JP2021512503A - 光検出装置およびその光検出方法 - Google Patents
光検出装置およびその光検出方法 Download PDFInfo
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 112
- 239000011358 absorbing material Substances 0.000 claims abstract description 101
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- 239000011241 protective layer Substances 0.000 claims description 8
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
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- 239000010703 silicon Substances 0.000 description 9
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- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 8
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- 238000009825 accumulation Methods 0.000 description 3
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- 230000035515 penetration Effects 0.000 description 3
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- 229910005881 NiSi 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 238000000407 epitaxy Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
Description
本特許出願は、参照により本明細書において組み込まれている2018年2月23日に出願された米国仮特許出願第62/634,741号、2018年4月8日に出願された米国仮特許出願第62/654,454号、2018年4月20日に出願された米国仮特許出願第62/660,252号、2018年7月15日に出願された米国仮特許出願第62/698,263号、2018年6月8日に出願された米国仮特許出願第62/682,254号、2018年6月19日に出願された米国仮特許出願第62/686,697号、2018年7月8日に出願された米国仮特許出願第62/695,060号、2018年7月8日に出願された米国仮特許出願第62/695,058号、2018年10月29日に出願された米国仮特許出願第62/752,285号、2018年8月13日に出願された米国仮特許出願第62/717,908号、2018年11月5日に出願された米国仮特許出願第62/755,581号、2018年11月21日に出願された米国仮特許出願第62/770,196号、および2018年12月7日に出願された米国仮特許出願第62/776,995号の便益を請求する。
101a、101b ドープ領域
201a、201b、301a、301b、401a、401b、501a、501b、601a、601b、701a、701b、801a、801b、901a、901b、1001a、1001b N型領域
102、202、302、402、502、602、702、802、902、1002 ゲルマニウムに基づく光吸収材料
102s、102ss、202s、202ss、302s、302ss、402s、502s、602s、602ss、702s、802s、902s、1002s 表面
103a、103b ドープ領域
104、204、304、904、1004 半導体基板
105a、105b、1005a、1005b 非ドープ領域
106a、106b、206a、206b、306a、306b、406a、406b、506a、506b、606a、606b、706a、706b、806a、806b、906a、906b、1006a、1006b、1106a、1106b 制御金属線
108a、108b、208a、208b、308a、308b、408a、408b、508a、508b、608a、608b、708a 708b、808a、808b、908a、908b、1008a、1008b、1108a、1108b 読み出し金属線
110a、110b、1010a、1010b コンデンサ
203a、203b、303a、303b、403a、403b、503a、503b、603a、603b、703a、703b、803a、803b、903a、903b、1003a、1003b P型領域
202v ゲルマニウム貫通ビア
204v、314 シリコン貫通ビア
207、207a、207b、307 N型領域
309a、309b 空乏領域
312 誘電層
411a、411b、1011a、1011b Nウェル
451a、451b Pウェル
513a、513b、515a、515b シリサイド
514、1014 保護層
617 N型領域
619 P型領域
721、716a、716b、718a、718b 金属
721d、716ad、716bd、718ad、718bd 空乏/蓄積/反転の領域
721e、716ae、716be、718ae、718be 偏極された誘導体
723a、723b 金属
725a、725b 偏極された誘導体
801a、801b、803a、803b ドープ領域
829、831a、831b、833a、833b イオン処理領域
924、924a 隔離領域
924b トレンチ隔離領域
1013a、1013b、1015a、1015b シリサイド
1019 P型領域
1021 金属
1024 隔離領域
12021、12022、12023、12024 画素
1302 画素配列
1302a 第1の画素配列
1302b 第2の画素配列
1304 レーザーダイオードドライバ
1306 レーザーダイオード
