JP2000133809A5 - - Google Patents

Download PDF

Info

Publication number
JP2000133809A5
JP2000133809A5 JP1998305884A JP30588498A JP2000133809A5 JP 2000133809 A5 JP2000133809 A5 JP 2000133809A5 JP 1998305884 A JP1998305884 A JP 1998305884A JP 30588498 A JP30588498 A JP 30588498A JP 2000133809 A5 JP2000133809 A5 JP 2000133809A5
Authority
JP
Japan
Prior art keywords
layer
separation layer
transfer
substrate
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998305884A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000133809A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10305884A priority Critical patent/JP2000133809A/ja
Priority claimed from JP10305884A external-priority patent/JP2000133809A/ja
Publication of JP2000133809A publication Critical patent/JP2000133809A/ja
Publication of JP2000133809A5 publication Critical patent/JP2000133809A5/ja
Pending legal-status Critical Current

Links

JP10305884A 1998-10-27 1998-10-27 剥離方法 Pending JP2000133809A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10305884A JP2000133809A (ja) 1998-10-27 1998-10-27 剥離方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10305884A JP2000133809A (ja) 1998-10-27 1998-10-27 剥離方法

Publications (2)

Publication Number Publication Date
JP2000133809A JP2000133809A (ja) 2000-05-12
JP2000133809A5 true JP2000133809A5 (enExample) 2004-11-11

Family

ID=17950483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10305884A Pending JP2000133809A (ja) 1998-10-27 1998-10-27 剥離方法

Country Status (1)

Country Link
JP (1) JP2000133809A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100338805C (zh) * 2001-01-19 2007-09-19 松下电器产业株式会社 燃料电池用电解质膜-电极接合体的制造方法
TW487958B (en) * 2001-06-07 2002-05-21 Ind Tech Res Inst Manufacturing method of thin film transistor panel
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US6814832B2 (en) 2001-07-24 2004-11-09 Seiko Epson Corporation Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance
EP1455394B1 (en) 2001-07-24 2018-04-11 Samsung Electronics Co., Ltd. Transfer method
JP4151420B2 (ja) 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
JP2004349513A (ja) 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
JP3897173B2 (ja) 2003-05-23 2007-03-22 セイコーエプソン株式会社 有機el表示装置及びその製造方法
JP2004349540A (ja) 2003-05-23 2004-12-09 Seiko Epson Corp 薄膜装置の製造方法、電気光学装置、及び電子機器
JP4495939B2 (ja) * 2003-10-08 2010-07-07 株式会社リコー 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、電気光学装置の製造方法
JP2006049800A (ja) 2004-03-10 2006-02-16 Seiko Epson Corp 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器
JP2006120726A (ja) 2004-10-19 2006-05-11 Seiko Epson Corp 薄膜装置の製造方法、電気光学装置、及び電子機器
JP2007004205A (ja) * 2006-09-19 2007-01-11 Seiko Epson Corp 電気光学装置の製造方法、及び電気光学装置
KR102649238B1 (ko) 2016-10-26 2024-03-21 삼성디스플레이 주식회사 표시패널, 이를 포함하는 적층 기판, 및 표시패널 제조방법
TW202236925A (zh) * 2021-01-15 2022-09-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
KR20260033366A (ko) * 2024-09-02 2026-03-10 도레이첨단소재 주식회사 리사이클링 이형필름 및 이를 포함하는 소자

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
JP4619461B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法

Similar Documents

Publication Publication Date Title
JPH10125930A5 (enExample)
JP2003526463A5 (enExample)
JPH10125931A5 (enExample)
MY115477A (en) Process for producing semiconductor article
EP1744365A3 (en) Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
GB2338598B (en) Methods of crystalizing amorphous silicon layer and fabricating thin film transistors using the same
MY130168A (en) Semiconductor device and manufacturing method thereof
EP1383165A3 (en) Peeling method
WO2005038865A3 (en) Amorphous carbon layer to improve photoresist adhesion
AU1501200A (en) Thin films with light trapping
GB2434696A (en) Method of preparing opto-electronic device
JPH11307782A5 (enExample)
CA2336854A1 (en) Process for the region-wise transfer of the decorative layer of a transfer foil onto a sustrate and a transfer foil suitable therefor
JP2005513758A5 (enExample)
EP1585170A3 (en) Dicing die bonding film
EP0340474A3 (en) Method of making semiconductor device with different oxide film thickness
JPH11338286A5 (enExample)
JPH11150133A5 (enExample)
JP2005506915A5 (enExample)
JP2001294447A5 (enExample)
JP2000040812A5 (enExample)
JPH0249138U (enExample)
JPH1051005A5 (enExample)
JPS5666079A (en) Photo semiconductor device
JPS6369141U (enExample)