JP2022046239A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2022046239A JP2022046239A JP2020152177A JP2020152177A JP2022046239A JP 2022046239 A JP2022046239 A JP 2022046239A JP 2020152177 A JP2020152177 A JP 2020152177A JP 2020152177 A JP2020152177 A JP 2020152177A JP 2022046239 A JP2022046239 A JP 2022046239A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 251
- 239000011347 resin Substances 0.000 claims abstract description 85
- 229920005989 resin Polymers 0.000 claims abstract description 85
- 238000010586 diagram Methods 0.000 description 19
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
図1(a)および(b)は、第1実施形態に係る半導体装置1Aを示す模式図である。図1(a)は、図1(b)中に示すA-A線に沿った断面図である。図1(b)は、半導体装置1Aの上面を示す平面図である。
図7(a)および(b)は、第2実施形態に係る半導体装置3Aを示す模式図である。図7(a)は、樹脂層50を除いた半導体装置3Aの上面を表す平面図である。図7(b)は、センサ素子60Bを示す平面図である。
図11(a)および(b)は、第3実施形態に係る半導体装置5Aを示す模式図である。図11(a)は、樹脂層50を除いた半導体装置5Aの上面を表す平面図である。図11(b)は、センサ素子60Cを示す平面図である。
Claims (7)
- 半導体部と、
前記半導体部の裏面上に設けられた第1電極と、
前記半導体部の表面側に設けられ、相互に離間した複数の第2電極と、
前記半導体部と前記複数の第2電極のそれぞれとの間に設けられ、前記半導体部から第1絶縁膜により電気的に絶縁され、前記複数の第2電極のそれぞれから第2絶縁膜により電気的に絶縁された制御電極と、
前記半導体部の前記表面側を覆い、前記複数の第2電極を露出させた複数の開口を有する樹脂層であって、前記複数の開口は、それぞれ、少なくとも4つの丸められた角を有する、樹脂層と、
前記半導体部と前記樹脂層との間に設けられ、前記半導体部の前記表面の中央に位置するセンサ素子と、
を備え、
前記半導体部は、前記第1電極と前記複数の第2電極との間に延在する第1導電形の第1半導体層と、前記第1半導体層と前記複数の第2電極との間にそれぞれ設けられた第2導電形の第2半導体層と、前記第2半導体層と前記複数の第2電極との間にそれぞれ設けられた第1導電形の第3半導体層と、を含み、
前記複数の第2電極は、それぞれ、前記第2半導体層および前記第3半導体層に電気的に接続され、
前記センサ素子は、前記樹脂層の前記複数の開口のうちの少なくとも3つの開口に囲まれた領域と前記半導体部との間に設けられた半導体装置。 - 前記樹脂層の前記領域は、前記複数の開口のうちの3つの開口に囲まれ、
前記領域は、前記3つの開口のうちの2つの開口の丸められた角と、残る1つの開口の一辺の一部と、を含む外縁を有する請求項1記載の半導体装置。 - 前記樹脂層の前記領域は、前記複数の開口のうちの4つの開口に囲まれ、
前記領域は、前記4つの開口の丸められた角を含む外縁を有する請求項1記載の半導体装置。 - 前記樹脂層の前記領域の外縁に含まれる開口の角の曲率半径は、前記開口のそれ以外の角における曲率半径よりも大きい請求項1~3のいずれか1つに記載の半導体装置。
- 前記複数の開口の前記丸められた角の曲率半径は、300マイクロメートル以上である請求項1~4のいずれか1つに記載の半導体装置。
- 前記半導体層の前記表面に沿った方向における前記樹脂層の前記複数の開口の幅は、600マイクロメートル以上である請求項1~5のいずれか1つに記載の半導体装置。
- 前記樹脂層の前記複数の開口は、4つの前記丸められた角を有する略方形の形状に設けられる請求項1~6のいずれか1つに記載の半導体装置。
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JP2020152177A JP7381424B2 (ja) | 2020-09-10 | 2020-09-10 | 半導体装置 |
CN202110093260.8A CN114171471A (zh) | 2020-09-10 | 2021-01-25 | 半导体装置 |
US17/189,059 US11985897B2 (en) | 2020-09-10 | 2021-03-01 | Semiconductor device |
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JP7381424B2 JP7381424B2 (ja) | 2023-11-15 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006302977A (ja) * | 2005-04-15 | 2006-11-02 | Fuji Electric Device Technology Co Ltd | パワー半導体デバイスの温度計測装置 |
JP2018160488A (ja) * | 2017-03-22 | 2018-10-11 | トヨタ自動車株式会社 | 半導体装置 |
WO2019208755A1 (ja) * | 2018-04-27 | 2019-10-31 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
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JP4969871B2 (ja) | 2006-02-28 | 2012-07-04 | オンセミコンダクター・トレーディング・リミテッド | 集積回路製造方法 |
JP2007311771A (ja) | 2006-04-21 | 2007-11-29 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2011066371A (ja) | 2009-08-18 | 2011-03-31 | Denso Corp | 半導体装置およびその製造方法 |
DE102010038933A1 (de) | 2009-08-18 | 2011-02-24 | Denso Corporation, Kariya-City | Halbleitervorrichtung mit Halbleiterchip und Metallplatte und Verfahren zu deren Fertigung |
US10361266B2 (en) * | 2014-06-09 | 2019-07-23 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
CN107086217B (zh) * | 2016-02-16 | 2023-05-16 | 富士电机株式会社 | 半导体装置 |
JP7135636B2 (ja) * | 2018-09-14 | 2022-09-13 | 富士電機株式会社 | 半導体装置 |
JP7450330B2 (ja) * | 2018-09-27 | 2024-03-15 | 富士電機株式会社 | 半導体素子及び半導体装置 |
JP7268330B2 (ja) * | 2018-11-05 | 2023-05-08 | 富士電機株式会社 | 半導体装置および製造方法 |
JP7109650B2 (ja) * | 2019-02-18 | 2022-07-29 | 三菱電機株式会社 | 電力用半導体装置および電力変換装置 |
CN113544824A (zh) * | 2019-09-05 | 2021-10-22 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
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- 2021-01-25 CN CN202110093260.8A patent/CN114171471A/zh active Pending
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006302977A (ja) * | 2005-04-15 | 2006-11-02 | Fuji Electric Device Technology Co Ltd | パワー半導体デバイスの温度計測装置 |
JP2018160488A (ja) * | 2017-03-22 | 2018-10-11 | トヨタ自動車株式会社 | 半導体装置 |
WO2019208755A1 (ja) * | 2018-04-27 | 2019-10-31 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
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JP7381424B2 (ja) | 2023-11-15 |
US20220077230A1 (en) | 2022-03-10 |
CN114171471A (zh) | 2022-03-11 |
US11985897B2 (en) | 2024-05-14 |
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