JP7528109B2 - 光検出のための光センサ及び検出器 - Google Patents

光検出のための光センサ及び検出器 Download PDF

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JP7528109B2
JP7528109B2 JP2021550179A JP2021550179A JP7528109B2 JP 7528109 B2 JP7528109 B2 JP 7528109B2 JP 2021550179 A JP2021550179 A JP 2021550179A JP 2021550179 A JP2021550179 A JP 2021550179A JP 7528109 B2 JP7528109 B2 JP 7528109B2
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electrode layer
electrode
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JPWO2020173985A5 (enExample
JP2022522010A (ja
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ヘルメス，ヴィルフリート
ファローフ，ゼバスティアン
ミュラー，ゼバスティアン
ヘー，レギーナ
ベヒテル，ハイディ
アルテンベック，ティモ
ディットマン，ファビアン
フォイアーシュタイン，ベルトラム
フプファウアー，トマス
ハンドレック，アンケ
グスト，ロベルト
パウル カレッタ，ペーター
ケルブライン，ダニエル
ゼント，ロベルト
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トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2021550179A 2019-02-27 2020-02-26 光検出のための光センサ及び検出器 Active JP7528109B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19159710 2019-02-27
EP19159710.3 2019-02-27
PCT/EP2020/054995 WO2020173985A1 (en) 2019-02-27 2020-02-26 Optical sensor and detector for an optical detection

Publications (3)

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JP2022522010A JP2022522010A (ja) 2022-04-13
JPWO2020173985A5 JPWO2020173985A5 (enExample) 2023-02-22
JP7528109B2 true JP7528109B2 (ja) 2024-08-05

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JP2021550179A Active JP7528109B2 (ja) 2019-02-27 2020-02-26 光検出のための光センサ及び検出器

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US (1) US11908956B2 (enExample)
EP (1) EP3931880A1 (enExample)
JP (1) JP7528109B2 (enExample)
KR (1) KR102714386B1 (enExample)
CN (1) CN113491016B (enExample)
WO (1) WO2020173985A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3549168A4 (en) 2016-11-30 2020-09-16 The Research Foundation for The State University of New York HYBRID ACTIVE MATRIX FLAT PANEL DETECTION SYSTEM AND METHOD
CN112436062B (zh) * 2020-12-01 2022-12-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法
CN116417535B (zh) * 2023-04-19 2024-11-15 云南师范大学 一种三端并联叠层双面光伏电池及其制备方法

Citations (6)

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JP2000101105A (ja) 1998-09-18 2000-04-07 Mitsubishi Cable Ind Ltd 光導電素子
JP2007165865A (ja) 2005-11-18 2007-06-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2008109110A (ja) 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013055325A (ja) 2011-08-09 2013-03-21 Rohm Co Ltd 光検出素子、光検出装置およびオートライト装置
WO2015044529A1 (en) 2013-09-27 2015-04-02 Lumichip Oy Assembly level encapsulation layer with multifunctional purpose, and method of producing the same
WO2018019921A1 (en) 2016-07-29 2018-02-01 Trinamix Gmbh Optical sensor and detector for optical detection

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US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
JPS54154292A (en) * 1978-05-25 1979-12-05 Matsushita Electric Ind Co Ltd Photo detecting semiconductor device
JPS56133884A (en) 1980-03-24 1981-10-20 Hitachi Ltd Manufacture of photoelectric transducer
JPS6035830B2 (ja) * 1981-01-26 1985-08-16 松下電子工業株式会社 固体撮像装置
JPS60241260A (ja) * 1984-05-16 1985-11-30 Toshiba Corp 固体撮像装置
JPH0394468A (ja) 1989-09-07 1991-04-19 Toshiba Corp 積層型固体撮像装置及びその製造方法
JPH03241260A (ja) 1990-02-16 1991-10-28 Matsushita Refrig Co Ltd 多室型空気調和機
JPH07169931A (ja) * 1993-12-16 1995-07-04 Hitachi Ltd 半導体装置及びその製造方法
WO2007058183A1 (en) 2005-11-18 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US7791012B2 (en) 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
JP2009010075A (ja) * 2007-06-27 2009-01-15 Fujifilm Corp 放射線画像検出器
EP2676102B1 (en) 2011-02-15 2016-04-20 Basf Se Detector for optically detecting at least one object
AU2013365772B2 (en) 2012-12-19 2017-08-10 Basf Se Detector for optically detecting at least one object
JP2014241260A (ja) 2013-06-12 2014-12-25 日産自動車株式会社 燃料電池システム
CN107438775B (zh) 2015-01-30 2022-01-21 特里纳米克斯股份有限公司 用于至少一个对象的光学检测的检测器
CN107533126A (zh) * 2015-04-22 2018-01-02 特里纳米克斯股份有限公司 用于至少一个对象的光学检测的检测器
JP2019532517A (ja) * 2016-10-25 2019-11-07 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光学的に検出するための光検出器
JP7080059B2 (ja) 2018-01-11 2022-06-03 池上通信機株式会社 放送用モニタのムラ検出装置及び当該装置を用いたムラ補正システム
US12199209B2 (en) 2019-01-18 2025-01-14 Trinamix Gmbh Optical sensor and detector for an optical detection

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000101105A (ja) 1998-09-18 2000-04-07 Mitsubishi Cable Ind Ltd 光導電素子
JP2007165865A (ja) 2005-11-18 2007-06-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2008109110A (ja) 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013055325A (ja) 2011-08-09 2013-03-21 Rohm Co Ltd 光検出素子、光検出装置およびオートライト装置
WO2015044529A1 (en) 2013-09-27 2015-04-02 Lumichip Oy Assembly level encapsulation layer with multifunctional purpose, and method of producing the same
WO2018019921A1 (en) 2016-07-29 2018-02-01 Trinamix Gmbh Optical sensor and detector for optical detection

Also Published As

Publication number Publication date
CN113491016A (zh) 2021-10-08
KR102714386B1 (ko) 2024-10-11
JP2022522010A (ja) 2022-04-13
KR20210129144A (ko) 2021-10-27
CN113491016B (zh) 2025-10-17
US11908956B2 (en) 2024-02-20
WO2020173985A1 (en) 2020-09-03
EP3931880A1 (en) 2022-01-05
US20220140155A1 (en) 2022-05-05

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