JP2022076482A - 負極活物質、これを含む負極及びリチウム二次電池 - Google Patents
負極活物質、これを含む負極及びリチウム二次電池 Download PDFInfo
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- JP2022076482A JP2022076482A JP2022001037A JP2022001037A JP2022076482A JP 2022076482 A JP2022076482 A JP 2022076482A JP 2022001037 A JP2022001037 A JP 2022001037A JP 2022001037 A JP2022001037 A JP 2022001037A JP 2022076482 A JP2022076482 A JP 2022076482A
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- negative electrode
- active material
- electrode active
- sio
- silicon oxide
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- 239000007773 negative electrode material Substances 0.000 title claims abstract description 81
- 229910052744 lithium Inorganic materials 0.000 title claims abstract description 23
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 239000011777 magnesium Substances 0.000 claims abstract description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 69
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000002131 composite material Substances 0.000 claims abstract description 34
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000011247 coating layer Substances 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000003575 carbonaceous material Substances 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 11
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000391 magnesium silicate Substances 0.000 claims abstract description 7
- 229910052919 magnesium silicate Inorganic materials 0.000 claims abstract description 7
- 235000019792 magnesium silicate Nutrition 0.000 claims abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 6
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 32
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 29
- 229910017625 MgSiO Inorganic materials 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 19
- 239000000843 powder Substances 0.000 claims description 10
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- 239000010410 layer Substances 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 6
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- 239000007789 gas Substances 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 239000010703 silicon Substances 0.000 description 20
- 239000000203 mixture Substances 0.000 description 17
- 239000012071 phase Substances 0.000 description 15
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- 230000000052 comparative effect Effects 0.000 description 11
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
