JP2000133809A - 剥離方法 - Google Patents

剥離方法

Info

Publication number
JP2000133809A
JP2000133809A JP10305884A JP30588498A JP2000133809A JP 2000133809 A JP2000133809 A JP 2000133809A JP 10305884 A JP10305884 A JP 10305884A JP 30588498 A JP30588498 A JP 30588498A JP 2000133809 A JP2000133809 A JP 2000133809A
Authority
JP
Japan
Prior art keywords
layer
separation layer
separation
substrate
irradiation light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10305884A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000133809A5 (enExample
Inventor
Sumio Utsunomiya
純夫 宇都宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP10305884A priority Critical patent/JP2000133809A/ja
Publication of JP2000133809A publication Critical patent/JP2000133809A/ja
Publication of JP2000133809A5 publication Critical patent/JP2000133809A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

Landscapes

  • Thin Film Transistor (AREA)
JP10305884A 1998-10-27 1998-10-27 剥離方法 Pending JP2000133809A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10305884A JP2000133809A (ja) 1998-10-27 1998-10-27 剥離方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10305884A JP2000133809A (ja) 1998-10-27 1998-10-27 剥離方法

Publications (2)

Publication Number Publication Date
JP2000133809A true JP2000133809A (ja) 2000-05-12
JP2000133809A5 JP2000133809A5 (enExample) 2004-11-11

Family

ID=17950483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10305884A Pending JP2000133809A (ja) 1998-10-27 1998-10-27 剥離方法

Country Status (1)

Country Link
JP (1) JP2000133809A (enExample)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002058178A1 (en) * 2001-01-19 2002-07-25 Matsushita Electric Industrial Co., Ltd. Method for manufacturing fuel cell elecrolyte film-electrode bond
US6814832B2 (en) 2001-07-24 2004-11-09 Seiko Epson Corporation Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance
JP2005115086A (ja) * 2003-10-08 2005-04-28 Ricoh Co Ltd 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、電気光学装置の製造方法、薄膜デバイス装置、アクティブマトリクス基板及び電気光学装置
US6887650B2 (en) 2001-07-24 2005-05-03 Seiko Epson Corporation Transfer method, method of manufacturing thin film devices, method of manufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, ic card, and electronic appliance
US7029960B2 (en) 2003-01-23 2006-04-18 Seiko Epson Corporation Device manufacturing method
US7105422B2 (en) 2003-05-22 2006-09-12 Seiko Epson Corporation Thin film circuit device, manufacturing method thereof, electro-optical apparatus, and electronic system
CN1294618C (zh) * 2001-07-16 2007-01-10 株式会社半导体能源研究所 半导体器件及剥离方法以及半导体器件的制造方法
JP2007004205A (ja) * 2006-09-19 2007-01-11 Seiko Epson Corp 電気光学装置の製造方法、及び電気光学装置
US7253087B2 (en) 2003-05-23 2007-08-07 Seiko Epson Corporation Method of producing thin-film device, electro-optical device, and electronic apparatus
US7262088B2 (en) 2004-03-10 2007-08-28 Seiko Epson Corporation Thin film device supply body, method of fabricating thin film device, method of transfer, method of fabricating semiconductor device, and electronic equipment
JP2008042218A (ja) * 2001-06-07 2008-02-21 Ind Technol Res Inst 薄膜トランジスタパネルの製造方法
US7342354B2 (en) 2003-05-23 2008-03-11 Seiko Epson Corporation Organic EL display device, electronic equipment, and method for manufacturing the same
US7393725B2 (en) 2004-10-19 2008-07-01 Seiko Epson Corporation Method of manufacturing thin film device electro-optic device, and electronic instrument
US12453240B2 (en) 2016-10-26 2025-10-21 Samsung Display Co., Ltd. Display panel, stacked substrate including the same, and method of manufacturing the display panel
WO2026049179A1 (ko) * 2024-09-02 2026-03-05 도레이첨단소재 주식회사 리사이클링 이형필름 및 이를 포함하는 소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125931A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 薄膜素子の転写方法,薄膜素子,薄膜集積回路装置,アクティブマトリクス基板および液晶表示装置
JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JPH10125930A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125931A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 薄膜素子の転写方法,薄膜素子,薄膜集積回路装置,アクティブマトリクス基板および液晶表示装置
JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JPH10125930A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100338805C (zh) * 2001-01-19 2007-09-19 松下电器产业株式会社 燃料电池用电解质膜-电极接合体的制造方法
USRE41651E1 (en) * 2001-01-19 2010-09-07 Panasonic Corporation Method for manufacturing fuel cell electrolyte film-electrode bond
US6977234B2 (en) 2001-01-19 2005-12-20 Matsushita Electric Industrial Co., Ltd. Method for manufacturing fuel cell electrolyte film-electrode bond
EP1278260A4 (en) * 2001-01-19 2007-08-01 Matsushita Electric Industrial Co Ltd METHOD FOR MANUFACTURING ELECTROLYTIC FILM-ELECTRODE LINK OF FUEL CELL
WO2002058178A1 (en) * 2001-01-19 2002-07-25 Matsushita Electric Industrial Co., Ltd. Method for manufacturing fuel cell elecrolyte film-electrode bond
JP2008042218A (ja) * 2001-06-07 2008-02-21 Ind Technol Res Inst 薄膜トランジスタパネルの製造方法
CN1294618C (zh) * 2001-07-16 2007-01-10 株式会社半导体能源研究所 半导体器件及剥离方法以及半导体器件的制造方法
US6814832B2 (en) 2001-07-24 2004-11-09 Seiko Epson Corporation Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance
US6887650B2 (en) 2001-07-24 2005-05-03 Seiko Epson Corporation Transfer method, method of manufacturing thin film devices, method of manufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, ic card, and electronic appliance
US7029960B2 (en) 2003-01-23 2006-04-18 Seiko Epson Corporation Device manufacturing method
US7408207B2 (en) 2003-01-23 2008-08-05 Seiko Epson Corporation Device manufacturing method and device, electro-optic device, and electronic equipment
US7105422B2 (en) 2003-05-22 2006-09-12 Seiko Epson Corporation Thin film circuit device, manufacturing method thereof, electro-optical apparatus, and electronic system
US7253087B2 (en) 2003-05-23 2007-08-07 Seiko Epson Corporation Method of producing thin-film device, electro-optical device, and electronic apparatus
US7342354B2 (en) 2003-05-23 2008-03-11 Seiko Epson Corporation Organic EL display device, electronic equipment, and method for manufacturing the same
JP2005115086A (ja) * 2003-10-08 2005-04-28 Ricoh Co Ltd 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、電気光学装置の製造方法、薄膜デバイス装置、アクティブマトリクス基板及び電気光学装置
US7262088B2 (en) 2004-03-10 2007-08-28 Seiko Epson Corporation Thin film device supply body, method of fabricating thin film device, method of transfer, method of fabricating semiconductor device, and electronic equipment
US7456059B2 (en) 2004-03-10 2008-11-25 Seiko Epson Corporation Thin film device supply body, method of fabricating thin film device, method of transfer, method of fabricating semiconductor device, and electronic equipment
US7393725B2 (en) 2004-10-19 2008-07-01 Seiko Epson Corporation Method of manufacturing thin film device electro-optic device, and electronic instrument
JP2007004205A (ja) * 2006-09-19 2007-01-11 Seiko Epson Corp 電気光学装置の製造方法、及び電気光学装置
US12453240B2 (en) 2016-10-26 2025-10-21 Samsung Display Co., Ltd. Display panel, stacked substrate including the same, and method of manufacturing the display panel
WO2026049179A1 (ko) * 2024-09-02 2026-03-05 도레이첨단소재 주식회사 리사이클링 이형필름 및 이를 포함하는 소자

