CN111630655B - 翘曲减少的沟槽电容 - Google Patents

翘曲减少的沟槽电容 Download PDF

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Publication number
CN111630655B
CN111630655B CN201980009702.7A CN201980009702A CN111630655B CN 111630655 B CN111630655 B CN 111630655B CN 201980009702 A CN201980009702 A CN 201980009702A CN 111630655 B CN111630655 B CN 111630655B
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layer
polysilicon layer
polysilicon
trenches
trench
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Chinese (zh)
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CN111630655A (zh
Inventor
贾骄
Z·冯
H·林
刘运龙
M·贾因
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Texas Instruments Inc
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Texas Instruments Inc
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  • Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201980009702.7A 2018-01-23 2019-01-22 翘曲减少的沟槽电容 Active CN111630655B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862620777P 2018-01-23 2018-01-23
US62/620,777 2018-01-23
US16/028,862 US10559650B2 (en) 2018-01-23 2018-07-06 Trench capacitor with warpage reduction
US16/028,862 2018-07-06
PCT/US2019/014521 WO2019147558A1 (en) 2018-01-23 2019-01-22 Trench capacitor with warpage reduction

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CN111630655A CN111630655A (zh) 2020-09-04
CN111630655B true CN111630655B (zh) 2025-05-16

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JP (1) JP7298852B2 (https=)
CN (1) CN111630655B (https=)
WO (1) WO2019147558A1 (https=)

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