JP2020129595A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 150
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 46
- 238000010586 diagram Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 8
- 239000013256 coordination polymer Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
Description
Claims (7)
- 第1導電形の第1半導体層を含む半導体部と、
前記半導体部の裏面上に設けられた第1電極と、
前記半導体部の表面側に設けられた第2電極と、
前記半導体部の表面側に設けられ、前記半導体部および前記第2電極から電気的に絶縁された第3電極と、
前記半導体部と前記第2電極との間において、前記半導体部の表面側に設けられたトレンチの内部に配置され、前記第3電極に電気的に接続された制御電極と、
を備え、
前記制御電極は、第1絶縁膜を介して前記半導体部から電気的に絶縁され、第2絶縁膜を介して前記第2電極から電気的に絶縁され、
前記半導体部は、第2導電形の第2半導体層と、第1導電形の第3半導体層と、をさらに含み、
前記第2半導体層は、前記第1半導体層と前記第2電極との間に設けられ、前記第1絶縁膜を介して前記制御電極に向き合い、
前記第3半導体層は、前記第2半導体層と前記第2電極との間に選択的に設けられ、且つ、前記第2電極に電気的に接続され、
前記制御電極は、前記トレンチ内で分岐することなく連続して延在し、前記半導体部の前記表面に平行な方向に延伸する第1部分および第2部分を含み、
前記第1部分は第1方向に延伸し、前記第2部分は前記第1方向と交差する第2方向に延伸した半導体装置。 - 前記制御電極は、複数設けられ、
前記複数の制御電極の第1部分は、前記半導体部の前記表面に平行な第3方向であって前記第1方向と直交する第3方向に並び、前記複数の制御電極の第2部分は、前記半導体部の前記表面に平行な第4方向であって前記第2方向と直交する第4方向に並ぶ請求項1記載の半導体装置。 - 前記第3方向に延在し、前記第3電極および前記複数の制御電極の第1部分に電気的に接続された第1制御配線と、
前記第4方向に延在し、前記第3電極および前記複数の制御電極の第2部分に電気的に接続された第2制御配線と、
をさらに備える請求項2記載の半導体装置。 - 前記第3電極は、前記半導体部の前記表面の中央に配置された請求項3記載の半導体装置。
- 前記複数の制御電極の第1部分と前記複数の制御電極の第2部分の接続部の上方に位置し、前記半導体部の前記表面に沿って延伸する第3制御配線をさらに備え、
前記第3制御配線は、前記接続部の少なくとも1つに電気的に接続される請求項3または4に記載の半導体装置。 - 前記制御電極の前記第1部分および前記第2部分は、それぞれ複数設けられ、
前記複数の第1部分および前記複数の第2部分が一体につながった請求項1記載の半導体装置。 - 前記トレンチの内部に設けられ、前記半導体部の前記表面と直交する第5方向において、前記制御電極と前記第1半導体層との間に位置するフィールドプレートをさらに備え、
前記フィールドプレートは、前記制御電極に沿った方向に延伸し、前記第2電極に電気的に接続される請求項1〜6のいずれか1つに記載の半導体装置。
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CN201910728940.5A CN111554743B (zh) | 2019-02-08 | 2019-08-08 | 半导体装置 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002533936A (ja) * | 1998-12-18 | 2002-10-08 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 溝型のゲート電極および本体領域内で付加的に高度にドープされた層を有する電界効果型トランジスタ装置 |
JP2010182985A (ja) * | 2009-02-09 | 2010-08-19 | Toyota Motor Corp | 半導体装置 |
JP2017017078A (ja) * | 2015-06-29 | 2017-01-19 | 株式会社東芝 | 半導体装置 |
JP2017162909A (ja) * | 2016-03-08 | 2017-09-14 | 株式会社東芝 | 半導体装置 |
JP2018078153A (ja) * | 2016-11-07 | 2018-05-17 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (10)
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---|---|---|---|---|
JPS5011843B1 (ja) | 1970-10-29 | 1975-05-07 | ||
JP3410949B2 (ja) | 1998-02-12 | 2003-05-26 | 株式会社東芝 | 半導体装置 |
JP3455414B2 (ja) | 1998-03-17 | 2003-10-14 | 株式会社東芝 | 絶縁ゲート型半導体装置及びその製造方法 |
JP2006202931A (ja) * | 2005-01-20 | 2006-08-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5011843B2 (ja) | 2006-06-22 | 2012-08-29 | 株式会社デンソー | 半導体装置 |
CN104221153B (zh) * | 2012-10-17 | 2017-05-10 | 富士电机株式会社 | 半导体装置 |
JP2016040820A (ja) * | 2013-09-20 | 2016-03-24 | サンケン電気株式会社 | 半導体装置 |
JP2016062981A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6668798B2 (ja) | 2015-07-15 | 2020-03-18 | 富士電機株式会社 | 半導体装置 |
US10332990B2 (en) | 2015-07-15 | 2019-06-25 | Fuji Electric Co., Ltd. | Semiconductor device |
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- 2019-08-08 CN CN201910728940.5A patent/CN111554743B/zh active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002533936A (ja) * | 1998-12-18 | 2002-10-08 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 溝型のゲート電極および本体領域内で付加的に高度にドープされた層を有する電界効果型トランジスタ装置 |
JP2010182985A (ja) * | 2009-02-09 | 2010-08-19 | Toyota Motor Corp | 半導体装置 |
JP2017017078A (ja) * | 2015-06-29 | 2017-01-19 | 株式会社東芝 | 半導体装置 |
JP2017162909A (ja) * | 2016-03-08 | 2017-09-14 | 株式会社東芝 | 半導体装置 |
JP2018078153A (ja) * | 2016-11-07 | 2018-05-17 | トヨタ自動車株式会社 | 半導体装置 |
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