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- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 2
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- 229910015645 LiMn Inorganic materials 0.000 description 2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 229910003002 lithium salt Inorganic materials 0.000 description 2
- 159000000002 lithium salts Chemical class 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
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- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
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- QEXMICRJPVUPSN-UHFFFAOYSA-N lithium manganese(2+) oxygen(2-) Chemical class [O-2].[Mn+2].[Li+] QEXMICRJPVUPSN-UHFFFAOYSA-N 0.000 description 1
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- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000006234 thermal black Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
Description
前記ケイ素酸化物複合体の表面に位置し、炭素系物質を含む炭素コーティング層と、を備え、
X線回折分析時、Mg2SiO4及びMgSiO3によるピークを同時に示し、MgOによるピークは観察されず、
前記Mg2SiO4に帰属するピーク強度I(Mg2SiO4)とMgSiO3に帰属するピーク強度I(MgSiO3)との比であるI(Mg2SiO4)/I(MgSiO3)が1よりも小さく、この際、前記Mg2SiO4に帰属するピークが2θ=32.2±0.2゜で観察され、前記MgSiO3に帰属するピークが2θ=30.9±0.2゜で観察され、
カール・フィッシャー(karl fischer)法で250℃における水分含量の測定時、200ppm未満の水分量を有する負極活物質に関する。
前記炭素コーティング層の含量が、ケイ素酸化物複合体100重量部に対して2.5~10重量部である負極活物質に関する。
前記ケイ素酸化物複合体100重量%に対する前記Mgの含量が4重量%~16重量%である負極活物質に関する。
前記ケイ素酸化物複合体粉末の平均粒径D50が0.1μm~20μmである負極活物質に関する。
SiOx(0<x<2)ガスとMgガスとを反応させた後、400℃~900℃に冷却してケイ素酸化物複合体を析出する段階と、
前記析出されたケイ素酸化物複合体を粉砕する段階と、
前記粉砕されたケイ素酸化物複合体に炭素系物質原料ガスを注入し、850℃~1,150℃で30分~8時間熱処理することで、前記ケイ素酸化物複合体の表面に炭素系物質を含むコーティング層を形成する段階と、を含む、負極活物質の製造方法に関する。
前記SiOx(0<x<2)ガスは、SiとSiO2とを1,000℃~1,800℃の範囲で蒸発させて製造され、前記Mgガスは、800℃~1,600℃の範囲でMgを蒸発させて製造される負極活物質の製造方法に関する。
前記SiOx(0<x<2)ガスとMgガスとの反応が、800~1,800℃で行われる負極活物質の製造方法に関する。
前記粉砕されたケイ素酸化物複合体に炭素系物質原料ガスを注入し、800℃~1,150℃で熱処理する負極活物質の製造方法に関する。
本発明の一面による負極活物質は、
i)Si、ii)SiOx(0<x≦2)で表されるケイ素酸化物、及びiii)Si及びMgを含むケイ酸マグネシウムを含むケイ素酸化物複合体と、
前記ケイ素酸化物複合体の表面に位置し、炭素系物質を含む炭素コーティング層と、を備え、
X線回折分析時、Mg2SiO4及びMgSiO3によるピークを同時に示し、MgOによるピークは観察されず、
前記Mg2SiO4に帰属するピーク強度I(Mg2SiO4)とMgSiO3に帰属するピーク強度I(MgSiO3)との比であるI(Mg2SiO4)/I(MgSiO3)が1よりも小さく、この際、前記Mg2SiO4に帰属するピークが2θ=32.2±0.2゜で観察され、前記MgSiO3に帰属するピークが2θ=30.9±0.2゜で観察され、
カール・フィッシャー法で250℃における水分含量の測定時、200ppm未満の水分量を有する。
本発明の一面による負極活物質を製造する方法は、
SiOx(0<x<2)ガスとMgガスとを反応させた後、400℃~900℃に冷却してケイ素酸化物複合体を析出する段階と、
前記析出されたケイ素酸化物複合体を粉砕する段階と、
前記粉砕されたケイ素酸化物複合体に炭素系物質原料ガスを注入し、850℃~1,150℃で30分~8時間熱処理することで、前記ケイ素酸化物複合体の表面に炭素系物質を含むコーティング層を形成する段階と、を含む。
本発明の一面による負極は、負極用の集電体の上に、負極活物質、導電材及びバインダーの混合物を塗布してから乾燥することで製造することができ、必要に応じて、前記混合物に充填剤をさらに含め得る。前記負極活物質は前述の特徴を有するコア-シェル構造の複合粒子を含む。
