CN116888742A - 肖特基势垒二极管 - Google Patents
肖特基势垒二极管 Download PDFInfo
- Publication number
- CN116888742A CN116888742A CN202280016967.1A CN202280016967A CN116888742A CN 116888742 A CN116888742 A CN 116888742A CN 202280016967 A CN202280016967 A CN 202280016967A CN 116888742 A CN116888742 A CN 116888742A
- Authority
- CN
- China
- Prior art keywords
- outer peripheral
- schottky barrier
- barrier diode
- groove
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
- H10D8/605—Schottky-barrier diodes of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-028798 | 2021-02-25 | ||
| JP2021028798A JP7684816B2 (ja) | 2021-02-25 | 2021-02-25 | ショットキーバリアダイオード |
| PCT/JP2022/003328 WO2022181202A1 (ja) | 2021-02-25 | 2022-01-28 | ショットキーバリアダイオード |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116888742A true CN116888742A (zh) | 2023-10-13 |
Family
ID=83049229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280016967.1A Pending CN116888742A (zh) | 2021-02-25 | 2022-01-28 | 肖特基势垒二极管 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240072179A1 (https=) |
| EP (1) | EP4300585B1 (https=) |
| JP (1) | JP7684816B2 (https=) |
| CN (1) | CN116888742A (https=) |
| WO (1) | WO2022181202A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240341059A1 (en) * | 2023-04-05 | 2024-10-10 | Hamilton Sundstrand Corporation | Rectifier diode assembly |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3691736B2 (ja) * | 2000-07-31 | 2005-09-07 | 新電元工業株式会社 | 半導体装置 |
| WO2015060441A1 (ja) * | 2013-10-24 | 2015-04-30 | ローム株式会社 | 半導体装置および半導体パッケージ |
| JP6296445B2 (ja) * | 2014-02-10 | 2018-03-20 | ローム株式会社 | ショットキーバリアダイオード |
| DE102016106967B4 (de) | 2016-04-15 | 2024-07-04 | Infineon Technologies Ag | Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements |
| JP6845397B2 (ja) | 2016-04-28 | 2021-03-17 | 株式会社タムラ製作所 | トレンチｍｏｓ型ショットキーダイオード |
| JP7045008B2 (ja) | 2017-10-26 | 2022-03-31 | Tdk株式会社 | ショットキーバリアダイオード |
| JP7165322B2 (ja) * | 2018-03-30 | 2022-11-04 | Tdk株式会社 | ショットキーバリアダイオード |
| JP6626929B1 (ja) * | 2018-06-29 | 2019-12-25 | 京セラ株式会社 | 半導体デバイス及び電気装置 |
| DE112019004179T5 (de) | 2018-08-22 | 2021-06-10 | Mitsubishi Electric Corporation | Oxid-halbleitereinheit und verfahren zur herstellung derselben |
-
2021
- 2021-02-25 JP JP2021028798A patent/JP7684816B2/ja active Active
-
2022
- 2022-01-28 EP EP22759243.3A patent/EP4300585B1/en active Active
- 2022-01-28 WO PCT/JP2022/003328 patent/WO2022181202A1/ja not_active Ceased
- 2022-01-28 US US18/260,519 patent/US20240072179A1/en active Pending
- 2022-01-28 CN CN202280016967.1A patent/CN116888742A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP7684816B2 (ja) | 2025-05-28 |
| EP4300585A4 (en) | 2025-01-01 |
| WO2022181202A1 (ja) | 2022-09-01 |
| US20240072179A1 (en) | 2024-02-29 |
| JP2022129917A (ja) | 2022-09-06 |
| EP4300585B1 (en) | 2026-03-04 |
| EP4300585A1 (en) | 2024-01-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |