JP7684816B2 - ショットキーバリアダイオード - Google Patents

ショットキーバリアダイオード Download PDF

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Publication number
JP7684816B2
JP7684816B2 JP2021028798A JP2021028798A JP7684816B2 JP 7684816 B2 JP7684816 B2 JP 7684816B2 JP 2021028798 A JP2021028798 A JP 2021028798A JP 2021028798 A JP2021028798 A JP 2021028798A JP 7684816 B2 JP7684816 B2 JP 7684816B2
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JP
Japan
Prior art keywords
trench
schottky barrier
barrier diode
peripheral
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021028798A
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English (en)
Japanese (ja)
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JP2022129917A (ja
JP2022129917A5 (https=
Inventor
潤 有馬
実 藤田
克己 川崎
潤 平林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP2021028798A priority Critical patent/JP7684816B2/ja
Priority to PCT/JP2022/003328 priority patent/WO2022181202A1/ja
Priority to CN202280016967.1A priority patent/CN116888742A/zh
Priority to EP22759243.3A priority patent/EP4300585B1/en
Priority to US18/260,519 priority patent/US20240072179A1/en
Publication of JP2022129917A publication Critical patent/JP2022129917A/ja
Publication of JP2022129917A5 publication Critical patent/JP2022129917A5/ja
Application granted granted Critical
Publication of JP7684816B2 publication Critical patent/JP7684816B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

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  • Electrodes Of Semiconductors (AREA)
JP2021028798A 2021-02-25 2021-02-25 ショットキーバリアダイオード Active JP7684816B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021028798A JP7684816B2 (ja) 2021-02-25 2021-02-25 ショットキーバリアダイオード
PCT/JP2022/003328 WO2022181202A1 (ja) 2021-02-25 2022-01-28 ショットキーバリアダイオード
CN202280016967.1A CN116888742A (zh) 2021-02-25 2022-01-28 肖特基势垒二极管
EP22759243.3A EP4300585B1 (en) 2021-02-25 2022-01-28 Schottky barrier diode
US18/260,519 US20240072179A1 (en) 2021-02-25 2022-01-28 Schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021028798A JP7684816B2 (ja) 2021-02-25 2021-02-25 ショットキーバリアダイオード

Publications (3)

Publication Number Publication Date
JP2022129917A JP2022129917A (ja) 2022-09-06
JP2022129917A5 JP2022129917A5 (https=) 2024-06-24
JP7684816B2 true JP7684816B2 (ja) 2025-05-28

Family

ID=83049229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021028798A Active JP7684816B2 (ja) 2021-02-25 2021-02-25 ショットキーバリアダイオード

Country Status (5)

Country Link
US (1) US20240072179A1 (https=)
EP (1) EP4300585B1 (https=)
JP (1) JP7684816B2 (https=)
CN (1) CN116888742A (https=)
WO (1) WO2022181202A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240341059A1 (en) * 2023-04-05 2024-10-10 Hamilton Sundstrand Corporation Rectifier diode assembly

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170301792A1 (en) 2016-04-15 2017-10-19 Infineon Technologies Ag Semiconductor Devices and a Method for Forming a Semiconductor Device
JP2019079984A (ja) 2017-10-26 2019-05-23 Tdk株式会社 ショットキーバリアダイオード
WO2020004437A1 (ja) 2018-06-29 2020-01-02 京セラ株式会社 半導体デバイス及び電気装置
WO2020039971A1 (ja) 2018-08-22 2020-02-27 三菱電機株式会社 酸化物半導体装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3691736B2 (ja) * 2000-07-31 2005-09-07 新電元工業株式会社 半導体装置
WO2015060441A1 (ja) * 2013-10-24 2015-04-30 ローム株式会社 半導体装置および半導体パッケージ
JP6296445B2 (ja) * 2014-02-10 2018-03-20 ローム株式会社 ショットキーバリアダイオード
JP6845397B2 (ja) 2016-04-28 2021-03-17 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP7165322B2 (ja) * 2018-03-30 2022-11-04 Tdk株式会社 ショットキーバリアダイオード

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170301792A1 (en) 2016-04-15 2017-10-19 Infineon Technologies Ag Semiconductor Devices and a Method for Forming a Semiconductor Device
JP2019079984A (ja) 2017-10-26 2019-05-23 Tdk株式会社 ショットキーバリアダイオード
WO2020004437A1 (ja) 2018-06-29 2020-01-02 京セラ株式会社 半導体デバイス及び電気装置
WO2020039971A1 (ja) 2018-08-22 2020-02-27 三菱電機株式会社 酸化物半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP4300585A4 (en) 2025-01-01
WO2022181202A1 (ja) 2022-09-01
US20240072179A1 (en) 2024-02-29
JP2022129917A (ja) 2022-09-06
EP4300585B1 (en) 2026-03-04
EP4300585A1 (en) 2024-01-03
CN116888742A (zh) 2023-10-13

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