CN115083472A - Sram单元 - Google Patents

Sram单元 Download PDF

Info

Publication number
CN115083472A
CN115083472A CN202210241142.1A CN202210241142A CN115083472A CN 115083472 A CN115083472 A CN 115083472A CN 202210241142 A CN202210241142 A CN 202210241142A CN 115083472 A CN115083472 A CN 115083472A
Authority
CN
China
Prior art keywords
transistors
sram cell
region
sram
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210241142.1A
Other languages
English (en)
Chinese (zh)
Inventor
卢超群
黄立平
阙壮颖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Invention And Cooperative Laboratories Ltd
Original Assignee
Invention And Cooperative Laboratories Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Invention And Cooperative Laboratories Ltd filed Critical Invention And Cooperative Laboratories Ltd
Publication of CN115083472A publication Critical patent/CN115083472A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
CN202210241142.1A 2021-03-10 2022-03-10 Sram单元 Pending CN115083472A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US202163158896P 2021-03-10 2021-03-10
US63/158,896 2021-03-10
US202163162569P 2021-03-18 2021-03-18
US63/162,569 2021-03-18
US17/395,922 US20220302129A1 (en) 2021-03-10 2021-08-06 SRAM Cell Structures
US17/395,922 2021-08-06

Publications (1)

Publication Number Publication Date
CN115083472A true CN115083472A (zh) 2022-09-20

Family

ID=80683041

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210241142.1A Pending CN115083472A (zh) 2021-03-10 2022-03-10 Sram单元

Country Status (6)

Country Link
US (1) US20220302129A1 (enExample)
EP (1) EP4057348A3 (enExample)
JP (1) JP7775536B2 (enExample)
KR (2) KR20220129692A (enExample)
CN (1) CN115083472A (enExample)
TW (2) TWI801162B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202327047A (zh) * 2021-12-16 2023-07-01 新加坡商發明與合作實驗室有限公司 高性能運算和高儲存容量的同構/異構積體電路系統
US12334178B2 (en) * 2023-01-27 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit, system and method of forming the same
US20240304624A1 (en) * 2023-03-10 2024-09-12 Invention And Collaboration Laboratory, Inc. metal-oxide-semiconductor transistor and complementary metal-oxide-semiconductor circuit related

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010050395A1 (en) * 2000-03-14 2001-12-13 Hideya Esaki Semiconductor device and method for fabricating the same
US20110156107A1 (en) * 2009-12-30 2011-06-30 Bohr Mark T Self-aligned contacts
US20130069168A1 (en) * 2011-09-19 2013-03-21 Texas Instruments Incorporated Sram layout for double patterning
CN103366800A (zh) * 2012-03-30 2013-10-23 台湾积体电路制造股份有限公司 用于sram单元结构的方法和装置
TWI710064B (zh) * 2016-10-31 2020-11-11 台灣積體電路製造股份有限公司 記憶體裝置

