JP2001044463A5 - - Google Patents

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Publication number
JP2001044463A5
JP2001044463A5 JP1999212287A JP21228799A JP2001044463A5 JP 2001044463 A5 JP2001044463 A5 JP 2001044463A5 JP 1999212287 A JP1999212287 A JP 1999212287A JP 21228799 A JP21228799 A JP 21228799A JP 2001044463 A5 JP2001044463 A5 JP 2001044463A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
solar cell
electrode
negative electrode
positive electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP1999212287A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001044463A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11212287A priority Critical patent/JP2001044463A/ja
Priority claimed from JP11212287A external-priority patent/JP2001044463A/ja
Publication of JP2001044463A publication Critical patent/JP2001044463A/ja
Publication of JP2001044463A5 publication Critical patent/JP2001044463A5/ja
Abandoned legal-status Critical Current

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JP11212287A 1999-07-27 1999-07-27 太陽電池およびその製造方法 Abandoned JP2001044463A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11212287A JP2001044463A (ja) 1999-07-27 1999-07-27 太陽電池およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11212287A JP2001044463A (ja) 1999-07-27 1999-07-27 太陽電池およびその製造方法

Publications (2)

Publication Number Publication Date
JP2001044463A JP2001044463A (ja) 2001-02-16
JP2001044463A5 true JP2001044463A5 (enExample) 2007-03-08

Family

ID=16620109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11212287A Abandoned JP2001044463A (ja) 1999-07-27 1999-07-27 太陽電池およびその製造方法

Country Status (1)

Country Link
JP (1) JP2001044463A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128438A (ja) * 2002-08-01 2004-04-22 Sharp Corp 半導体デバイスおよびその製造方法
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
JP4656996B2 (ja) * 2005-04-21 2011-03-23 シャープ株式会社 太陽電池
JP5103038B2 (ja) * 2007-03-14 2012-12-19 シャープ株式会社 光電変換素子、太陽電池モジュール、太陽光発電システム
WO2011149021A1 (ja) * 2010-05-28 2011-12-01 株式会社エバテック 光起電力素子の製造方法及び光起電力素子
CN102637767B (zh) * 2011-02-15 2015-03-18 上海凯世通半导体有限公司 太阳能电池的制作方法以及太阳能电池
US8486746B2 (en) * 2011-03-29 2013-07-16 Sunpower Corporation Thin silicon solar cell and method of manufacture
JP2014512699A (ja) * 2011-04-29 2014-05-22 アンバーウェーブ， インコーポレイテッド 薄膜はんだ接合

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4133698A (en) * 1977-12-27 1979-01-09 Texas Instruments Incorporated Tandem junction solar cell
US4234352A (en) * 1978-07-26 1980-11-18 Electric Power Research Institute, Inc. Thermophotovoltaic converter and cell for use therein
US4361717A (en) * 1980-12-05 1982-11-30 General Electric Company Fluid cooled solar powered photovoltaic cell
JPS57198621A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Liquid phase epitaxial growth
JPH077841B2 (ja) * 1986-03-28 1995-01-30 沖電気工業株式会社 化合物半導体太陽電池の製造方法
JPS62237768A (ja) * 1986-04-08 1987-10-17 Oki Electric Ind Co Ltd 化合物半導体太陽電池の製造方法
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
JPH02185021A (ja) * 1989-01-12 1990-07-19 Hoxan Corp 半導体基板上に多結晶シリコンを形成する方法
JPH02278739A (ja) * 1989-04-19 1990-11-15 Fujitsu Ltd エピタキシャル結晶の成長方法
US5053083A (en) * 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5356488A (en) * 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
JP3169497B2 (ja) * 1993-12-24 2001-05-28 三菱電機株式会社 太陽電池の製造方法
JPH08101320A (ja) * 1994-09-29 1996-04-16 Sony Corp 微小構造体およびその作製方法
JP3381443B2 (ja) * 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
JPH0918033A (ja) * 1995-06-27 1997-01-17 Daido Hoxan Inc 薄膜太陽電池およびその製法
JP3652055B2 (ja) * 1997-03-28 2005-05-25 京セラ株式会社 光電変換装置の製造方法

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