Similar Documents

Publication Publication Date Title
KR100494479B1 (ko) 액티브 매트릭스 기판의 제조 방법
JP3809712B2 (ja) 薄膜デバイスの転写方法
JP3809733B2 (ja) 薄膜トランジスタの剥離方法
US6818530B2 (en) Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
TWI316753B (en) Semiconductor device and manufacturing method thereof
KR100787901B1 (ko) 박막 디바이스 공급체, 박막 디바이스 공급체의 제조 방법, 전사 방법 및 반도체 장치의 제조 방법
JP4619462B2 (ja) 薄膜素子の転写方法
JP4151421B2 (ja) デバイスの製造方法
JP2000133809A (ja) 剥離方法
JPH1124106A (ja) 液晶パネル用基板及び液晶パネル並びにそれらの製造方法
JP2001189460A (ja) 薄膜デバイスの転写・製造方法
JP3809710B2 (ja) 薄膜素子の転写方法
JP3849683B2 (ja) 薄膜トランジスタの剥離方法
JP4619644B2 (ja) 薄膜素子の転写方法
JP4525603B2 (ja) 薄膜トランジスタの転写方法
JP2005085830A (ja) 薄膜デバイスの製造方法および薄膜デバイス
JP2679676B2 (ja) Soi基板の製造方法および半導体装置の製造方法
JP4619645B2 (ja) 薄膜素子の転写方法
JP3809833B2 (ja) 薄膜素子の転写方法
JP2011187502A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20041101

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070116

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070319

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070417