JP2021515392A - セラミックベースプレートを備えるマルチプレート静電チャック - Google Patents
セラミックベースプレートを備えるマルチプレート静電チャック Download PDFInfo
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract
Description
本願は、2018年2月23日出願の米国実用特許出願第15/903,682の優先権を主張する。上記出願の全ての開示は、参照として本明細書に援用される。
Claims (28)
- 基板処理システムのための静電チャックであって、
基板に静電気的にクランプするように構成され、セラミックで形成されたトッププレートと、
前記トッププレートの下方に配置された中間層と、
前記中間層の下方に配置され、セラミックで形成されたベースプレートと、を備え、
前記中間層は、前記トッププレートを前記ベースプレートに結合する、静電チャック。 - 請求項1に記載の静電チャックであって、
前記ベースプレートのセラミック純度は、90%以上である、静電チャック。 - 請求項1に記載の静電チャックであって、
前記ベースプレートのセラミック純度は、95%以上である、静電チャック。 - 請求項1に記載の静電チャックであって、
前記ベースプレートのセラミック純度は、99.9%以上である、静電チャック。 - 請求項1に記載の静電チャックであって、
前記ベースプレートは、
ベース層と、
前記ベース層に配置された保護被覆層と、を備え、
前記保護被覆層は、前記ベース層と前記中間層との間に配置される、静電チャック。 - 請求項1に記載の静電チャックであって、
前記ベースプレートは、第1部分および第2部分を備え、
前記第1部分は、前記第2部分から上向きに突出し、
前記中間層および前記トッププレートは、前記第1部分に配置される、静電チャック。 - 請求項1に記載の静電チャックであって、
前記ベースプレートは、1つ以上のガス流路を備え、
前記1つ以上のガス流路は、前記トッププレートの下方に配置される、静電チャック。 - 請求項1に記載の静電チャックであって、
前記ベースプレートは、第1層および第2層を備え、
前記第1層は、前記第2層の上方に配置され、
前記第1層は、第1ガス流路セットを備え、
前記第2層は、第2ガス流セットを備える、静電チャック。 - 請求項1に記載の静電チャックであって、
前記ベースプレートは、複数の無線周波数(RF)電極を備える、静電チャック。 - 請求項9に記載の静電チャックであって、
前記ベースプレートは、1つ以上のガス流路を備え、
前記複数のRF電極の1つ以上は、前記ベースプレートにおいて前記1つ以上のガス流路の上方に配置される、静電チャック。 - 請求項9に記載の静電チャックであって、
前記ベースプレートは、第1部分および第2部分を備え、
前記第1部分は、前記第2部分から上向きに突出し、
前記複数のRF電極の1つ以上は、前記ベースプレートにおいて前記第1部分の径方向外側に配置される、静電チャック。 - 請求項9に記載の静電チャックであって、さらに、
前記ベースプレートに配置され、少なくとも部分的に前記トッププレートの径方向外側に配置されたエッジリングを備え、
前記ベースプレートは、前記トッププレートに向かって上向きに延びる凸部を備え、
前記凸部は、前記ベースプレート上の前記エッジリングの中心にある、静電チャック。 - 請求項12に記載の静電チャックであって、
前記複数のRF電極の1つ以上は、前記ベースプレートにおいて前記エッジリングの下方に配置される、静電チャック。 - 請求項1に記載の静電チャックであって、さらに、
前記ベースプレート上に配置された、前記トッププレートに中心を置く、前記トッププレートの径方向外側に配置されたエッジリングを備える、静電チャック。 - 請求項1に記載の静電チャックであって、さらに、
前記ベースプレートに配置された、少なくとも部分的に前記トッププレートの径方向外側に配置されたエッジリングを備え、
前記エッジリングは、無線周波数電極または静電クランプ電極を備える、静電チャック。 - 請求項1に記載の静電チャックであって、
前記トッププレートは、1つ以上の静電クランプ電極を備える、静電チャック。 - 請求項1に記載の静電チャックであって、
前記トッププレートは、1つ以上の加熱素子を備える、静電チャック。 - 請求項1に記載の静電チャックであって、
前記ベースプレートは、1つ以上の直流電極を備える、静電チャック。 - 請求項1に記載の静電チャックであって、
前記ベースプレートは、複数の冷媒流路を備える、静電チャック。 - 請求項19に記載の静電チャックであって、
前記複数の冷媒流路の少なくとも1つは、バイファイラ配置である、静電チャック。 - 請求項19に記載の静電チャックであって、
前記複数の冷媒流路の少なくとも1つは、シングルファイラ配置である、静電チャック。 - 請求項19に記載の静電チャックであって、
前記ベースプレートは、第1層および第2層を備え、
前記複数の冷媒流路は、第1冷媒流路セットおよび第2冷媒流路セットを含み、
前記第1層は、前記第1冷媒流路セットを備え、
前記第2層は、前記第2冷媒流路セットを備える、静電チャック。 - 請求項1に記載の静電チャックであって、さらに、
前記ベースプレートの底部から前記トッププレートの出口まで延びるガス流路を備え、
前記ガス流路は、少なくとも1つの多孔質媒体を含む、静電チャック。 - 請求項1に記載の静電チャックであって、さらに、
前記中間層の径方向外側に配置された、前記中間層の保護を提供する環状シールを備える、静電チャック。 - 基板処理システムであって、
処理チャンバと、
前記処理チャンバ内に配置され、温度調節素子を含む請求項1に記載の静電チャックと、
前記トッププレートおよび前記ベースプレートの少なくとも1つに配置され、前記トッププレートの温度を検出するように構成された温度センサと、
前記温度センサの出力を受信するように構成された制御モジュールであって、前記トッププレートおよび前記ベースプレートの前記少なくとも1つの温度を調節するために、前記温度センサの前記出力に基づいてアクチュエータの動作を制御して前記1つ以上の温度調節素子の温度を調節する、制御モジュールと、
を備える、基板処理システム。 - 請求項25に記載の基板処理システムであって、
前記1つ以上の温度調節素子は、加熱素子、ガス流路、および冷媒流路のうちの少なくとも1つを含み、
前記アクチュエータは、電源、冷媒ポンプ、ガスポンプ、または弁である、基板処理システム。 - 請求項25に記載の基板処理システムであって、
前記温度センサは、前記ベースプレートに配置され、前記ベースプレートの温度を検出するように構成される、基板処理システム。 - 請求項25に記載の基板処理システムであって、さらに、
前記ベースプレートに配置され、少なくとも部分的に前記トッププレートの径方向外側に配置されたエッジリングと、
前記ベースプレートにおいて前記エッジリングの下方に配置された無線周波数電極と、を備え、
前記温度センサは、前記ベースプレートに配置され、前記ベースプレートの領域の温度を検出するように構成され、
前記ベースプレートの前記領域は、前記エッジリングの下方である、基板処理システム。
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