本発明の一面によれば、正極、負極及び前記正極と負極との間に挟まれた分離膜を含むリチウム二次電池を提供し、前記負極は、本発明の一面による負極を含む。
(1)負極活物質の製造
ケイ素粉末と二酸化ケイ素(SiO2)粉末とを1:1のモル比で均一に混合し、1torrの減圧雰囲気で1,400℃で熱処理してSiOx(0<x<2)ガスを準備し、Mgを900℃で熱処理してMgガスを準備した。
前記で製造された負極活物質:人造黒鉛:導電材(カーボンブラック):カルボキシメチルセルロース:スチレンブタジエンゴム(SBR)=9.6:86.4:1:1:2の重量比で分散媒である水に混合することで、負極合剤層スラリーを製造した。前記負極合剤層スラリーを20μm厚さの銅集電体の両面に均一にコーティングした。コーティングは、乾燥温度70℃、コーティング速度0.2m/minの条件で行われた。その後、ロールプレス装備を用いて気孔度28%に合わせて負極合剤層を圧延してターゲット厚さにした。次に、130℃の真空オーブンで8時間の間乾燥して負極を製造した。
Mg含有ケイ素酸化物複合体を合成するに際し、冷却後、1,200℃で追加の熱処理を行った後、炭素コーティング層を形成したことを除いては、実施例1と同様の方法で負極活物質を製造した。
このようにして製造された負極活物質を用いたことを除いては、実施例1と同様の方法で負極及び二次電池を製造した。
気相反応後に30分内で300℃に冷却したことを除いては、実施例1と同様の方法で負極活物質を製造した。
炭素コーティング層の形成時、処理温度を800℃にしたことを除いては、実施例1と同様の方法で負極活物質を製造した。
炭素コーティング層の含量を2重量部にしたことを除いては、実施例1と同様の方法で負極活物質を製造した。
〔実験例1:X-線回折(XRD)分析測定〕
実施例1及び比較例1~4によって製造された負極活物質に対し、Cu(Kα線)(波長:1.54λ)ソースを用いたXRD回折測定を行った。測定結果を図1に示し、測定された結晶質ピークの種類は表1に示した。
・ターゲット:Cu(Kα線)黒鉛単色化装置
・スリット:発散スリット=1度、受信スリット=0.1mm、散乱スリット=1度
実施例1及び比較例1~4で製造された負極活物質の水分量を測定した。
実施例1及び比較例1~4で製造された電池を常温(25℃)で0.1C-レート(rate)でCC-CV充電し(4.2V定電圧で充電、0.05Cカットオフ(cut off))、0.1C-レート(rate)でCC放電(2.5Vカットオフ(cut off))する過程を二回繰り返して、0.5C-レート(rate)でCC-CV充電(4.2V定電圧で充電、0.05Cカットオフ(cut off))し、0.5C-レート(rate)でCC放電(2.5Vカットオフ(cut off))する過程を48回繰り返して、下記の式を用いて容量維持率を求めた。測定結果を表1に示した。
容量維持率(%)=[50番目のサイクルの放電容量/二番目のサイクルの放電容量]×100
Claims (10)
- i)Si、ii)SiOx(0<x≦2)で表されるケイ素酸化物、及びiii)Si及びMgを含むケイ酸マグネシウムを含むケイ素酸化物複合体と、
前記ケイ素酸化物複合体の表面に位置し、炭素系物質を含む炭素コーティング層と、を備え、
X線回折分析時、Mg2SiO4及びMgSiO3によるピークを同時に示し、MgOによるピークは観察されず、
前記Mg2SiO4に帰属するピーク強度I(Mg2SiO4)とMgSiO3に帰属するピーク強度I(MgSiO3)との比であるI(Mg2SiO4)/I(MgSiO3)が1よりも小さく、この際、前記Mg2SiO4に帰属するピークが2θ=32.2±0.2゜で観察され、前記MgSiO3に帰属するピークが2θ=30.9±0.2゜で観察され、
カール・フィッシャー法で250℃における水分含量を測定した時、200ppm未満の水分量を有する、負極活物質。 - 前記炭素コーティング層の含量が、ケイ素酸化物複合体100重量部に対して2.5~10重量部である、請求項1に記載の負極活物質。
- 前記ケイ素酸化物複合体100重量%に対する前記Mgの含量が4重量%~16重量%である、請求項1に記載の負極活物質。
- 前記ケイ素酸化物複合体粉末の平均粒径D50が0.1μm~20μmである、請求項1に記載の負極活物質。
- 請求項1から請求項4のいずれか一項に記載の負極活物質の製造方法であって、
SiOx(0<x<2)ガスとMgガスとを反応させた後、400℃~900℃に冷却してケイ素酸化物複合体を析出する段階と、
前記析出されたケイ素酸化物複合体を粉砕する段階と、
前記粉砕されたケイ素酸化物複合体に炭素系物質原料ガスを注入し、850℃~1,150℃で30分~8時間熱処理することで、前記ケイ素酸化物複合体の表面に炭素系物質を含むコーティング層を形成する段階と、を含む、負極活物質の製造方法。 - 前記SiOx(0<x<2)ガスは、SiとSiO2とを1,000℃~1,800℃の範囲で蒸発させて製造され、前記Mgガスは、800℃~1,600℃の範囲でMgを蒸発させて製造される、請求項5に記載の負極活物質の製造方法。
- 前記SiOx(0<x<2)ガスとMgガスとの反応が、800~1,800℃で行われる、請求項5に記載の負極活物質の製造方法。
- 前記粉砕されたケイ素酸化物複合体に炭素系物質原料ガスを注入し、800℃~1,150℃で熱処理する、請求項5に記載の負極活物質の製造方法。
- 負極用集電体と、前記負極用集電体の少なくとも一面に位置し、請求項1から請求項4のいずれか一項に記載の負極活物質を含む負極活物質層と、を備える、負極。
- 請求項9に記載の負極を含む、リチウム二次電池。
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