JP2001044463A - 太陽電池およびその製造方法 - Google Patents
太陽電池およびその製造方法Info
- Publication number
- JP2001044463A JP2001044463A JP11212287A JP21228799A JP2001044463A JP 2001044463 A JP2001044463 A JP 2001044463A JP 11212287 A JP11212287 A JP 11212287A JP 21228799 A JP21228799 A JP 21228799A JP 2001044463 A JP2001044463 A JP 2001044463A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- solar cell
- electrode
- porous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11212287A JP2001044463A (ja) | 1999-07-27 | 1999-07-27 | 太陽電池およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11212287A JP2001044463A (ja) | 1999-07-27 | 1999-07-27 | 太陽電池およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001044463A true JP2001044463A (ja) | 2001-02-16 |
| JP2001044463A5 JP2001044463A5 (enExample) | 2007-03-08 |
Family
ID=16620109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11212287A Abandoned JP2001044463A (ja) | 1999-07-27 | 1999-07-27 | 太陽電池およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001044463A (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004128438A (ja) * | 2002-08-01 | 2004-04-22 | Sharp Corp | 半導体デバイスおよびその製造方法 |
| JP2006303230A (ja) * | 2005-04-21 | 2006-11-02 | Sharp Corp | 太陽電池 |
| JP2008519438A (ja) * | 2004-10-29 | 2008-06-05 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | バックコンタクト太陽電池 |
| JP2008227269A (ja) * | 2007-03-14 | 2008-09-25 | Sharp Corp | 光電変換素子、太陽電池モジュール、太陽光発電システム |
| WO2011149021A1 (ja) * | 2010-05-28 | 2011-12-01 | 株式会社エバテック | 光起電力素子の製造方法及び光起電力素子 |
| CN102637767A (zh) * | 2011-02-15 | 2012-08-15 | 上海凯世通半导体有限公司 | 太阳能电池的制作方法以及太阳能电池 |
| KR20140027172A (ko) * | 2011-03-29 | 2014-03-06 | 선파워 코포레이션 | 박형 규소 태양 전지 및 제조 방법 |
| JP2018078329A (ja) * | 2011-04-29 | 2018-05-17 | アンバーウェーブ, インコーポレイテッド | 薄膜はんだ接合 |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4133698A (en) * | 1977-12-27 | 1979-01-09 | Texas Instruments Incorporated | Tandem junction solar cell |
| US4234352A (en) * | 1978-07-26 | 1980-11-18 | Electric Power Research Institute, Inc. | Thermophotovoltaic converter and cell for use therein |
| US4361717A (en) * | 1980-12-05 | 1982-11-30 | General Electric Company | Fluid cooled solar powered photovoltaic cell |
| JPS57198621A (en) * | 1981-06-01 | 1982-12-06 | Fujitsu Ltd | Liquid phase epitaxial growth |
| JPS62226670A (ja) * | 1986-03-28 | 1987-10-05 | Oki Electric Ind Co Ltd | 化合物半導体太陽電池の製造方法 |
| JPS62237768A (ja) * | 1986-04-08 | 1987-10-17 | Oki Electric Ind Co Ltd | 化合物半導体太陽電池の製造方法 |
| JPS643096A (en) * | 1987-03-27 | 1989-01-06 | Canon Inc | Method for forming crystal |
| US4927770A (en) * | 1988-11-14 | 1990-05-22 | Electric Power Research Inst. Corp. Of District Of Columbia | Method of fabricating back surface point contact solar cells |
| JPH02185021A (ja) * | 1989-01-12 | 1990-07-19 | Hoxan Corp | 半導体基板上に多結晶シリコンを形成する方法 |
| JPH02278739A (ja) * | 1989-04-19 | 1990-11-15 | Fujitsu Ltd | エピタキシャル結晶の成長方法 |
| US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
| JPH0661515A (ja) * | 1991-12-27 | 1994-03-04 | Rudolf Hezel | 太陽電池及びその製造方法 |
| JPH07183552A (ja) * | 1993-12-24 | 1995-07-21 | Mitsubishi Electric Corp | 太陽電池の製造方法 |
| JPH08101320A (ja) * | 1994-09-29 | 1996-04-16 | Sony Corp | 微小構造体およびその作製方法 |
