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  • H01L21/02518—Deposited layers
  • H01L21/0257—Doping during depositing
  • H01L21/02573—Conductivity type
  • H01L21/02576—N-type
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  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/02—Pretreatment of the material to be coated
  • C23C16/0209—Pretreatment of the material to be coated by heating
  • C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
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  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C23C16/303—Nitrides
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  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
  • C30B25/16—Controlling or regulating
  • C30B25/165—Controlling or regulating the flow of the reactive gases
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  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
  • C30B25/18—Epitaxial-layer growth characterised by the substrate
  • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/10—Inorganic compounds or compositions
  • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C30B29/403—AIII-nitrides
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  • H01L21/02367—Substrates
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  • H01L21/02373—Group 14 semiconducting materials
  • H01L21/02381—Silicon, silicon germanium, germanium
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  • H01L21/02436—Intermediate layers between substrates and deposited layers
  • H01L21/02439—Materials
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  • H01L21/02494—Structure
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  • H01L21/02656—Special treatments
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  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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  • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66007—Multistep manufacturing processes
  • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
  • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
  • H01L29/66409—Unipolar field-effect transistors
  • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
  • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
  • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Definitions

• the invention relates to a method for depositing a nucleation layer consisting of elements of the III and V main groups directly on the surface of a substrate of an element of the main group IV, together with one containing the element of the III main group first gaseous starting material, a second gaseous starting material containing the element of the V main group is brought into a process chamber containing the substrate at a process temperature of greater than 500 ° C. At least at the beginning of the deposition of the nucleation layer, a gaseous starting material containing an element of the V main group is additionally fed into the process chamber, which effects doping in the layer.
• the invention further relates to a layer sequence produced by the method, in particular an HFET transistor.
• JP 2013030725 A A generic method is described in JP 2013030725 A.
• silicon is to be incorporated into the nucleation layer as a dopant in a high concentration in order to suppress mechanical bending.
• HFETs High Electron Mobility Transistor
• heterostructure field-effect transistors consist of a layer sequence in which a nucleation layer of A1N is first deposited on a silicon substrate. On the nucleation layer, a buffer layer of GaN is deposited. On the buffer layer, an AlGaN layer is deposited as an active layer, so a two-dimensional electron gas is formed between the active layer and the buffer layer.
• a third gaseous starting material is fed into the process chamber together with the first and second gaseous starting material, the third gaseous starting material exhibiting a certain doping effect.
• the first and the second gaseous starting material are fed into the process chamber such that a stoichiometrically correct multicomponent crystal, in particular III-V crystal, is deposited on the surface of the substrate.
• the substrate is a silicon substrate with a (111) or (llO) orientation.
• the Ele- of the III main group may be aluminum, but also gallium or indium; the element of the V main group can be nitrogen, but also arsenic or phosphorus.
• the first gaseous starting material may be an aluminum, gallium or indium-containing organometallic compound, for example TMA1.
• the second gaseous starting material may be a V-hydrogen compound, in particular a nitrogen-hydrogen compound, for example NEh.
• the process temperatures at which the nucleation layer is deposited, in which preferably aluminum and nitrogen are incorporated in a 1: 1 ratio, are in the range between 800 and 1200 ° C.
• the deposition process is carried out at a total pressure of 30 to 300 mbar.
• the molar ratio of di- th gaseous starting material for the first gaseous starting material ie preferably Getting Connected of the nitrogen to the aluminum compound V, about 10 to 5,000.
• the growth rate of the nucleation layer set via the partial pressure of the first gaseous starting material (III main group) is preferably between 0.01 and 2 gm / h.
• a third gaseous starting material is fed into the process chamber, which results in an n-doping, in particular a weak n-doping, the dopant concentration in the layer being lower as lxl0 19 cnr 3 .