1308 クロック駆動回路
13081、13082 クロックドライバ
1310 目標物体
AR 吸収領域
ca1、ca2、ca3 バイアス電圧
CLK1、CLK2、CLK3 クロック信号
CLK2’ 反転した信号
cs1、cs2 制御信号
d1、d2 深さ
fmod1、fmod2 変調周波数
IL 光学信号
ILD 中間層誘電体
TL 変調されて送信された光
v1、v2 電圧
vb1、vb2 バイアス電圧
vb2、vb3 ボディバイアス
w1、w2 幅
WD 光学窓
λ、λ1、λ2 光学波長
Claims (20)
- 半導体基板と、
前記半導体基板によって支持され、800nmより大きい第1の波長を有する第1の光学信号を吸収するように構成される第1のゲルマニウムに基づく光吸収材料と、
前記第1のゲルマニウムに基づく光吸収材料の第1の領域に電気的に結合される第1の金属線と、
前記第1のゲルマニウムに基づく光吸収材料の第2の領域に電気的に結合される第2の金属線と、
を備え、
前記第1の領域はドープされないかまたは第1の種類のドーパントでドープされ、前記第2の領域は第2の種類のドーパントでドープされ、前記第1の金属線は、前記第2の領域によって収集されるように、前記第1のゲルマニウムに基づく光吸収材料の内部で発生させられるある量の第1の種類の光発生キャリアを制御するように構成される、光検出装置。 - 前記第1のゲルマニウムに基づく光吸収材料の第3の領域に結合される第3の金属線と、
前記第1のゲルマニウムに基づく光吸収材料の第4の領域に結合される第4の金属線と、
を備え、
前記第3の領域はドープされないかまたは前記第1の種類のドーパントでドープされ、前記第4の領域は前記第2の種類のドーパントでドープされ、前記第3の金属線は、前記第4の領域によって収集されるように、前記第1のゲルマニウムに基づく光吸収材料の内部で発生させられる前記ある量の前記第1の種類の光発生キャリアを制御するように構成される、請求項1に記載の光検出装置。 - 前記第1のゲルマニウムに基づく光吸収材料の第1の面から延びる前記第1の領域の深さは、前記第1のゲルマニウムに基づく光吸収材料の前記第1の面から延びる前記第2の領域の深さより小さい、請求項2に記載の光検出装置。
- 前記第1の領域、前記第2の領域、前記第3の領域、および前記第4の領域が形成される前記第1のゲルマニウムに基づく光吸収材料の第1の面と反対の第2の面に形成される第5の領域を備え、前記第5の領域は前記第2の種類のドーパントでドープされる、請求項2に記載の光検出装置。
- 前記第1のゲルマニウムに基づく光吸収材料は前記第2の種類のドーパントでドープされる、請求項2に記載の光検出装置。
- 前記第1の種類のドーパントでドープされる前記第1の領域は低濃度でドープされる、請求項1に記載の光検出装置。
- 前記第1の種類のドーパントのドーピング濃度が前記第2の種類のドーパントのドーピング濃度より低い、請求項1に記載の光検出装置。
- 前記半導体基板に前記第1のゲルマニウムに基づく光吸収材料の隣で配置される前記第1の種類のドーパントでのU字形ドープ領域を備える、請求項1に記載の光検出装置。
- 前記第1のゲルマニウムに基づく光吸収材料と前記半導体基板との間に埋め込まれる誘電層をさらに備える、請求項1に記載の光検出装置。
- 前記第1の領域を一部または全部で包囲する前記第2の種類のドーパントを伴うウェル領域をさらに備える、請求項1に記載の光検出装置。
- 前記第2の領域を一部または全部で包囲する前記第1の種類のドーパントを伴うウェル領域をさらに備える、請求項1に記載の光検出装置。
- 前記第1のゲルマニウムに基づく光吸収材料の第1の面に形成される保護層をさらに備える、請求項1に記載の光検出装置。
- 前記保護層の上方に形成され、前記第1の光学信号を反射させることができる位置に配置される金属板を備える、請求項12に記載の光検出装置。
- 前記第1のゲルマニウムに基づく光吸収材料を一部または全部で包囲する隔離領域を備える、請求項1に記載の光検出装置。
- 第1のケイ化物が前記第1の金属線と前記第1のゲルマニウムに基づく光吸収材料との間に形成され、第2のケイ化物が前記第2の金属線と前記第1のゲルマニウムに基づく光吸収材料との間に形成される、請求項1に記載の光検出装置。
- 前記半導体基板によって支持される第2のゲルマニウムに基づく光吸収材料を備え、
前記第1のゲルマニウムに基づく光吸収材料は、上方視点から、第1の長さおよび第1の幅を伴う第1の矩形を形成し、
前記第2のゲルマニウムに基づく光吸収材料は、上方視点から、第2の長さおよび第2の幅を伴う第2の矩形を形成し、
前記第1の長さの方向と前記第2の長さの方向とは互いに対して垂直である、請求項1に記載の光検出装置。 - 前記半導体基板によって支持される第2のゲルマニウムに基づく光吸収材料を備え、
前記第2のゲルマニウムに基づく光吸収材料は、第2の波長を伴う第2の光学信号を吸収するように構成され、前記第2の波長は前記第1の波長と異なる、請求項1に記載の光検出装置。 - 前記半導体基板によって支持される第2のゲルマニウムに基づく光吸収材料を備え、
前記第2のゲルマニウムに基づく光吸収材料は第2の光学信号を吸収するように構成され、前記第1の光学信号は第1の変調信号で適用され、前記第2の光学信号は第2の変調信号で適用され、前記第1の変調と前記第2の変調とは異なる、請求項1に記載の光検出装置。 - 光学信号を送信するためのレーザードライバに結合されるレーザーを備え、
前記光学信号は、多重時間フレームのための複数の所定の位相を伴う第1の変調信号によって変調され、前記第1の光学信号は、物体から反射される前記光学信号であり、前記第1のゲルマニウムに基づく光吸収材料によって吸収される前記第1の光学信号は、前記多重時間フレームのための第1の単一の所定の位相を伴う第2の変調信号によって復調される、請求項1に記載の光検出装置。 - 前記半導体基板によって支持される第2のゲルマニウムに基づく光吸収材料を備え、
前記第2のゲルマニウムに基づく光吸収材料によって吸収される前記第1の光学信号は、前記多重時間フレームのための第2の単一の所定の位相を伴う前記第2の変調信号によって復調され、前記第2の単一の所定の位相は、前記第1の単一の所定の位相に対して直交する位相である、請求項19に記載の光検出装置。
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