JP7298852B2 - 反り低減トレンチコンデンサ - Google Patents

反り低減トレンチコンデンサ Download PDF

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JP7298852B2
JP7298852B2 JP2020540739A JP2020540739A JP7298852B2 JP 7298852 B2 JP7298852 B2 JP 7298852B2 JP 2020540739 A JP2020540739 A JP 2020540739A JP 2020540739 A JP2020540739 A JP 2020540739A JP 7298852 B2 JP7298852 B2 JP 7298852B2
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layer
polysilicon layer
polysilicon
forming
substrate
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Japanese (ja)
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JP2021518053A5 (https=
JPWO2019147558A5 (https=
JP2021518053A (ja
Inventor
ジア ジャオ
フェン ジーペン
リン ヘ
リウ ユンロン
ジェイン マノイ
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テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/466—Tape carriers or flat leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
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    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
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    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
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    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
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    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
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    • H10W70/411—Chip-supporting parts, e.g. die pads
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    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
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    • H10W90/769—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a laterally-adjacent discrete passive device

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  • Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2020540739A 2018-01-23 2019-01-22 反り低減トレンチコンデンサ Active JP7298852B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862620777P 2018-01-23 2018-01-23
US62/620,777 2018-01-23
US16/028,862 US10559650B2 (en) 2018-01-23 2018-07-06 Trench capacitor with warpage reduction
US16/028,862 2018-07-06
PCT/US2019/014521 WO2019147558A1 (en) 2018-01-23 2019-01-22 Trench capacitor with warpage reduction

Publications (4)

Publication Number Publication Date
JP2021518053A JP2021518053A (ja) 2021-07-29
JP2021518053A5 JP2021518053A5 (https=) 2022-03-23
JPWO2019147558A5 JPWO2019147558A5 (https=) 2022-03-23
JP7298852B2 true JP7298852B2 (ja) 2023-06-27

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