JP 2021550179A JP 2021550179 A JP2021550179 A JP 2021550179A JP 2022522010 A5 JP2022522010 A5 JP 2022522010A5
Authority
JP
Japan
Prior art keywords
layer
charge carrier
barrier
directly applying
binder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021550179A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022522010A (ja
JP7528109B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2020/054995 external-priority patent/WO2020173985A1/en
Publication of JP2022522010A publication Critical patent/JP2022522010A/ja
Publication of JP2022522010A5 publication Critical patent/JP2022522010A5/ja
Application granted granted Critical
Publication of JP7528109B2 publication Critical patent/JP7528109B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021550179A 2019-02-27 2020-02-26 光検出のための光センサ及び検出器 Active JP7528109B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19159710 2019-02-27
EP19159710.3 2019-02-27
PCT/EP2020/054995 WO2020173985A1 (en) 2019-02-27 2020-02-26 Optical sensor and detector for an optical detection

Publications (3)

Publication Number Publication Date
JP2022522010A JP2022522010A (ja) 2022-04-13
JP2022522010A5 true JP2022522010A5 (enExample) 2023-02-22
JP7528109B2 JP7528109B2 (ja) 2024-08-05

Family

ID=65628668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021550179A Active JP7528109B2 (ja) 2019-02-27 2020-02-26 光検出のための光センサ及び検出器

Country Status (6)

Country Link
US (1) US11908956B2 (enExample)
EP (1) EP3931880A1 (enExample)
JP (1) JP7528109B2 (enExample)
KR (1) KR102714386B1 (enExample)
CN (1) CN113491016B (enExample)
WO (1) WO2020173985A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11504079B2 (en) 2016-11-30 2022-11-22 The Research Foundation For The State University Of New York Hybrid active matrix flat panel detector system and method
CN112436062B (zh) * 2020-12-01 2022-12-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法
CN116417535B (zh) * 2023-04-19 2024-11-15 云南师范大学 一种三端并联叠层双面光伏电池及其制备方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
JPS54154292A (en) * 1978-05-25 1979-12-05 Matsushita Electric Ind Co Ltd Photo detecting semiconductor device
JPS56133884A (en) 1980-03-24 1981-10-20 Hitachi Ltd Manufacture of photoelectric transducer
JPS6035830B2 (ja) 1981-01-26 1985-08-16 松下電子工業株式会社 固体撮像装置
JPS60241260A (ja) * 1984-05-16 1985-11-30 Toshiba Corp 固体撮像装置
JPH0394468A (ja) 1989-09-07 1991-04-19 Toshiba Corp 積層型固体撮像装置及びその製造方法
JPH03241260A (ja) 1990-02-16 1991-10-28 Matsushita Refrig Co Ltd 多室型空気調和機
JPH07169931A (ja) * 1993-12-16 1995-07-04 Hitachi Ltd 半導体装置及びその製造方法
JP2000101105A (ja) 1998-09-18 2000-04-07 Mitsubishi Cable Ind Ltd 光導電素子
KR101389808B1 (ko) * 2005-11-18 2014-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전변환장치
JP2007165865A (ja) 2005-11-18 2007-06-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2008109110A (ja) * 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
US7791012B2 (en) 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
WO2012110924A1 (en) 2011-02-15 2012-08-23 Basf Se Detector for optically detecting at least one object
JP6046377B2 (ja) 2011-08-09 2016-12-14 ローム株式会社 光検出素子、光検出装置およびオートライト装置
KR102088685B1 (ko) 2012-12-19 2020-03-13 바스프 에스이 적어도 하나의 물체를 광학적으로 검출하기 위한 검출기
JP2014241260A (ja) 2013-06-12 2014-12-25 日産自動車株式会社 燃料電池システム
FI20135967A7 (fi) 2013-09-27 2015-03-28 Lumichip Oy Asennustason monitoiminen kapselointikerros ja menetelmä sen valmistamiseksi
US10775505B2 (en) 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object
WO2016169871A1 (en) * 2015-04-22 2016-10-27 Trinamix Gmbh Detector for an optical detection of at least one object
US11211513B2 (en) 2016-07-29 2021-12-28 Trinamix Gmbh Optical sensor and detector for an optical detection
EP3532796B1 (en) * 2016-10-25 2026-04-15 trinamiX GmbH Infrared optical detector with integrated filter
JP7080059B2 (ja) 2018-01-11 2022-06-03 池上通信機株式会社 放送用モニタのムラ検出装置及び当該装置を用いたムラ補正システム
EP3912197A1 (en) 2019-01-18 2021-11-24 trinamiX GmbH Optical sensor and detector for an optical detection

Similar Documents

Publication Publication Date Title
CN105322104B (zh) Oled显示面板的封装方法
JP2010267899A5 (enExample)
JP2004503066A5 (enExample)
CN106328827B (zh) 一种薄膜封装方法
JP2012109566A5 (enExample)
JP2006512744A (ja) 低圧冷間溶接によるデバイス製造方法
JP2008547195A5 (enExample)
JPS6432663A (en) Multilayer interconnection system for multi-chip high performance semiconductor package
JP2013069808A5 (enExample)
JP2014146793A5 (enExample)
JP2003017375A5 (enExample)
JP2005506704A5 (enExample)
JP2005536602A5 (enExample)
WO2014153892A1 (zh) 基板封装方法
WO2005101524A3 (en) Method of fabricating an optoelectronic device having a bulk heterojunction
JP2000133809A5 (enExample)
JP2005159333A5 (enExample)
JP2009117688A5 (enExample)
JP2003234486A5 (enExample)
JP2013516764A5 (enExample)
CN103794738A (zh) 制造有机发光二极管显示器的方法
JPWO2023032718A5 (enExample)
JP2013534706A5 (enExample)
WO2013040452A3 (en) Macro-structured high surface area transparent conductive oxide electrodes
JP2009524231A5 (enExample)