JP6385965B2 - 高周波スイッチ - Google Patents
高周波スイッチ Download PDFInfo
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- JP6385965B2 JP6385965B2 JP2016010950A JP2016010950A JP6385965B2 JP 6385965 B2 JP6385965 B2 JP 6385965B2 JP 2016010950 A JP2016010950 A JP 2016010950A JP 2016010950 A JP2016010950 A JP 2016010950A JP 6385965 B2 JP6385965 B2 JP 6385965B2
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- 210000000746 body region Anatomy 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 93
- 239000004065 semiconductor Substances 0.000 description 81
- 239000011248 coating agent Substances 0.000 description 21
- 238000000576 coating method Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 12
- 229910021332 silicide Inorganic materials 0.000 description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第2の半導体層15は、ドナー不純物をドーピングしたN型半導体層である。第2の半導体層15は、n型MOSFETのソース層およびドレイン層として機能する。
そこで、本実施形態では、P+領域18、ボディ電極77、および配線78によって、第1の半導体層14が外部へ引き出され、正孔が担うボディ電流がゲート電極30の長手方向に沿って流れることにより、第1の半導体層14の電位を制御することが可能となる。ゲート電極30の長手方向に沿った第1の半導体層14が、ボディ抵抗の主要な部分を構成する。ゲート長が、例えば、100nmより短い場合、第1の半導体層14が狭くなる。この場合、ボディ抵抗は増大して、ボディ電位が上昇するという問題が起こり得る。そこで、本実施形態では、ゲート電極30のゲート長は、100nmよりも長くなっている。
図12は、変形例1に係る半導体装置の要部を模式的に示す平面図である。また、図13は、変形例1に係る半導体装置の要部を模式的に示す断面図である。ここでは、上述した実施形態に係る半導体装置1と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
図14は、変形例2に係る半導体装置の要部を模式的に示す断面図である。ここでも、上述した実施形態に係る半導体装置1と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
Claims (10)
- 高周波信号の経路を切り替えるスイッチ回路と、
前記スイッチ回路を制御する制御回路と、を備え、
前記スイッチ回路は、複数のn型MOSFETを有し、前記複数のn型MOSFETは、
ソース層と、
ドレイン層と、
前記ソース層と前記ドレイン層との間に設けられたボディ領域と、
前記ボディ領域の上に設けられたゲート電極と、
前記ゲート電極の長手方向における活性領域の端部側に設けられ、前記ボディ領域に前記長手方向に沿ったボディ電流を流すためのボディ電極と、
前記ソース層、前記ドレイン層、及び前記ゲート電極を覆うように設けられ、前記長手方向に垂直な電流方向に作用する引張り内部応力を有する窒化シリコン膜と、を有する、高周波スイッチ。 - 前記複数のn型MOSFETは、前記ゲート電極の側面に設けられた側壁絶縁膜をさらに有し、
前記窒化シリコン膜の膜厚は、前記側壁絶縁膜の幅以上である、請求項1に記載の高周波スイッチ。 - 前記複数のn型MOSFETは、
前記活性領域内でゲート電極列を構成する複数の前記ゲート電極と櫛状をなすように設けられた配線をさらに有する、請求項1または2に記載の高周波スイッチ。 - 前記引張り内部応力が、1GPa以上かつ3GPa以下である、請求項1から3のいずれかに記載の高周波スイッチ。
- 前記窒化シリコン膜の膜厚が、70nm以上である、請求項1から4のいずれかに記載の高周波スイッチ。
- 前記ソース層と、前記ドレイン層と、前記ボディ領域とが、SOI層に設けられている、請求項1から5のいずれかに記載の高周波スイッチ。
- 前記SOI層の厚さが70nm以下である、請求項6に記載の高周波スイッチ。
- 前記n型MOSFETがオン状態であるときの当該n型MOSFETのドレイン・ソース間のピーク電圧が100mV以下である、請求項1から7のいずれかに記載の高周波スイッチ。
- 前記ゲート電極のゲート長が、100nmよりも長い、請求項1から8のいずれかに記載の高周波スイッチ。
- 前記ゲート電極列が設けられた前記活性領域において、前記ゲート電極列の両端に位置する第1のゲート電極が、ダミーゲート電極であるか、または、前記第1のゲート電極の中心から前記活性領域の前記電流方向の周縁部までの長さが、前記ゲート電極の中心間のピッチよりも長い、請求項3に記載の高周波スイッチ。
Priority Applications (3)
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JP2016010950A JP6385965B2 (ja) | 2016-01-22 | 2016-01-22 | 高周波スイッチ |
CN201610750737.4A CN106997901A (zh) | 2016-01-22 | 2016-08-29 | 高频开关 |
US15/410,346 US10347655B2 (en) | 2016-01-22 | 2017-01-19 | Semiconductor switch |
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JP2016010950A JP6385965B2 (ja) | 2016-01-22 | 2016-01-22 | 高周波スイッチ |
