JP2021518053A5 - - Google Patents
Info
- Publication number
- JP2021518053A5 JP2021518053A5 JP2020540739A JP2020540739A JP2021518053A5 JP 2021518053 A5 JP2021518053 A5 JP 2021518053A5 JP 2020540739 A JP2020540739 A JP 2020540739A JP 2020540739 A JP2020540739 A JP 2020540739A JP 2021518053 A5 JP2021518053 A5 JP 2021518053A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polysilicon layer
- polysilicon
- substrate
- back side
- Prior art date
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862620777P | 2018-01-23 | 2018-01-23 | |
| US62/620,777 | 2018-01-23 | ||
| US16/028,862 US10559650B2 (en) | 2018-01-23 | 2018-07-06 | Trench capacitor with warpage reduction |
| US16/028,862 | 2018-07-06 | ||
| PCT/US2019/014521 WO2019147558A1 (en) | 2018-01-23 | 2019-01-22 | Trench capacitor with warpage reduction |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2021518053A JP2021518053A (ja) | 2021-07-29 |
| JP2021518053A5 true JP2021518053A5 (https=) | 2022-03-23 |
| JPWO2019147558A5 JPWO2019147558A5 (https=) | 2022-03-23 |
| JP7298852B2 JP7298852B2 (ja) | 2023-06-27 |
Family
ID=67300147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020540739A Active JP7298852B2 (ja) | 2018-01-23 | 2019-01-22 | 反り低減トレンチコンデンサ |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10559650B2 (https=) |
| JP (1) | JP7298852B2 (https=) |
| CN (1) | CN111630655B (https=) |
| WO (1) | WO2019147558A1 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018206061A1 (de) * | 2018-04-20 | 2019-10-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hochvolt-Kondensator zur Integration in elektrische Leistungsmodule sowie Verfahren zur Herstellung |
| EP3680934A1 (en) * | 2019-01-08 | 2020-07-15 | Murata Manufacturing Co., Ltd. | Rc architectures, and methods of fabrication thereof |
| EP3761357A1 (en) * | 2019-07-04 | 2021-01-06 | Infineon Technologies Austria AG | Semiconductor device |
| CN113035688B (zh) * | 2019-12-09 | 2023-02-28 | 华润微电子（重庆）有限公司 | 一种半导体结构及其制作方法 |
| JP7561541B2 (ja) * | 2020-08-25 | 2024-10-04 | ラピスセミコンダクタ株式会社 | 半導体装置及び半導体装置の製造方法 |
| CN114188480B (zh) * | 2020-09-14 | 2025-07-29 | 安徽寒武纪信息科技有限公司 | 一种电容器结构及其形成电容器结构的方法 |
| CN112289739B (zh) * | 2020-10-28 | 2021-09-24 | 长江存储科技有限责任公司 | 一种三维存储器及其接触插塞的制造方法 |
| CN112563194B (zh) * | 2020-12-04 | 2021-09-10 | 武汉新芯集成电路制造有限公司 | 半导体结构及其制造方法 |
| CN114678469A (zh) * | 2020-12-24 | 2022-06-28 | 中芯国际集成电路制造(北京)有限公司 | 半导体结构及其形成方法 |
| US11888021B2 (en) | 2021-06-17 | 2024-01-30 | Texas Instruments Incorporated | Reduced ESR in trench capacitor |
| WO2022266995A1 (en) * | 2021-06-25 | 2022-12-29 | Texas Instruments Incorporated | Multi-layer polysilicon stack for semiconductor devices |
| KR102699101B1 (ko) * | 2021-07-09 | 2024-08-23 | 에스케이키파운드리 주식회사 | 웨이퍼 휨 현상이 개선된 트렌치 커패시터 제조방법 |
| CN113964023B (zh) * | 2021-12-21 | 2022-03-04 | 广州粤芯半导体技术有限公司 | 半导体器件的制备方法 |
| TWI799061B (zh) * | 2022-01-07 | 2023-04-11 | 力晶積成電子製造股份有限公司 | 電容器結構及其製造方法 |
| US20230260894A1 (en) * | 2022-02-17 | 2023-08-17 | Mediatek Inc. | Semiconductor device with integrated deep trench capacitors |
| CN115206792B (zh) * | 2022-07-28 | 2026-02-06 | 华虹半导体(无锡)有限公司 | 改善晶圆翘曲的方法 |
| CN115241162A (zh) * | 2022-08-26 | 2022-10-25 | 上海华虹宏力半导体制造有限公司 | 一种深沟槽电容器及其制造方法 |
| JP2024111625A (ja) * | 2023-02-06 | 2024-08-19 | 株式会社東芝 | 半導体装置 |
| US20240429260A1 (en) * | 2023-06-21 | 2024-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming a back side film stack and package structures thereof |
