JP2022129917A5 - - Google Patents

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Publication number
JP2022129917A5
JP2022129917A5 JP2021028798A JP2021028798A JP2022129917A5 JP 2022129917 A5 JP2022129917 A5 JP 2022129917A5 JP 2021028798 A JP2021028798 A JP 2021028798A JP 2021028798 A JP2021028798 A JP 2021028798A JP 2022129917 A5 JP2022129917 A5 JP 2022129917A5
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JP
Japan
Prior art keywords
trench
peripheral
wall
barrier diode
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021028798A
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English (en)
Japanese (ja)
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JP7684816B2 (ja
JP2022129917A (ja
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Priority claimed from JP2021028798A external-priority patent/JP7684816B2/ja
Priority to JP2021028798A priority Critical patent/JP7684816B2/ja
Priority to US18/260,519 priority patent/US20240072179A1/en
Priority to CN202280016967.1A priority patent/CN116888742A/zh
Priority to EP22759243.3A priority patent/EP4300585B1/en
Priority to PCT/JP2022/003328 priority patent/WO2022181202A1/ja
Publication of JP2022129917A publication Critical patent/JP2022129917A/ja
Publication of JP2022129917A5 publication Critical patent/JP2022129917A5/ja
Publication of JP7684816B2 publication Critical patent/JP7684816B2/ja
Application granted granted Critical
Active legal-status Critical Current
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JP2021028798A 2021-02-25 2021-02-25 ショットキーバリアダイオード Active JP7684816B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021028798A JP7684816B2 (ja) 2021-02-25 2021-02-25 ショットキーバリアダイオード
PCT/JP2022/003328 WO2022181202A1 (ja) 2021-02-25 2022-01-28 ショットキーバリアダイオード
CN202280016967.1A CN116888742A (zh) 2021-02-25 2022-01-28 肖特基势垒二极管
EP22759243.3A EP4300585B1 (en) 2021-02-25 2022-01-28 Schottky barrier diode
US18/260,519 US20240072179A1 (en) 2021-02-25 2022-01-28 Schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021028798A JP7684816B2 (ja) 2021-02-25 2021-02-25 ショットキーバリアダイオード

Publications (3)

Publication Number Publication Date
JP2022129917A JP2022129917A (ja) 2022-09-06
JP2022129917A5 true JP2022129917A5 (https=) 2024-06-24
JP7684816B2 JP7684816B2 (ja) 2025-05-28

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ID=83049229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021028798A Active JP7684816B2 (ja) 2021-02-25 2021-02-25 ショットキーバリアダイオード

Country Status (5)

Country Link
US (1) US20240072179A1 (https=)
EP (1) EP4300585B1 (https=)
JP (1) JP7684816B2 (https=)
CN (1) CN116888742A (https=)
WO (1) WO2022181202A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240341059A1 (en) * 2023-04-05 2024-10-10 Hamilton Sundstrand Corporation Rectifier diode assembly

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3691736B2 (ja) * 2000-07-31 2005-09-07 新電元工業株式会社 半導体装置
WO2015060441A1 (ja) * 2013-10-24 2015-04-30 ローム株式会社 半導体装置および半導体パッケージ
JP6296445B2 (ja) * 2014-02-10 2018-03-20 ローム株式会社 ショットキーバリアダイオード
DE102016106967B4 (de) 2016-04-15 2024-07-04 Infineon Technologies Ag Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements
JP6845397B2 (ja) 2016-04-28 2021-03-17 株式会社タムラ製作所 トレンチmos型ショットキーダイオード
JP7045008B2 (ja) 2017-10-26 2022-03-31 Tdk株式会社 ショットキーバリアダイオード
JP7165322B2 (ja) * 2018-03-30 2022-11-04 Tdk株式会社 ショットキーバリアダイオード
JP6626929B1 (ja) * 2018-06-29 2019-12-25 京セラ株式会社 半導体デバイス及び電気装置
DE112019004179T5 (de) 2018-08-22 2021-06-10 Mitsubishi Electric Corporation Oxid-halbleitereinheit und verfahren zur herstellung derselben

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