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JP2017130625A JP2017130625A (ja) | 2017-07-27 |
JP6385965B2 true JP6385965B2 (ja) | 2018-09-05 |
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US (1) | US10347655B2 (ja) |
JP (1) | JP6385965B2 (ja) |
CN (1) | CN106997901A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11715796B2 (en) | 2021-03-12 | 2023-08-01 | Kabushiki Kaisha Toshiba | High frequency transistor |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170338321A1 (en) * | 2016-05-18 | 2017-11-23 | Newport Fab, LLC dba Jazz Semiconductor, Inc. | Nickel silicide implementation for silicon-on-insulator (soi) radio frequency (rf) switch technology |
US10637411B2 (en) | 2017-10-06 | 2020-04-28 | Qualcomm Incorporated | Transistor layout for improved harmonic performance |
KR20220028678A (ko) * | 2020-08-31 | 2022-03-08 | 주식회사 디비하이텍 | Soi 기판 상에 형성된 반도체 소자 |
Family Cites Families (18)
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JP2002164441A (ja) * | 2000-11-27 | 2002-06-07 | Matsushita Electric Ind Co Ltd | 高周波スイッチ回路装置 |
JP2003060076A (ja) | 2001-08-21 | 2003-02-28 | Nec Corp | 半導体装置及びその製造方法 |
JP3759924B2 (ja) * | 2002-11-21 | 2006-03-29 | 松下電器産業株式会社 | 半導体装置 |
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JP2007173356A (ja) * | 2005-12-20 | 2007-07-05 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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JP5041154B2 (ja) * | 2007-11-19 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 高周波スイッチ回路 |
DE102008030852A1 (de) * | 2008-06-30 | 2010-01-07 | Advanced Micro Devices, Inc., Sunnyvale | Kontaktgräben zur besseren Verspannungsübertragung in Transistoren mit geringem Abstand |
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JP2011108692A (ja) | 2009-11-12 | 2011-06-02 | Ulvac Japan Ltd | Cmosデバイス用シリコンウェハの製造方法 |
JP5632663B2 (ja) * | 2010-06-29 | 2014-11-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5512498B2 (ja) | 2010-11-29 | 2014-06-04 | 株式会社東芝 | 半導体装置 |
JP2012134251A (ja) * | 2010-12-20 | 2012-07-12 | Samsung Electro-Mechanics Co Ltd | 高周波半導体スイッチ |
US8664725B1 (en) * | 2011-03-04 | 2014-03-04 | Altera Corporation | Strain enhanced transistors with adjustable layouts |
JP6019599B2 (ja) | 2011-03-31 | 2016-11-02 | ソニー株式会社 | 半導体装置、および、その製造方法 |
US8674415B2 (en) * | 2012-01-20 | 2014-03-18 | Samsung Electro-Mechanics Co., Ltd. | High frequency semiconductor switch |
JP2016087810A (ja) | 2014-10-30 | 2016-05-23 | セイコーエプソン株式会社 | 三次元造形物の製造方法、三次元造形物製造装置および三次元造形物 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11715796B2 (en) | 2021-03-12 | 2023-08-01 | Kabushiki Kaisha Toshiba | High frequency transistor |
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CN106997901A (zh) | 2017-08-01 |
US20170213848A1 (en) | 2017-07-27 |
JP2017130625A (ja) | 2017-07-27 |
US10347655B2 (en) | 2019-07-09 |
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