JP2021520643A - 核生成層の堆積方法 - Google Patents
核生成層の堆積方法 Download PDFInfo
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- 230000006911 nucleation Effects 0.000 title claims abstract description 52
- 238000010899 nucleation Methods 0.000 title claims abstract description 52
- 238000000151 deposition Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 60
- 239000003999 initiator Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000007858 starting material Substances 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 229910021480 group 4 element Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000005137 deposition process Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- -1 aluminum compound Chemical class 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
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Abstract
Description
本発明の好ましい形態では、基板が、(111)又は(110)配向を有するシリコン基板である。III主族の元素は、アルミニウムとすることができるが、ゲルマニウム又はインジウムとすることもでき、V主族の元素は、窒素とすることができるが、ヒ素又はリンとすることもできる。第1のガス状開始物質は、アルミニウム、ガリウム、又はインジウムを含む有機金属化合物、例えばTMAlとすることができる。第2のガス状開始物質は、V族−水素−化合物、特に窒素−水素−化合物とすることができ、例えばNH3である。核生成層が堆積され、好ましくはアルミニウムと窒素が1:1の比で組み込まれるプロセス温度は、800〜1200℃の範囲である。堆積プロセスは、30〜300mbarの全圧で行われる。好ましい形態において、第1のガス状開始物質に対する第2のガス状開始物質のモル比が、好ましくはアルミニウム化合物に対する窒素化合物のモル比が、およそ10〜5000である。第1のガス状開始物質(III主族)の分圧を介して調整される核生成層の成長速度は、好ましくは0.01〜2μm/hである。
本発明によれば、結晶マトリクスを形成する2つのガス状開始物質に加えて、第3のガス状開始物質がプロセスチャンバに供給され、その結果、n−ドーピング、特に弱いn−ドーピングを生じさせ、層内のドーパント濃度が1×1019cm−3よりも低くなる。ドーパントの機能を有するこの第3の開始物質は、核生成層の堆積の全期間に亘って供給することも、核生成層の堆積の開始時にのみ部分的に供給することもできる。適切な開始物質は、シリコン又はゲルマニウムの水素化物である。第3のガス状開始物質は、例えば、SinH2n+2又はGenH2n+2の構造式に対応することができる。原則的に、シリコン又はゲルマニウムを含むどのようなガス状開始物質でもよい。プロセスチャンバ内の第3のガス状開始物質の分圧又は第3のガス状開始物質のガスフローは、好ましくは、ドーパントレベルが1×1017〜1×1018cm−3の範囲内であるように調整される。
好ましい方法では、TMAl及びNH3と共に例えばシラン又はゲルマンである水素化シリコン化合物又は水素化ゲルマニウム化合物をプロセスチャンバに供給することによって、シリコン基板の表面上にAlN核生成層が形成される。
a)ドーピングされていないAlN
b)1×1018cm−1でドーピングされたAlN、又は
c)2×1017cm−1でドーピングされたAlN、
d)5×1017cm−1でドーピングされたAlN
が示されている。
2 表面
3 核生成層
4 バッファ層
5 界面
6 活性層
7 リアクタ
8 プロセスチャンバ
9 サセプタ
10 加熱装置
11 ガス入口部材
a)ドーピングされていないAlN
b)1×1018cm−3 でドーピングされたAlN、又は
c)2×1017cm−3 でドーピングされたAlN、
d)5×1017cm−3 でドーピングされたAlN
が示されている。
Claims (12)
- III主族及びV主族の元素を含む核生成層(3)をIV主族の元素を含む基板(1)の表面(2)上に直接堆積するための方法であって、III主族の元素を含む第1のガス状開始物質と共にV主族の元素を含む第2のガス状開始物質が500℃を超えるプロセス温度で前記基板(1)を収容するプロセスチャンバ(8)に導入され、前記核生成層(3)の堆積の少なくとも開始時に、前記第1及び第2のガス状開始物質と共にIV主族の元素を含むガス状開始物質が前記プロセスチャンバ(8)に供給される、前記方法において、
前記プロセスチャンバ(8)内の前記第3のガス状開始物質の分圧又はマスフローが、最大1×1018cm−3のドーピングを生じさせるように選択されることを特徴とする方法。 - 前記プロセス温度が、800℃〜1200℃の範囲、好ましくは950℃〜1050℃の範囲にあることを特徴とする請求項1に記載の方法。
- 前記核生成層(3)が、30〜300mbarの範囲の全圧で堆積されることを特徴とする前出請求項の1つに記載の方法。
- 前記第1のガス状開始物質に対する前記第2のガス状開始物質のモル比が、10〜5000の範囲にあることを特徴とする前出請求項の1つに記載の方法。
- 前記第3のガス状開始物質の追加により、1×1017〜1×1018×cm−3の範囲の前記核生成層のn−ドーピングが得られることを特徴とする前出請求項の1つに記載の方法。
- 前記基板(1)がシリコン又はゲルマニウムからなり、かつ/又は、前記第3のガス状開始物質がSinH2n+2若しくはGenH2n+2、又は、シリコン若しくはゲルマニウムを含む他のガス状開始物質であることを特徴とする前出請求項の1つに記載の方法。
- 前記III主族の元素がAlであり、かつ/又は、前記第1のガス状開始物質がTMAlであることを特徴とする前出請求項の1つに記載の方法。
- 前記V主族の元素が窒素であり、かつ/又は、前記第2のガス状開始物質がNH3であることを特徴とする前出請求項の1つに記載の方法。
- 前記核生成層(3)上に特にAlNからなるバッファ層(4)が堆積され、かつ、前記バッファ層(4)上に活性層(6)が堆積されることによって活性層(6)と(バッファ層(4)との間の界面(5)に二次元電子ガスを形成すること、及び/又は、前記第3のガス状開始物質の供給が高周波減衰の減衰値を低減させることを特徴とする前出請求項の1つに記載の方法。
- 前出請求項の1つに記載の方法により作製される層シーケンスであって、IV主族の元素を含む基板(1)の表面(2)上にIV主族及びV主族の元素を含む核生成層(3)が堆積され、前記核生成層(3)は、少なくとも前記表面(2)上に直接隣接する領域においてIV主族の元素でドーピングされることを特徴とする層シーケンス。
- 前記核生成層(3)上に少なくともバッファ層(4)が堆積され、その上に活性層(6)もまた堆積されることによってバッファ層(4)と活性層(6)との間の界面(5)上に二次元電子ガスを形成することを特徴とする請求項11に記載の層シーケンス。
- 前出請求項の特徴の1又は複数を特徴とする方法又は層シーケンス。
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