JPS5511365A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5511365A
JPS5511365A JP8435478A JP8435478A JPS5511365A JP S5511365 A JPS5511365 A JP S5511365A JP 8435478 A JP8435478 A JP 8435478A JP 8435478 A JP8435478 A JP 8435478A JP S5511365 A JPS5511365 A JP S5511365A
Authority
JP
Japan
Prior art keywords
film
range
recess
substrate
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8435478A
Other languages
Japanese (ja)
Inventor
Kunihiko Hirashima
Susumu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP8435478A priority Critical patent/JPS5511365A/en
Publication of JPS5511365A publication Critical patent/JPS5511365A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:For increasing a capacity section in capacitance without increasing the size of cell surface, to provide in a semiconductor substrate a recess contacting with a source and drain range and a source range through the medium of insulating film. CONSTITUTION:An N-type source range 3 and a drain range 4 are diffusedly formed on an P-type Si substrate 1, and SiO2 film 10 is formed on the whole surface of said substrate 1. Next, plasma etching is made by using the mask of photo resist film 11 to form a deep recess 12 in said substrate 1 with the side faces of said range 3 exposed. Thereafter, said film 11 is removed. SiO2 film 2 is deposited on the exposed surface of said recess 12 and combined with said film 10, said film 10 located between said ranges 3 and 4 is decreased in thickness into a thin film 5, and a gate electrode 6 is fitted on said film 5. Next, an opening is provided in said film 10, a drain electrode 7 is fitted to connect with said range 4, and a polycrystalline Si capacity section electrode 8 is buried in said recess 12. Thereafter, thick film SiO2 film 13 is formed between said electrodes 6, 7 and 8, and electrodes 6', 7' and 8' are made by increasing said electrodes 6, 7 and 8 in volume.
JP8435478A 1978-07-11 1978-07-11 Semiconductor memory Pending JPS5511365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8435478A JPS5511365A (en) 1978-07-11 1978-07-11 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8435478A JPS5511365A (en) 1978-07-11 1978-07-11 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS5511365A true JPS5511365A (en) 1980-01-26

Family

ID=13828171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8435478A Pending JPS5511365A (en) 1978-07-11 1978-07-11 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5511365A (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169362A (en) * 1987-01-09 1987-07-25 Agency Of Ind Science & Technol Capacitor device
US4721987A (en) * 1984-07-03 1988-01-26 Texas Instruments Incorporated Trench capacitor process for high density dynamic RAM
US4751557A (en) * 1982-03-10 1988-06-14 Hitachi, Ltd. Dram with FET stacked over capacitor
US4763180A (en) * 1986-12-22 1988-08-09 International Business Machines Corporation Method and structure for a high density VMOS dynamic ram array
JPH02354A (en) * 1989-02-08 1990-01-05 Hitachi Ltd Large scale semiconductor memory and its manufacture
JPH0295547U (en) * 1988-06-13 1990-07-30
US4978634A (en) * 1989-07-25 1990-12-18 Texas Instruments, Incorporated Method of making trench DRAM cell with stacked capacitor and buried lateral contact
US5013676A (en) * 1987-04-27 1991-05-07 Nec Corporation Structure of MIS-type field effect transistor and process of fabrication thereof
US5017506A (en) * 1989-07-25 1991-05-21 Texas Instruments Incorporated Method for fabricating a trench DRAM
US5057887A (en) * 1989-05-14 1991-10-15 Texas Instruments Incorporated High density dynamic ram cell
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US5170234A (en) * 1984-07-03 1992-12-08 Texas Instruments Incorporated High density dynamic RAM with trench capacitor
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US5273648A (en) * 1992-07-15 1993-12-28 Caiozza Joseph C Filter cartridge magnetic belt
US5354462A (en) * 1992-04-10 1994-10-11 Shane Marie Owen Magnetic filter strap
US5714063A (en) * 1996-05-28 1998-02-03 Brunsting; William J. Apparatus for the removal of ferrous particles from liquids

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751557A (en) * 1982-03-10 1988-06-14 Hitachi, Ltd. Dram with FET stacked over capacitor
US4721987A (en) * 1984-07-03 1988-01-26 Texas Instruments Incorporated Trench capacitor process for high density dynamic RAM
US5374580A (en) * 1984-07-03 1994-12-20 Texas Instruments Incorporated Method of forming high density DRAM having increased capacitance area due to trench etched into storage capacitor region
US5170234A (en) * 1984-07-03 1992-12-08 Texas Instruments Incorporated High density dynamic RAM with trench capacitor
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US4763180A (en) * 1986-12-22 1988-08-09 International Business Machines Corporation Method and structure for a high density VMOS dynamic ram array
JPS62169362A (en) * 1987-01-09 1987-07-25 Agency Of Ind Science & Technol Capacitor device
US5013676A (en) * 1987-04-27 1991-05-07 Nec Corporation Structure of MIS-type field effect transistor and process of fabrication thereof
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
JPH0295547U (en) * 1988-06-13 1990-07-30
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
JPH0426788B2 (en) * 1989-02-08 1992-05-08 Hitachi Ltd
JPH02354A (en) * 1989-02-08 1990-01-05 Hitachi Ltd Large scale semiconductor memory and its manufacture
US5057887A (en) * 1989-05-14 1991-10-15 Texas Instruments Incorporated High density dynamic ram cell
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors
US4978634A (en) * 1989-07-25 1990-12-18 Texas Instruments, Incorporated Method of making trench DRAM cell with stacked capacitor and buried lateral contact
US5017506A (en) * 1989-07-25 1991-05-21 Texas Instruments Incorporated Method for fabricating a trench DRAM
US5354462A (en) * 1992-04-10 1994-10-11 Shane Marie Owen Magnetic filter strap
US5273648A (en) * 1992-07-15 1993-12-28 Caiozza Joseph C Filter cartridge magnetic belt
US5714063A (en) * 1996-05-28 1998-02-03 Brunsting; William J. Apparatus for the removal of ferrous particles from liquids

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