JP2022129918A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2022129918A5 JP2022129918A5 JP2021028799A JP2021028799A JP2022129918A5 JP 2022129918 A5 JP2022129918 A5 JP 2022129918A5 JP 2021028799 A JP2021028799 A JP 2021028799A JP 2021028799 A JP2021028799 A JP 2021028799A JP 2022129918 A5 JP2022129918 A5 JP 2022129918A5
- Authority
- JP
- Japan
- Prior art keywords
- trench
- anode electrode
- outer circumferential
- wall
- diode according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims 2
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021028799A JP7669159B2 (ja) | 2021-02-25 | 2021-02-25 | ショットキーバリアダイオード |
| US18/260,520 US12520510B2 (en) | 2021-02-25 | 2022-01-28 | Schottky barrier diode |
| CN202280016981.1A CN116888743A (zh) | 2021-02-25 | 2022-01-28 | 肖特基势垒二极管 |
| PCT/JP2022/003329 WO2022181203A1 (ja) | 2021-02-25 | 2022-01-28 | ショットキーバリアダイオード |
| EP22759244.1A EP4300586A4 (en) | 2021-02-25 | 2022-01-28 | SCHOTTKY BARRIER DIODE |
| TW111105174A TWI803189B (zh) | 2021-02-25 | 2022-02-14 | 肖特基能障二極體 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021028799A JP7669159B2 (ja) | 2021-02-25 | 2021-02-25 | ショットキーバリアダイオード |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022129918A JP2022129918A (ja) | 2022-09-06 |
| JP2022129918A5 true JP2022129918A5 (https=) | 2024-07-03 |
| JP7669159B2 JP7669159B2 (ja) | 2025-04-28 |
Family
ID=83049239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021028799A Active JP7669159B2 (ja) | 2021-02-25 | 2021-02-25 | ショットキーバリアダイオード |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12520510B2 (https=) |
| EP (1) | EP4300586A4 (https=) |
| JP (1) | JP7669159B2 (https=) |
| CN (1) | CN116888743A (https=) |
| TW (1) | TWI803189B (https=) |
| WO (1) | WO2022181203A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI905790B (zh) * | 2023-09-21 | 2025-11-21 | 日商Ｔｄｋ股份有限公司 | 半導體裝置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6191447B1 (en) * | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
| US8610235B2 (en) * | 2011-09-22 | 2013-12-17 | Alpha And Omega Semiconductor Incorporated | Trench MOSFET with integrated Schottky barrier diode |
| JP6296445B2 (ja) | 2014-02-10 | 2018-03-20 | ローム株式会社 | ショットキーバリアダイオード |
| DE102016106967B4 (de) * | 2016-04-15 | 2024-07-04 | Infineon Technologies Ag | Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements |
| JP6845397B2 (ja) | 2016-04-28 | 2021-03-17 | 株式会社タムラ製作所 | トレンチｍｏｓ型ショットキーダイオード |
| JP6932997B2 (ja) * | 2017-05-25 | 2021-09-08 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| JP7045008B2 (ja) | 2017-10-26 | 2022-03-31 | Tdk株式会社 | ショットキーバリアダイオード |
| JP7165322B2 (ja) * | 2018-03-30 | 2022-11-04 | Tdk株式会社 | ショットキーバリアダイオード |
| JP6626929B1 (ja) * | 2018-06-29 | 2019-12-25 | 京セラ株式会社 | 半導体デバイス及び電気装置 |
| JP6980116B2 (ja) * | 2018-08-22 | 2021-12-15 | 三菱電機株式会社 | 酸化物半導体装置及びその製造方法 |
| US20210036166A1 (en) * | 2019-08-01 | 2021-02-04 | AZ Power, Inc | MERGED PiN SCHOTTKY (MPS) DIODE WITH MULTIPLE CELL DESIGN AND MANUFACTURING METHOD THEREOF |
-
2021
- 2021-02-25 JP JP2021028799A patent/JP7669159B2/ja active Active
-
2022
- 2022-01-28 EP EP22759244.1A patent/EP4300586A4/en active Pending
- 2022-01-28 CN CN202280016981.1A patent/CN116888743A/zh active Pending
- 2022-01-28 US US18/260,520 patent/US12520510B2/en active Active
- 2022-01-28 WO PCT/JP2022/003329 patent/WO2022181203A1/ja not_active Ceased
- 2022-02-14 TW TW111105174A patent/TWI803189B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6296445B2 (ja) | ショットキーバリアダイオード | |
| CN101517752B (zh) | 具有浮岛的结势垒肖特基二极管 | |
| US8809969B2 (en) | Semiconductor device | |
| US20160133741A1 (en) | Silicon carbide semiconductor device and method for manufacturing the silicon carbide semiconductor device | |
| JP2023079552A5 (https=) | ||
| JP2012009522A5 (https=) | ||
| JP5758824B2 (ja) | 半導体装置および半導体装置の製造方法 | |
| CN109844954B (zh) | 半导体器件及其制造方法 | |
| JP2012009671A (ja) | 半導体装置およびその製造方法 | |
| US20170288014A1 (en) | Semiconductor device and manufacturing method of the same | |
| US3984859A (en) | High withstand voltage semiconductor device with shallow grooves between semiconductor region and field limiting rings with outer mesa groove | |
| JP4274771B2 (ja) | 半導体装置 | |
| JP2022129918A5 (https=) | ||
| JP2023079551A5 (https=) | ||
| JP2022129917A5 (https=) | ||
| JP2021120990A (ja) | ダイオード | |
| WO2018000551A1 (zh) | 半导体结构、半导体组件及功率半导体器件 | |
| JP7608552B2 (ja) | 半導体装置 | |
| JP2012069961A (ja) | 電力用半導体装置 | |
| JPWO2024042814A5 (https=) | ||
| JP2024022285A5 (https=) | ||
| JP2024030592A (ja) | 半導体装置及びその製造方法 | |
| JPH09283771A (ja) | ショットキーバリアダイオード | |
| CN108206207B (zh) | 具有半导体本体的晶闸管 | |
| JP5588765B2 (ja) | ショットキーバリアダイオード及びその製造方法 |