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5338698A (en) * 1992-12-18 1994-08-16 International Business Machines Corporation Method of fabricating an ultra-short channel field effect transistor
JP2684979B2 (ja) * 1993-12-22 1997-12-03 日本電気株式会社 半導体集積回路装置及びその製造方法
WO2000011712A1 (en) * 1998-08-25 2000-03-02 Micron Technology, Inc. Method and structure for improved alignment tolerance in multiple, singularized plugs
JP4565700B2 (ja) * 1999-05-12 2010-10-20 ルネサスエレクトロニクス株式会社 半導体装置
SG115742A1 (en) * 2004-04-05 2005-10-28 Taiwan Semiconductor Mfg Sram device having high aspect ratio cell boundary
US8288813B2 (en) * 2004-08-13 2012-10-16 Infineon Technologies Ag Integrated memory device having columns having multiple bit lines
JP2006165480A (ja) * 2004-12-10 2006-06-22 Toshiba Corp 半導体装置
JP2007103862A (ja) 2005-10-07 2007-04-19 Renesas Technology Corp 半導体装置およびその製造方法
WO2009095998A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
KR101567024B1 (ko) * 2009-05-15 2015-11-09 삼성전자주식회사 반도체 기억 소자
EP2460180B1 (en) * 2009-07-30 2020-02-19 QUALCOMM Incorporated System-in packages
US8273617B2 (en) * 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
EP2483916B1 (en) * 2009-09-30 2019-06-12 Mie Fujitsu Semiconductor Limited Electronic devices and systems, and methods for making and using the same
US9875788B2 (en) * 2010-03-25 2018-01-23 Qualcomm Incorporated Low-power 5T SRAM with improved stability and reduced bitcell size
US8947912B2 (en) 2010-07-20 2015-02-03 University Of Virginia Licensing & Ventures Group Memory cell including unidirectional gate conductors and contacts
US8455932B2 (en) * 2011-05-06 2013-06-04 International Business Machines Corporation Local interconnect structure self-aligned to gate structure
US9048136B2 (en) * 2011-10-26 2015-06-02 GlobalFoundries, Inc. SRAM cell with individual electrical device threshold control
US9006841B2 (en) * 2011-12-30 2015-04-14 Stmicroelectronics International N.V. Dual port SRAM having reduced cell size and rectangular shape
US20150325514A1 (en) * 2014-05-09 2015-11-12 Qualcomm Incorporated High density sram array design with skipped, inter-layer conductive contacts
US9318564B2 (en) * 2014-05-19 2016-04-19 Qualcomm Incorporated High density static random access memory array having advanced metal patterning
KR102310122B1 (ko) * 2014-06-10 2021-10-08 삼성전자주식회사 논리 셀 및 이를 포함하는 집적회로 소자와 논리 셀의 제조 방법 및 집적회로 소자의 제조 방법
US9515077B1 (en) * 2015-12-18 2016-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Layout of static random access memory cell
JP2017138918A (ja) 2016-02-05 2017-08-10 ヤマハ株式会社 コンテンツ表示制御方法、プログラム、及びコンテンツ表示制御装置
US9646974B1 (en) * 2016-03-25 2017-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Dual-port static random access memory
KR102343202B1 (ko) * 2017-06-20 2021-12-23 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US10867864B2 (en) * 2018-09-27 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10763863B2 (en) * 2018-09-28 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device for logic and memory co-optimization
US11869972B2 (en) 2018-11-26 2024-01-09 Etron Technology, Inc. Reduced-form-factor transistor with self-aligned terminals and adjustable on/off-currents and manufacture method thereof
US11004687B2 (en) 2019-02-11 2021-05-11 Applied Materials, Inc. Gate contact over active processes
US11973120B2 (en) * 2020-06-24 2024-04-30 Etron Technology, Inc. Miniaturized transistor structure with controlled dimensions of source/drain and contact-opening and related manufacture method
KR102890789B1 (ko) * 2020-08-18 2025-11-27 삼성전자주식회사 반도체 장치
US12501600B2 (en) * 2021-10-04 2025-12-16 Invention And Collaboration Laboratory Pte. Ltd. SRAM cell structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010050395A1 (en) * 2000-03-14 2001-12-13 Hideya Esaki Semiconductor device and method for fabricating the same
US20110156107A1 (en) * 2009-12-30 2011-06-30 Bohr Mark T Self-aligned contacts
US20130069168A1 (en) * 2011-09-19 2013-03-21 Texas Instruments Incorporated Sram layout for double patterning
CN103366800A (zh) * 2012-03-30 2013-10-23 台湾积体电路制造股份有限公司 用于sram单元结构的方法和装置
US20160240541A1 (en) * 2012-03-30 2016-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and Apparatus for SRAM Cell Structure
TWI710064B (zh) * 2016-10-31 2020-11-11 台灣積體電路製造股份有限公司 記憶體裝置

Also Published As

Publication number Publication date
TWI801162B (zh) 2023-05-01
JP2022140348A (ja) 2022-09-26
TWI843480B (zh) 2024-05-21
JP7775536B2 (ja) 2025-11-26
EP4057348A2 (en) 2022-09-14
EP4057348A3 (en) 2023-01-04
US20220302129A1 (en) 2022-09-22
TW202329109A (zh) 2023-07-16
KR20220129692A (ko) 2022-09-23
KR20250047958A (ko) 2025-04-07
TW202238591A (zh) 2022-10-01

Similar Documents

Publication Publication Date Title
US11063053B2 (en) Integrated circuit and static random access memory thereof
JP2703970B2 (ja) Ｍｏｓ型半導体装置
CN113594165A (zh) 半导体结构及其形成方法
US7183590B2 (en) Horizontal tram
US12501600B2 (en) SRAM cell structure
TWI843480B (zh) Sram單元
US20250054535A1 (en) Integrated scaling and stretching platform for optimizing monolithic integration and/or heterogeneous integration in a single semiconductor die
JP2022140348A5 (enExample)
JP2689923B2 (ja) 半導体装置およびその製造方法
JP2025069116A (ja) スタンダードセル構造
EP4220718A1 (en) Integration system with high performance computing die and high storage volume die
KR102871142B1 (ko) 하나의 벌크 웨이퍼에 벌크 nmos 트랜지스터와 완전 절연 pmos 트랜지스터를 갖는 cmos sram 구조
TWI842110B (zh) 標準元件單元
CN113707661A (zh) 静态随机存取存储器
US5574298A (en) Substrate contact for gate array base cell and method of forming same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination