|
US5338698A
(en)
*
|
1992-12-18 |
1994-08-16 |
International Business Machines Corporation |
Method of fabricating an ultra-short channel field effect transistor
|
|
JP2684979B2
(ja)
*
|
1993-12-22 |
1997-12-03 |
日本電気株式会社 |
半導体集積回路装置及びその製造方法
|
|
JP2002523899A
(ja)
*
|
1998-08-25 |
2002-07-30 |
マイクロン・テクノロジー・インコーポレーテッド |
特異化された多数のプラグのアラインメント許容度を改善する方法及び構造
|
|
JP4565700B2
(ja)
*
|
1999-05-12 |
2010-10-20 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
|
JP3519662B2
(ja)
*
|
2000-03-14 |
2004-04-19 |
松下電器産業株式会社 |
半導体装置及びその製造方法
|
|
SG115742A1
(en)
*
|
2004-04-05 |
2005-10-28 |
Taiwan Semiconductor Mfg |
Sram device having high aspect ratio cell boundary
|
|
US8288813B2
(en)
*
|
2004-08-13 |
2012-10-16 |
Infineon Technologies Ag |
Integrated memory device having columns having multiple bit lines
|
|
JP2006165480A
(ja)
*
|
2004-12-10 |
2006-06-22 |
Toshiba Corp |
半導体装置
|
|
JP2007103862A
(ja)
|
2005-10-07 |
2007-04-19 |
Renesas Technology Corp |
半導体装置およびその製造方法
|
|
WO2009095998A1
(ja)
*
|
2008-01-29 |
2009-08-06 |
Unisantis Electronics (Japan) Ltd. |
半導体記憶装置
|
|
KR101567024B1
(ko)
*
|
2009-05-15 |
2015-11-09 |
삼성전자주식회사 |
반도체 기억 소자
|
|
JP5746167B2
(ja)
*
|
2009-07-30 |
2015-07-08 |
クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ |
システムインパッケージ
|
|
KR101746246B1
(ko)
*
|
2009-09-30 |
2017-06-12 |
엠아이이 후지쯔 세미컨덕터 리미티드 |
전자 장치 및 시스템과, 그 제조 및 사용 방법
|
|
US8273617B2
(en)
*
|
2009-09-30 |
2012-09-25 |
Suvolta, Inc. |
Electronic devices and systems, and methods for making and using the same
|
|
US8436404B2
(en)
*
|
2009-12-30 |
2013-05-07 |
Intel Corporation |
Self-aligned contacts
|
|
US9875788B2
(en)
*
|
2010-03-25 |
2018-01-23 |
Qualcomm Incorporated |
Low-power 5T SRAM with improved stability and reduced bitcell size
|
|
KR101914798B1
(ko)
|
2010-07-20 |
2018-11-02 |
유니버시티 오브 버지니아 페이턴트 파운데이션 |
메모리 셀
|
|
US8455932B2
(en)
*
|
2011-05-06 |
2013-06-04 |
International Business Machines Corporation |
Local interconnect structure self-aligned to gate structure
|
|
US10181474B2
(en)
*
|
2011-09-19 |
2019-01-15 |
Texas Instruments Incorporated |
SRAM layout for double patterning
|
|
US9048136B2
(en)
*
|
2011-10-26 |
2015-06-02 |
GlobalFoundries, Inc. |
SRAM cell with individual electrical device threshold control
|
|
US9006841B2
(en)
*
|
2011-12-30 |
2015-04-14 |
Stmicroelectronics International N.V. |
Dual port SRAM having reduced cell size and rectangular shape
|
|
US9036404B2
(en)
*
|
2012-03-30 |
2015-05-19 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods and apparatus for SRAM cell structure
|
|
US20150325514A1
(en)
*
|
2014-05-09 |
2015-11-12 |
Qualcomm Incorporated |
High density sram array design with skipped, inter-layer conductive contacts
|
|
US9318564B2
(en)
*
|
2014-05-19 |
2016-04-19 |
Qualcomm Incorporated |
High density static random access memory array having advanced metal patterning
|
|
KR102310122B1
(ko)
*
|
2014-06-10 |
2021-10-08 |
삼성전자주식회사 |
논리 셀 및 이를 포함하는 집적회로 소자와 논리 셀의 제조 방법 및 집적회로 소자의 제조 방법
|
|
US9515077B1
(en)
*
|
2015-12-18 |
2016-12-06 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Layout of static random access memory cell
|
|
JP2017138918A
(ja)
|
2016-02-05 |
2017-08-10 |
ヤマハ株式会社 |
コンテンツ表示制御方法、プログラム、及びコンテンツ表示制御装置
|
|
US9646974B1
(en)
*
|
2016-03-25 |
2017-05-09 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Dual-port static random access memory
|
|
US10461086B2
(en)
*
|
2016-10-31 |
2019-10-29 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Memory cell structure
|
|
KR102343202B1
(ko)
*
|
2017-06-20 |
2021-12-23 |
삼성전자주식회사 |
반도체 장치 및 이의 제조 방법
|
|
US10867864B2
(en)
*
|
2018-09-27 |
2020-12-15 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor device and method of manufacture
|
|
US10763863B2
(en)
*
|
2018-09-28 |
2020-09-01 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor device for logic and memory co-optimization
|
|
US11869972B2
(en)
|
2018-11-26 |
2024-01-09 |
Etron Technology, Inc. |
Reduced-form-factor transistor with self-aligned terminals and adjustable on/off-currents and manufacture method thereof
|
|
US11004687B2
(en)
|
2019-02-11 |
2021-05-11 |
Applied Materials, Inc. |
Gate contact over active processes
|
|
US11973120B2
(en)
*
|
2020-06-24 |
2024-04-30 |
Etron Technology, Inc. |
Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method
|
|
KR102890789B1
(ko)
*
|
2020-08-18 |
2025-11-27 |
삼성전자주식회사 |
반도체 장치
|
|
US12501600B2
(en)
*
|
2021-10-04 |
2025-12-16 |
Invention And Collaboration Laboratory Pte. Ltd. |
SRAM cell structure
|