JP2022139519A - 高周波トランジスタ - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims abstract description 122
- 238000010586 diagram Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
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- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
Abstract
Description
図1(a)および(b)は、第1実施形態に係る高周波トランジスタ1を示す模式断面図である。図1(b)は、図1(a)中に示すA-A線に沿った断面図である。
図4(a)は、相互コンダクタンスGmの最大値Gmmaxを示すグラフである。
図4(b)は、ドレイン逆電流Idrを表すグラフである。
図4(a)および(b)の横軸は、拡張領域(Extension region)17および19における第2導電形不純物のドーズ量である。また、プレナー型ゲート構造を有するMOSFET(図5参照)の特性を、図中の破線で示している。
図5(a)および(b)は、第2実施形態に係る高周波トランジスタ2を示す模式断面図である。図5(a)は、平面図である。図5(b)は、図5(a)中に示すD-D線に沿った断面図である。
この例では、高周波トランジスタ2の特性(Embodiment)と、第4領域16を有しない高周波トランジスタの特性(without Body contact)と、を比較している。
Claims (5)
- 第1絶縁膜と、
前記第1絶縁膜上に設けられ、前記第1絶縁膜の上面に沿った第1方向に延在し、前記第1絶縁膜の前記上面に垂直な第2方向の第1層厚と、前記第1絶縁膜の前記上面に沿った第3方向であって、前記第1方向と直交する第3方向の第1幅と、を有し、前記前記第1幅が前記第1層厚よりも広くなるように設けられた第1半導体層と、
前記第1半導体層上に部分的に設けられ、前記第1半導体層の前記第2方向と交差する上面と、前記第1半導体層の前記第3方向と交差する側面と、を覆う制御電極と、
前記第1半導体層と前記制御電極との間に設けられ、前記制御電極を前記第1半導体層から電気的に絶縁した第2絶縁膜と、
を備え、
前記第1半導体層は、第1導電形の第1領域と、第2導電形の第2領域と、第2導電形の第3領域と、を含み、
前記第1領域、前記第2領域および前記第3領域は、前記第1方向に並び、
前記第1領域は、前記第2領域と前記第3領域との間に設けられ、
前記制御電極は、前記第1領域を覆うように設けられた高周波トランジスタ。 - 前記第1絶縁膜は、前記第1半導体層の前記上面とは反対側の下面に接する部分を有し、
前記第1絶縁膜の前記第1半導体の前記下面に接する前記部分は、前記第3方向における第2幅を有し、前記第1半導体層の前記第1幅は、前記第2幅よりも広く、
前記制御電極は、前記第1絶縁膜と前記第1半導体層との間に延在し、前記半導体部の前記下面の一部と前記第2絶縁膜を介して向き合う部分を有する請求項1記載の高周波トランジスタ。 - 前記第1半導体層の前記第2領域に電気的に接続された第1コンタクトプラグをさらに備え、
前記第1半導体層は、前記第1コンタクトプラグに接続された第1コンタクト領域と、前記第1絶縁膜と前記第1コンタクト領域との間に設けられた第1導電形の第4領域と、をさらに含み、
前記第2領域は、前記第1領域と前記第1コンタクト領域との間に設けられ、前記第1コンタクト領域を介して前記第1コンタクトプラグに電気的に接続され、
前記第4領域は、前記第1絶縁膜と前記第2領域との間において、前記第1領域につながり、
前記第1領域は、前記第4領域を介して前記第1コンタクト領域に電気的に接続された請求項1または2に記載の高周波トランジスタ。 - 前記第1方向に延在し、前記第3方向において、前記第1半導体層に並び、前記第3方向に延在した前記制御電極に部分的に覆われる第2半導体層と、
前記第2半導体層と前記制御電極とに間に設けられ、前記第2半導体層を前記制御電極から電気的に絶縁した別の第2絶縁膜と、
をさらに備えた請求項1~3のいずれか1つに記載の高周波トランジスタ。 - 第1絶縁膜と、
前記第1絶縁膜上に設けられ、前記第1絶縁膜の上面に沿った方向に並ぶ第1導電形の第1領域、第2導電形の第2領域および第2導電形の第3領域と、前記第2領域につながる第1コンタクト領域と、前記第3領域につながる第2コンタクト領域と、前記第1絶縁膜と前記第1コンタクト領域との間に設けられた第1導電形の第4領域と、を含む第1半導体層と、
前記第1半導体層上に部分的に設けられた制御電極と、
前記第1半導体層と前記制御電極との間に設けられ、前記制御電極を前記第1半導体層から電気的に絶縁した第2絶縁膜と、
を備え、
前記半導体層の前記第1領域は、前記第1絶縁膜と前記制御電極との間、および、前記第2領域と前記第3領域との間に設けられ、
前記第2領域は、前記第1コンタクト領域と前記第1領域との間に設けられ、
前記第3領域は、前記第1絶縁膜と前記第2コンタクト領域との間、および、前記第1領域と前記第2コンタクト領域との間に設けられ、
前記第4領域は、前記第1絶縁膜と前記第2領域との間において前記第1領域につながる高周波トランジスタ。
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JP2021039941A JP7464554B2 (ja) | 2021-03-12 | 2021-03-12 | 高周波トランジスタ |
CN202110911159.9A CN115084264A (zh) | 2021-03-12 | 2021-08-09 | 高频晶体管 |
US17/472,495 US11715796B2 (en) | 2021-03-12 | 2021-09-10 | High frequency transistor |
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Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05235345A (ja) | 1992-02-20 | 1993-09-10 | Nec Corp | 半導体装置およびその製造方法 |
JP2903892B2 (ja) | 1992-09-07 | 1999-06-14 | 日本電気株式会社 | 電界効果トランジスタの製造方法 |
JPH07302908A (ja) | 1994-05-02 | 1995-11-14 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US5587604A (en) | 1994-09-22 | 1996-12-24 | International Business Machines Corporation | Contacted body silicon-on-insulator field effect transistor |
JP3376208B2 (ja) | 1996-03-18 | 2003-02-10 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP3545583B2 (ja) | 1996-12-26 | 2004-07-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
JP3216591B2 (ja) | 1997-10-29 | 2001-10-09 | 日本電気株式会社 | 電界効果型トランジスタ |
JPH11233785A (ja) | 1998-02-17 | 1999-08-27 | Oki Electric Ind Co Ltd | Soimosfetおよびその製造方法 |
