JP2021512504A5 - - Google Patents

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Publication number
JP2021512504A5
JP2021512504A5 JP2020561576A JP2020561576A JP2021512504A5 JP 2021512504 A5 JP2021512504 A5 JP 2021512504A5 JP 2020561576 A JP2020561576 A JP 2020561576A JP 2020561576 A JP2020561576 A JP 2020561576A JP 2021512504 A5 JP2021512504 A5 JP 2021512504A5
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JP
Japan
Prior art keywords
oxidation
substrate
silicon oxide
power
spacer layer
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JP2020561576A
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English (en)
Japanese (ja)
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JP7334185B2 (ja
JP2021512504A (ja
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Priority claimed from US15/881,506 external-priority patent/US10446394B2/en
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Publication of JP2021512504A publication Critical patent/JP2021512504A/ja
Publication of JP2021512504A5 publication Critical patent/JP2021512504A5/ja
Application granted granted Critical
Publication of JP7334185B2 publication Critical patent/JP7334185B2/ja
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JP2020561576A 2018-01-26 2019-01-22 マルチプルパターンニング処理での原子層堆積を使用するスペーサプロファイル制御 Active JP7334185B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/881,506 US10446394B2 (en) 2018-01-26 2018-01-26 Spacer profile control using atomic layer deposition in a multiple patterning process
US15/881,506 2018-01-26
PCT/US2019/014580 WO2019147583A1 (en) 2018-01-26 2019-01-22 Spacer profile control using atomic layer deposition in a multiple patterning process

Publications (3)

Publication Number Publication Date
JP2021512504A JP2021512504A (ja) 2021-05-13
JP2021512504A5 true JP2021512504A5 (https=) 2023-07-14
JP7334185B2 JP7334185B2 (ja) 2023-08-28

Family

ID=67393651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020561576A Active JP7334185B2 (ja) 2018-01-26 2019-01-22 マルチプルパターンニング処理での原子層堆積を使用するスペーサプロファイル制御

Country Status (5)

Country Link
US (1) US10446394B2 (https=)
JP (1) JP7334185B2 (https=)
KR (2) KR102818018B1 (https=)
CN (2) CN120637202A (https=)
WO (1) WO2019147583A1 (https=)

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KR102860533B1 (ko) * 2020-12-10 2025-09-17 주식회사 원익아이피에스 반도체 소자 제조 방법
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