KR102714386B1 - 광학 검출용 광학 센서 및 검출기 - Google Patents

광학 검출용 광학 센서 및 검출기 Download PDF

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Publication number
KR102714386B1
KR102714386B1 KR1020217029999A KR20217029999A KR102714386B1 KR 102714386 B1 KR102714386 B1 KR 102714386B1 KR 1020217029999 A KR1020217029999 A KR 1020217029999A KR 20217029999 A KR20217029999 A KR 20217029999A KR 102714386 B1 KR102714386 B1 KR 102714386B1
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South Korea
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layer
electrode layer
electrode
optical sensor
segment
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Korean (ko)
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KR20210129144A (ko
Inventor
윌프리드 헤르메스
세바스티안 발로우치
세바스티안 뮬러
레지나 호이
하이디 베치텔
티모 알텐벡
파비안 디트만
베르트람 포이어슈타인
토마스 후파우어
앙케 한드레크
로베르트 구스트
피터 파울 칼레타
다니엘 카엘블라인
로베르트 센트
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트리나미엑스 게엠베하
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Classifications

    • H01L31/02005
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/93Interconnections
    • H10F77/933Interconnections for devices having potential barriers
    • H01L31/0203
    • H01L31/022408
    • H01L31/0324
    • H01L31/09
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/127Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
KR1020217029999A 2019-02-27 2020-02-26 광학 검출용 광학 센서 및 검출기 Active KR102714386B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19159710 2019-02-27
EP19159710.3 2019-02-27
PCT/EP2020/054995 WO2020173985A1 (en) 2019-02-27 2020-02-26 Optical sensor and detector for an optical detection

Publications (2)

Publication Number Publication Date
KR20210129144A KR20210129144A (ko) 2021-10-27
KR102714386B1 true KR102714386B1 (ko) 2024-10-11

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KR1020217029999A Active KR102714386B1 (ko) 2019-02-27 2020-02-26 광학 검출용 광학 센서 및 검출기

Country Status (6)

Country Link
US (1) US11908956B2 (enExample)
EP (1) EP3931880A1 (enExample)
JP (1) JP7528109B2 (enExample)
KR (1) KR102714386B1 (enExample)
CN (1) CN113491016B (enExample)
WO (1) WO2020173985A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2017367615B9 (en) 2016-11-30 2022-06-16 The Research Foundation For The State University Of New York Hybrid active matrix flat panel detector system and method
CN112436062B (zh) * 2020-12-01 2022-12-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法
CN116417535B (zh) * 2023-04-19 2024-11-15 云南师范大学 一种三端并联叠层双面光伏电池及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070113886A1 (en) 2005-11-18 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
WO2018019921A1 (en) * 2016-07-29 2018-02-01 Trinamix Gmbh Optical sensor and detector for optical detection

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US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
JPS54154292A (en) * 1978-05-25 1979-12-05 Matsushita Electric Ind Co Ltd Photo detecting semiconductor device
JPS56133884A (en) * 1980-03-24 1981-10-20 Hitachi Ltd Manufacture of photoelectric transducer
JPS6035830B2 (ja) * 1981-01-26 1985-08-16 松下電子工業株式会社 固体撮像装置
JPS60241260A (ja) * 1984-05-16 1985-11-30 Toshiba Corp 固体撮像装置
JPH0394468A (ja) * 1989-09-07 1991-04-19 Toshiba Corp 積層型固体撮像装置及びその製造方法
JPH03241260A (ja) 1990-02-16 1991-10-28 Matsushita Refrig Co Ltd 多室型空気調和機
JPH07169931A (ja) * 1993-12-16 1995-07-04 Hitachi Ltd 半導体装置及びその製造方法
JP2000101105A (ja) 1998-09-18 2000-04-07 Mitsubishi Cable Ind Ltd 光導電素子
JP2007165865A (ja) 2005-11-18 2007-06-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2008109110A (ja) * 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
US7791012B2 (en) 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
EP2676102B1 (en) 2011-02-15 2016-04-20 Basf Se Detector for optically detecting at least one object
JP6046377B2 (ja) 2011-08-09 2016-12-14 ローム株式会社 光検出素子、光検出装置およびオートライト装置
AU2013365772B2 (en) 2012-12-19 2017-08-10 Basf Se Detector for optically detecting at least one object
JP2014241260A (ja) 2013-06-12 2014-12-25 日産自動車株式会社 燃料電池システム
FI20135967L (fi) 2013-09-27 2015-03-28 Lumichip Oy Asennustason monitoiminen kapselointikerros ja menetelmä sen valmistamiseksi
US10775505B2 (en) 2015-01-30 2020-09-15 Trinamix Gmbh Detector for an optical detection of at least one object
WO2016169871A1 (en) * 2015-04-22 2016-10-27 Trinamix Gmbh Detector for an optical detection of at least one object
WO2018077870A1 (en) * 2016-10-25 2018-05-03 Trinamix Gmbh Nfrared optical detector with integrated filter
JP7080059B2 (ja) 2018-01-11 2022-06-03 池上通信機株式会社 放送用モニタのムラ検出装置及び当該装置を用いたムラ補正システム
EP3912197A1 (en) 2019-01-18 2021-11-24 trinamiX GmbH Optical sensor and detector for an optical detection

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070113886A1 (en) 2005-11-18 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
WO2018019921A1 (en) * 2016-07-29 2018-02-01 Trinamix Gmbh Optical sensor and detector for optical detection

Also Published As

Publication number Publication date
JP7528109B2 (ja) 2024-08-05
US11908956B2 (en) 2024-02-20
US20220140155A1 (en) 2022-05-05
JP2022522010A (ja) 2022-04-13
CN113491016B (zh) 2025-10-17
CN113491016A (zh) 2021-10-08
WO2020173985A1 (en) 2020-09-03
KR20210129144A (ko) 2021-10-27
EP3931880A1 (en) 2022-01-05

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