• This third starting material which has the function of a dopant, can be fed both over the entire duration of the deposition of the nucleation layer and only partially at the beginning of the deposition of the nucleation layer.
• Suitable starting materials are the water compounds of silicon or germanium.
• the third gaseous starting material may correspond, for example, to the structural formula Si n H 2n + 2 or Ge n H 2n + 2. In principle, any silicon or germanium-containing gaseous starting material comes into consideration.
• the partial pressure of the third gaseous starting material or the gas flow of the third gaseous starting material into the process chamber is preferably set such that the dopant level is in the range of 1 ⁇ 10 17 to 1 x 10 18 cnr 3 lies.
• an AlN nucleation layer is applied to the surface of a silicon substrate by feeding together with TM Al and NTh a silicon hydrogen compound or a germanium hydrogen compound, for example silane or german, into the process chamber.
• a buffer layer be deposited on the nucleation layer which consists of the material system of the group III nitrides, in particular AlN, GaN, InN, AlGaN, InGaN or AlInGaN.
• the further layers can also be doped.
• one or more active layers may be deposited on the at least one buffer layer, which are necessary for generating a heterostructure field effect transistor with a two-dimensional electron gas between, for example, an active layer and the buffer layer or between two active layers.
• active layers may be deposited on the at least one buffer layer, which are necessary for generating a heterostructure field effect transistor with a two-dimensional electron gas between, for example, an active layer and the buffer layer or between two active layers.
• GaN / AlN, GaN / AlGaN, GaN / AlInn, InGaN / AlN, InGaN / GaN and / or InGaN / AlInH heterostructures are suitable.
• the invention further relates to a layer sequence produced by the method consisting of a III-V nucleation layer deposited on a silicon substrate and doped with an element of the V main group.
• the nucleation layer carries at least one buffer layer of one III-V material.
• a two-dimensional electron gas is created between a buffer layer and an active layer.
• 1 schematically shows the layer structure of a high-electron mobility transistor
• FIG. 2 schematically shows a CVD reactor for depositing the layer sequence shown in FIG. 1 and FIG. 2
• A1N / Si structure with different dopants in the A1N layer with different dopants in the A1N layer.
• FIG. 1 shows schematically the structure of a HEMT, in which on the surface 2 of a silicon substrate 1, a nucleation layer 3 has been deposited. Before depositing the nucleation layer 3, the surface 2 of the silicon substrate 1 is appropriately prepared.
• the actual epitaxial deposition of the AlN nucleation S chicht 3 is carried out by simultaneous introduction of TMA1 and NEE.
• the nucleation layer 3 can be deposited in a multi-stage process, whereby the temperature, the pressure and the gas flows can be changed.
• the temperature range for the deposition of the nucleation layer 3 is typically in the range between 800 and 1200 ° C., the total pressure inside the process chamber 8 being in the range between 30 and 300 mbar.
• the gaseous starting materials are fed into the process chamber 8 together with a carrier gas, for example hydrogen, through a gas inlet element 11.
• a carrier gas for example hydrogen
• one or more substrates 1, which are coated with the nucleation layer 3 are located on a susceptor 9 heated by a heating device 10.
• Gaseinlassor- gan 11 are in a molar ratio of V starting material to starting material III in the range from 10 to 5000, the gaseous precursors fed into the process chamber 8 and in particular TMA1 and NH 3.
• the flow rates of the gaseous starting materials are adjusted so that the growth rate of the AlN nucleation layer 3 is in the range between 0.01 and 2 gm / h.
• This third gaseous starting material is preferably silane or germanium with the structural formula Si n H 2n + 2 or Ge n H 2n + 2.
• Figure 3 shows a significant reduction in the attenuation at dopant concentrations of 2 x 10 17 cm 1 and 5 x 10 c 1 , whereas at a higher doping of 1 x 10 18 cm 1, the attenuation increases again and about the value of undoped A1N occupies.
• a GaN buffer layer 4 and then an active AlGaN layer 6 are then deposited in a known manner, so that a two-dimensional electron gas is formed at the interface 5 between the buffer layer 4 and the active layer 6.
• gate contacts, source contacts and drain contacts are produced in a known manner.
• a process characterized in that the process temperature is in a range between 800 ° C and 1200 ° C, preferably between 950 ° C and 1050 ° C.
• Main group is nitrogen and / or the second gaseous starting material is NEE.
• a method which is characterized in that a buffer layer 4, in particular of AlN, is deposited on the nucleation layer 3 and an active layer 6 is deposited on the buffer layer 4 in such a way that at the interface 5 between the active layer 6 and Buffer layer 4 forms a two-dimensional electron gas and / or that the feed of the third gaseous starting material reduces the attenuation value of a high-frequency attenuation.
• a layer sequence which is characterized in that a

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• Junction Field-Effect Transistors (AREA)
• Chemical Vapour Deposition (AREA)

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• 2018
  • 2018-04-11 DE DE102018108604.0A patent/DE102018108604A1/de active Pending
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