JP7231427B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7231427B2 JP7231427B2 JP2019021248A JP2019021248A JP7231427B2 JP 7231427 B2 JP7231427 B2 JP 7231427B2 JP 2019021248 A JP2019021248 A JP 2019021248A JP 2019021248 A JP2019021248 A JP 2019021248A JP 7231427 B2 JP7231427 B2 JP 7231427B2
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- 239000004065 semiconductor Substances 0.000 title claims description 136
- 239000010410 layer Substances 0.000 description 46
- 238000010586 diagram Methods 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- 239000013256 coordination polymer Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (2)
- 第1導電形の第1半導体層を含む半導体部と、
前記半導体部の裏面上に設けられた第1電極と、
前記半導体部の表面側に設けられた第2電極と、
前記半導体部の表面側に設けられ、前記半導体部および前記第2電極から電気的に絶縁された第3電極と、
前記半導体部の前記表面に平行な第1方向に延伸する第1部分と、
前記半導体部の前記表面に平行な第2方向であって、前記第1方向と交差する第2方向に延伸する第2部分と、
を含み、前記半導体部と前記第2電極との間に位置し、前記半導体部との間には第1絶縁膜が設けられ、前記第2電極との間には第2絶縁膜が設けられた複数の制御電極と、
前記第3電極および前記複数の制御電極のそれぞれの前記第1部分に電気的に接続され、前記半導体部の前記表面に平行な第3方向であって、前記第1方向と交差する第3方向に延伸する第1制御配線と、
前記第3電極および前記複数の制御電極のそれぞれの第2部分に電気的に接続され、前記半導体部の前記表面に平行な第4方向であって、前記第2方向と交差する第4方向に延伸する第2制御配線と、
前記複数の制御電極のそれぞれにおける前記第1部分と前記第2部分との接続部の上方に位置し、前記半導体部の前記表面に沿って延伸し、前記接続部の少なくとも1つと前記第3電極を電気的に接続する第3制御配線と、
を備え、
前記半導体部は、第2導電形の第2半導体層と、第1導電形の第3半導体層と、をさらに含み、
前記第2半導体層は、前記第1半導体層と前記第2電極との間に設けられ、前記第1絶縁膜を介して前記複数の制御電極のいずれかに向き合い、
前記第3半導体層は、前記第2半導体層と前記第2電極との間に選択的に設けられ、且つ、前記第2電極に電気的に接続され、
前記複数の制御電極の前記第1部分は前記第3方向に並び、前記第2部分は前記第4方向に並ぶ、半導体装置。 - 前記半導体部内に設けられ、前記制御電極と前記第1半導体層との間に位置するフィールドプレートをさらに備え、
前記フィールドプレートは、前記制御電極に沿った方向に延伸し、前記第2電極に電気
的に接続される請求項1記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2019021248A JP7231427B2 (ja) | 2019-02-08 | 2019-02-08 | 半導体装置 |
CN201910728940.5A CN111554743B (zh) | 2019-02-08 | 2019-08-08 | 半导体装置 |
US16/543,942 US11018251B2 (en) | 2019-02-08 | 2019-08-19 | Semiconductor device |
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JP2019021248A JP7231427B2 (ja) | 2019-02-08 | 2019-02-08 | 半導体装置 |
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JP2020129595A JP2020129595A (ja) | 2020-08-27 |
JP7231427B2 true JP7231427B2 (ja) | 2023-03-01 |
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JP (1) | JP7231427B2 (ja) |
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JP7249269B2 (ja) * | 2019-12-27 | 2023-03-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP7319754B2 (ja) * | 2020-08-19 | 2023-08-02 | 株式会社東芝 | 半導体装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002533936A (ja) | 1998-12-18 | 2002-10-08 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 溝型のゲート電極および本体領域内で付加的に高度にドープされた層を有する電界効果型トランジスタ装置 |
JP2010182985A (ja) | 2009-02-09 | 2010-08-19 | Toyota Motor Corp | 半導体装置 |
JP2017017078A (ja) | 2015-06-29 | 2017-01-19 | 株式会社東芝 | 半導体装置 |
JP2017162909A (ja) | 2016-03-08 | 2017-09-14 | 株式会社東芝 | 半導体装置 |
JP2018078153A (ja) | 2016-11-07 | 2018-05-17 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (10)
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JPS5011843B1 (ja) | 1970-10-29 | 1975-05-07 | ||
JP3410949B2 (ja) | 1998-02-12 | 2003-05-26 | 株式会社東芝 | 半導体装置 |
JP3455414B2 (ja) | 1998-03-17 | 2003-10-14 | 株式会社東芝 | 絶縁ゲート型半導体装置及びその製造方法 |
JP2006202931A (ja) * | 2005-01-20 | 2006-08-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5011843B2 (ja) | 2006-06-22 | 2012-08-29 | 株式会社デンソー | 半導体装置 |
KR20150066517A (ko) * | 2012-10-17 | 2015-06-16 | 후지 덴키 가부시키가이샤 | 반도체 장치 |
JP2016040820A (ja) * | 2013-09-20 | 2016-03-24 | サンケン電気株式会社 | 半導体装置 |
JP2016062981A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6668798B2 (ja) | 2015-07-15 | 2020-03-18 | 富士電機株式会社 | 半導体装置 |
US10332990B2 (en) | 2015-07-15 | 2019-06-25 | Fuji Electric Co., Ltd. | Semiconductor device |
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2019
- 2019-02-08 JP JP2019021248A patent/JP7231427B2/ja active Active
- 2019-08-08 CN CN201910728940.5A patent/CN111554743B/zh active Active
- 2019-08-19 US US16/543,942 patent/US11018251B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002533936A (ja) | 1998-12-18 | 2002-10-08 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 溝型のゲート電極および本体領域内で付加的に高度にドープされた層を有する電界効果型トランジスタ装置 |
JP2010182985A (ja) | 2009-02-09 | 2010-08-19 | Toyota Motor Corp | 半導体装置 |
JP2017017078A (ja) | 2015-06-29 | 2017-01-19 | 株式会社東芝 | 半導体装置 |
JP2017162909A (ja) | 2016-03-08 | 2017-09-14 | 株式会社東芝 | 半導体装置 |
JP2018078153A (ja) | 2016-11-07 | 2018-05-17 | トヨタ自動車株式会社 | 半導体装置 |
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US20200259015A1 (en) | 2020-08-13 |
CN111554743B (zh) | 2023-09-15 |
CN111554743A (zh) | 2020-08-18 |
US11018251B2 (en) | 2021-05-25 |
JP2020129595A (ja) | 2020-08-27 |
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