JP2002094067A (ja) | 2000-09-12 | 2002-03-29 | Fujitsu Ltd | Soi構造のmos型半導体装置及びその設計方法 |
JP2003174172A (ja) | 2001-09-26 | 2003-06-20 | Seiko Epson Corp | 電界効果トランジスタおよびこれを用いた電気光学装置、半導体装置ならびに電子機器 |
US6800905B2 (en) | 2001-12-14 | 2004-10-05 | International Business Machines Corporation | Implanted asymmetric doped polysilicon gate FinFET |
JP4141292B2 (ja) | 2002-03-15 | 2008-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2004022555A (ja) | 2002-06-12 | 2004-01-22 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁ゲート型電界効果トランジスタおよびその製造方法 |
US7358121B2 (en) | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
JP3479066B2 (ja) | 2002-12-09 | 2003-12-15 | シャープ株式会社 | Soi構造の半導体装置及びその製造方法 |
JP2004273983A (ja) * | 2003-03-12 | 2004-09-30 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2004311903A (ja) | 2003-04-10 | 2004-11-04 | Oki Electric Ind Co Ltd | 半導体装置及び製造方法 |
JP4534440B2 (ja) | 2003-07-17 | 2010-09-01 | セイコーエプソン株式会社 | 半導体装置 |
WO2005036651A1 (ja) | 2003-10-09 | 2005-04-21 | Nec Corporation | 半導体装置及びその製造方法 |
JP2005150402A (ja) | 2003-11-14 | 2005-06-09 | Toyo Univ | 完全空乏型soimosfet |
US7388258B2 (en) | 2003-12-10 | 2008-06-17 | International Business Machines Corporation | Sectional field effect devices |
WO2006011369A1 (ja) | 2004-07-29 | 2006-02-02 | Nec Corporation | 電界効果型トランジスタ用の基板、電界効果型トランジスタ及びその製造方法 |
JP5172083B2 (ja) | 2004-10-18 | 2013-03-27 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法、並びにメモリ回路 |
JP4965072B2 (ja) | 2004-12-01 | 2012-07-04 | ラピスセミコンダクタ株式会社 | Soi半導体装置の製造方法 |
US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
US7288802B2 (en) | 2005-07-27 | 2007-10-30 | International Business Machines Corporation | Virtual body-contacted trigate |
JP4989921B2 (ja) | 2006-06-05 | 2012-08-01 | ラピスセミコンダクタ株式会社 | 半導体装置 |
US7670896B2 (en) | 2006-11-16 | 2010-03-02 | International Business Machines Corporation | Method and structure for reducing floating body effects in MOSFET devices |
US8227867B2 (en) | 2008-12-23 | 2012-07-24 | International Business Machines Corporation | Body contacted hybrid surface semiconductor-on-insulator devices |
JP2011040458A (ja) | 2009-08-07 | 2011-02-24 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP6006219B2 (ja) | 2010-10-20 | 2016-10-12 | ペレグリン セミコンダクター コーポレイション | 蓄積電荷シンクを用いてmosfetの線形性を改善することに使用される方法及び装置−高調波リンクルの抑制 |
US8569139B2 (en) * | 2010-10-27 | 2013-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing strained source/drain structures |
KR101894221B1 (ko) | 2012-03-21 | 2018-10-04 | 삼성전자주식회사 | 전계 효과 트랜지스터 및 이를 포함하는 반도체 장치 |
KR101979637B1 (ko) | 2012-11-26 | 2019-08-28 | 삼성전자주식회사 | 반도체 소자 |
US20140159116A1 (en) | 2012-12-07 | 2014-06-12 | International Rectifier Corporation | III-Nitride Device Having an Enhanced Field Plate |
US8815668B2 (en) | 2012-12-07 | 2014-08-26 | International Business Machines Corporation | Preventing FIN erosion and limiting Epi overburden in FinFET structures by composite hardmask |
EP2843696A1 (en) | 2013-08-27 | 2015-03-04 | IMEC vzw | A method for dopant implantation of FinFET structures |
US9953979B2 (en) | 2014-11-24 | 2018-04-24 | Qualcomm Incorporated | Contact wrap around structure |
US9472512B1 (en) * | 2015-10-14 | 2016-10-18 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with contacts through a buried oxide layer and methods of producing the same |
JP6385965B2 (ja) | 2016-01-22 | 2018-09-05 | 株式会社東芝 | 高周波スイッチ |
-
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US20220293791A1 (en) | 2022-09-15 |
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