| CN117334568B (zh) * | 2023-09-14 | 2024-06-18 | 中晶新源(上海)半导体有限公司 | 一种功率器件的形成方法及功率器件 |
| US20250259919A1 (en) * | 2024-02-12 | 2025-08-14 | Qualcomm Incorporated | Package comprising a substrate and a passive device |
| EP4618160A1 (en) * | 2024-03-11 | 2025-09-17 | Murata Manufacturing Co., Ltd. | Electrical device for high voltage applications |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0563155A (ja) * | 1991-08-30 | 1993-03-12 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
| US5863598A (en) * | 1996-04-12 | 1999-01-26 | Applied Materials, Inc. | Method of forming doped silicon in high aspect ratio openings |
| US6236079B1 (en) | 1997-12-02 | 2001-05-22 | Kabushiki Kaisha Toshiba | Dynamic semiconductor memory device having a trench capacitor |
| KR100317534B1 (ko) * | 2000-01-05 | 2001-12-24 | 윤종용 | 커패시터 및 그 제조방법 |
| JP2001351895A (ja) | 2000-06-09 | 2001-12-21 | Denso Corp | 半導体装置の製造方法 |
| TW452879B (en) | 2000-07-27 | 2001-09-01 | Promos Technologies Inc | Method for removing polishing stop layer |
| JP2002324773A (ja) * | 2001-04-25 | 2002-11-08 | Nec Corp | 半導体装置の製造方法 |
| JP2002359209A (ja) | 2001-05-31 | 2002-12-13 | Sony Corp | 半導体装置およびその製造方法 |
| TW540154B (en) | 2001-06-04 | 2003-07-01 | Promos Technologies Inc | Deep trench capacitor structure and its manufacturing method |
| JP4322150B2 (ja) | 2004-03-15 | 2009-08-26 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7410862B2 (en) * | 2006-04-28 | 2008-08-12 | International Business Machines Corporation | Trench capacitor and method for fabricating the same |
| WO2007125510A2 (en) | 2006-05-02 | 2007-11-08 | Nxp B.V. | Electric device comprising an improved electrode with a pillar having protrusions or scores for enhanced stability |
| US7351634B2 (en) | 2006-05-25 | 2008-04-01 | United Microelectronics Corp. | Trench-capacitor DRAM device and manufacture method thereof |
| EP3043381B1 (en) * | 2007-05-10 | 2019-05-22 | Murata Integrated Passive Solutions | Integration substrate with a ultra-high-density capacitor and a through-substrate via |
| JP5612268B2 (ja) | 2008-03-28 | 2014-10-22 | 株式会社東芝 | 半導体装置及びｄｃ−ｄｃコンバータ |
| US20100244109A1 (en) | 2009-03-30 | 2010-09-30 | Niko Semiconductor Co., Ltd. | Trenched metal-oxide-semiconductor device and fabrication thereof |
| KR101801406B1 (ko) | 2011-02-12 | 2017-11-24 | 엔엑스피 유에스에이, 인코포레이티드 | 반도체 장치 및 관련 제조 방법 |
| TWI529939B (zh) | 2012-02-08 | 2016-04-11 | 新力股份有限公司 | High frequency semiconductor device and its manufacturing method |
| US9209190B2 (en) * | 2013-06-25 | 2015-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench capacitor |
| US9401410B2 (en) * | 2014-11-26 | 2016-07-26 | Texas Instruments Incorporated | Poly sandwich for deep trench fill |
| US10134830B2 (en) | 2016-09-13 | 2018-11-20 | Texas Instruments Incorporated | Integrated trench capacitor |
| US10276651B2 (en) * | 2017-09-01 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low warpage high density trench capacitor |
-
2018
- 2018-07-06 US US16/028,862 patent/US10559650B2/en active Active
-
2019
- 2019-01-22 JP JP2020540739A patent/JP7298852B2/ja active Active
- 2019-01-22 CN CN201980009702.7A patent/CN111630655B/zh active Active
- 2019-01-22 WO PCT/US2019/014521 patent/WO2019147558A1/en not_active Ceased
-
2020
- 2020-01-28 US US16/774,014 patent/US11271072B2/en active Active
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