CN120637202A - 在多重图案化处理中使用原子层沉积的间隔件轮廓控制 - Google Patents

在多重图案化处理中使用原子层沉积的间隔件轮廓控制

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Publication number
CN120637202A
CN120637202A CN202510512416.XA CN202510512416A CN120637202A CN 120637202 A CN120637202 A CN 120637202A CN 202510512416 A CN202510512416 A CN 202510512416A CN 120637202 A CN120637202 A CN 120637202A
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CN
China
Prior art keywords
silicon oxide
substrate
thickness
plasma
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202510512416.XA
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English (en)
Chinese (zh)
Inventor
米尔扎弗·阿巴查夫
傅乾
山口叶子
亚伦·埃普勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN120637202A publication Critical patent/CN120637202A/zh
Pending legal-status Critical Current

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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10P50/00—Etching of wafers, substrates or parts of devices
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    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CN202510512416.XA 2018-01-26 2019-01-22 在多重图案化处理中使用原子层沉积的间隔件轮廓控制 Pending CN120637202A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/881,506 US10446394B2 (en) 2018-01-26 2018-01-26 Spacer profile control using atomic layer deposition in a multiple patterning process
US15/881,506 2018-01-26
PCT/US2019/014580 WO2019147583A1 (en) 2018-01-26 2019-01-22 Spacer profile control using atomic layer deposition in a multiple patterning process
CN201980010351.1A CN111656488B (zh) 2018-01-26 2019-01-22 在多重图案化处理中使用原子层沉积的间隔件轮廓控制

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Publications (1)

Publication Number Publication Date
CN120637202A true CN120637202A (zh) 2025-09-12

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CN201980010351.1A Active CN111656488B (zh) 2018-01-26 2019-01-22 在多重图案化处理中使用原子层沉积的间隔件轮廓控制

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Country Status (5)

Country Link
US (1) US10446394B2 (https=)
JP (1) JP7334185B2 (https=)
KR (2) KR102818018B1 (https=)
CN (2) CN120637202A (https=)
WO (1) WO2019147583A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734238B2 (en) 2017-11-21 2020-08-04 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for critical dimension control
US10658174B2 (en) 2017-11-21 2020-05-19 Lam Research Corporation Atomic layer deposition and etch for reducing roughness
US10515815B2 (en) 2017-11-21 2019-12-24 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formation
US20190378725A1 (en) * 2018-06-08 2019-12-12 Lam Research Corporation Method for transferring a pattern from an organic mask
JP6677356B1 (ja) * 2019-02-19 2020-04-08 株式会社明電舎 原子層堆積方法および原子層堆積装置
US11145509B2 (en) 2019-05-24 2021-10-12 Applied Materials, Inc. Method for forming and patterning a layer and/or substrate
JP7508071B2 (ja) * 2019-09-25 2024-07-01 東京エレクトロン株式会社 基板のパターン化処理
KR102860533B1 (ko) * 2020-12-10 2025-09-17 주식회사 원익아이피에스 반도체 소자 제조 방법
KR102860588B1 (ko) * 2020-12-18 2025-09-16 주식회사 원익아이피에스 박막 형성방법 및 그를 포함하는 반도체 소자 제조방법
JP7500454B2 (ja) * 2021-01-28 2024-06-17 東京エレクトロン株式会社 成膜方法及び処理装置
CN115376911B (zh) * 2021-05-21 2025-08-08 中微半导体设备(上海)股份有限公司 一种衬底处理方法及系统
KR102810420B1 (ko) 2022-04-26 2025-05-22 주식회사 테스 기판 처리 방법
US20250191909A1 (en) * 2023-12-08 2025-06-12 Applied Materials, Inc. Uniform gapfill deposition on semiconductor substrates with varying geometries
US20260040842A1 (en) * 2024-07-31 2026-02-05 Applied Materials, Inc. Post-gap fill treatment for seam reduction