| JPH08213645A (ja) * | 1995-02-02 | 1996-08-20 | Sony Corp | 基体から素子形成層を分離する方法 |
| JPH0918033A (ja) * | 1995-06-27 | 1997-01-17 | Daido Hoxan Inc | 薄膜太陽電池およびその製法 |
| JPH10275922A (ja) * | 1997-03-28 | 1998-10-13 | Kyocera Corp | 光電変換装置 |
-
1999
- 1999-07-27 JP JP11212287A patent/JP2001044463A/ja not_active Abandoned
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4133698A (en) * | 1977-12-27 | 1979-01-09 | Texas Instruments Incorporated | Tandem junction solar cell |
| US4234352A (en) * | 1978-07-26 | 1980-11-18 | Electric Power Research Institute, Inc. | Thermophotovoltaic converter and cell for use therein |
| US4361717A (en) * | 1980-12-05 | 1982-11-30 | General Electric Company | Fluid cooled solar powered photovoltaic cell |
| JPS57198621A (en) * | 1981-06-01 | 1982-12-06 | Fujitsu Ltd | Liquid phase epitaxial growth |
| JPS62226670A (ja) * | 1986-03-28 | 1987-10-05 | Oki Electric Ind Co Ltd | 化合物半導体太陽電池の製造方法 |
| JPS62237768A (ja) * | 1986-04-08 | 1987-10-17 | Oki Electric Ind Co Ltd | 化合物半導体太陽電池の製造方法 |
| JPS643096A (en) * | 1987-03-27 | 1989-01-06 | Canon Inc | Method for forming crystal |
| US4927770A (en) * | 1988-11-14 | 1990-05-22 | Electric Power Research Inst. Corp. Of District Of Columbia | Method of fabricating back surface point contact solar cells |
| JPH02185021A (ja) * | 1989-01-12 | 1990-07-19 | Hoxan Corp | 半導体基板上に多結晶シリコンを形成する方法 |
| JPH02278739A (ja) * | 1989-04-19 | 1990-11-15 | Fujitsu Ltd | エピタキシャル結晶の成長方法 |
| US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
| JPH0661515A (ja) * | 1991-12-27 | 1994-03-04 | Rudolf Hezel | 太陽電池及びその製造方法 |
| JPH07183552A (ja) * | 1993-12-24 | 1995-07-21 | Mitsubishi Electric Corp | 太陽電池の製造方法 |
| JPH08101320A (ja) * | 1994-09-29 | 1996-04-16 | Sony Corp | 微小構造体およびその作製方法 |
| JPH08213645A (ja) * | 1995-02-02 | 1996-08-20 | Sony Corp | 基体から素子形成層を分離する方法 |
| JPH0918033A (ja) * | 1995-06-27 | 1997-01-17 | Daido Hoxan Inc | 薄膜太陽電池およびその製法 |
| JPH10275922A (ja) * | 1997-03-28 | 1998-10-13 | Kyocera Corp | 光電変換装置 |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004128438A (ja) * | 2002-08-01 | 2004-04-22 | Sharp Corp | 半導体デバイスおよびその製造方法 |
| JP2008519438A (ja) * | 2004-10-29 | 2008-06-05 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | バックコンタクト太陽電池 |
| JP2006303230A (ja) * | 2005-04-21 | 2006-11-02 | Sharp Corp | 太陽電池 |
| JP2008227269A (ja) * | 2007-03-14 | 2008-09-25 | Sharp Corp | 光電変換素子、太陽電池モジュール、太陽光発電システム |
| WO2011149021A1 (ja) * | 2010-05-28 | 2011-12-01 | 株式会社エバテック | 光起電力素子の製造方法及び光起電力素子 |
| CN102637767A (zh) * | 2011-02-15 | 2012-08-15 | 上海凯世通半导体有限公司 | 太阳能电池的制作方法以及太阳能电池 |
| KR20140027172A (ko) * | 2011-03-29 | 2014-03-06 | 선파워 코포레이션 | 박형 규소 태양 전지 및 제조 방법 |
| JP2014509795A (ja) * | 2011-03-29 | 2014-04-21 | サンパワー コーポレイション | 薄型シリコン太陽電池及び製造方法 |
| KR101912482B1 (ko) | 2011-03-29 | 2018-10-26 | 선파워 코포레이션 | 박형 규소 태양 전지 및 제조 방법 |
| JP2018078329A (ja) * | 2011-04-29 | 2018-05-17 | アンバーウェーブ, インコーポレイテッド | 薄膜はんだ接合 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040113 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070118 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070315 |
|
| A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20070418 |