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7758794B2 (en) 2001-10-29 2010-07-20 Princeton University Method of making an article comprising nanoscale patterns with reduced edge roughness
US7250371B2 (en) 2003-08-26 2007-07-31 Lam Research Corporation Reduction of feature critical dimensions
US8123968B2 (en) 2005-08-25 2012-02-28 Round Rock Research, Llc Multiple deposition for integration of spacers in pitch multiplication process
US7459363B2 (en) 2006-02-22 2008-12-02 Micron Technology, Inc. Line edge roughness reduction
KR101605005B1 (ko) 2007-12-21 2016-03-21 램 리써치 코포레이션 Ａｒｃ 층 오프닝을 이용한 ｃｄ 바이어스 로딩 제어
US7998872B2 (en) 2008-02-06 2011-08-16 Tokyo Electron Limited Method for etching a silicon-containing ARC layer to reduce roughness and CD
JP5223364B2 (ja) 2008-02-07 2013-06-26 東京エレクトロン株式会社 プラズマエッチング方法及び記憶媒体
US8866254B2 (en) 2008-02-19 2014-10-21 Micron Technology, Inc. Devices including fin transistors robust to gate shorts and methods of making the same
JP4972594B2 (ja) 2008-03-26 2012-07-11 東京エレクトロン株式会社 エッチング方法及び半導体デバイスの製造方法
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US8298949B2 (en) 2009-01-07 2012-10-30 Lam Research Corporation Profile and CD uniformity control by plasma oxidation treatment
US9390909B2 (en) * 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9685320B2 (en) * 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8901016B2 (en) * 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
US8334083B2 (en) 2011-03-22 2012-12-18 Tokyo Electron Limited Etch process for controlling pattern CD and integrity in multi-layer masks
KR101819721B1 (ko) 2011-04-07 2018-02-28 피코순 오와이 플라즈마 소오스를 갖는 원자층 퇴적
US8298951B1 (en) * 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
US20130189845A1 (en) * 2012-01-19 2013-07-25 Applied Materials, Inc. Conformal amorphous carbon for spacer and spacer protection applications
US8716149B2 (en) * 2012-05-29 2014-05-06 GlobalFoundries, Inc. Methods for fabricating integrated circuits having improved spacers
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US8815685B2 (en) 2013-01-31 2014-08-26 GlobalFoundries, Inc. Methods for fabricating integrated circuits having confined epitaxial growth regions
US9184233B2 (en) 2013-02-27 2015-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for defect passivation to reduce junction leakage for finFET device
US9412871B2 (en) 2013-03-08 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with channel backside passivation layer device and method
US9287262B2 (en) 2013-10-10 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Passivated and faceted for fin field effect transistor
KR101674972B1 (ko) * 2013-12-26 2016-11-10 한국과학기술원 나노 스케일 패터닝 방법 및 이로부터 제조된 전자기기용 집적소자
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
CN105470132B (zh) 2014-09-03 2018-08-10 中芯国际集成电路制造(上海)有限公司 鳍式场效应管的形成方法
KR102412517B1 (ko) * 2014-10-08 2022-06-22 어플라이드 머티어리얼스, 인코포레이티드 이중층 ald를 사용한 정확한 임계 치수 제어
US9818633B2 (en) 2014-10-17 2017-11-14 Lam Research Corporation Equipment front end module for transferring wafers and method of transferring wafers
US9659929B2 (en) 2014-10-31 2017-05-23 Infineon Technologies Dresden Gmbh Semiconductor device with enhancement and depletion FinFET cells
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9991132B2 (en) * 2015-04-17 2018-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Lithographic technique incorporating varied pattern materials
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9653571B2 (en) * 2015-06-15 2017-05-16 International Business Machines Corporation Freestanding spacer having sub-lithographic lateral dimension and method of forming same
US9922839B2 (en) 2015-06-23 2018-03-20 Lam Research Corporation Low roughness EUV lithography
US20170053793A1 (en) * 2015-08-17 2017-02-23 Tokyo Electron Limited Method and system for sculpting spacer sidewall mask
US10692974B2 (en) 2015-09-18 2020-06-23 Intel Corporation Deuterium-based passivation of non-planar transistor interfaces
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US10483109B2 (en) 2016-04-12 2019-11-19 Tokyo Electron Limited Self-aligned spacer formation
US9997631B2 (en) 2016-06-03 2018-06-12 Taiwan Semiconductor Manufacturing Company Methods for reducing contact resistance in semiconductors manufacturing process
US10074543B2 (en) * 2016-08-31 2018-09-11 Lam Research Corporation High dry etch rate materials for semiconductor patterning applications
US10546748B2 (en) * 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US9997371B1 (en) 2017-04-24 2018-06-12 Lam Research Corporation Atomic layer etch methods and hardware for patterning applications
US10515815B2 (en) 2017-11-21 2019-12-24 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formation
US10734238B2 (en) 2017-11-21 2020-08-04 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for critical dimension control
US10658174B2 (en) 2017-11-21 2020-05-19 Lam Research Corporation Atomic layer deposition and etch for reducing roughness

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