MX2017014819A - Fuentes opticas para analisis de tiempo de vida fluorescente. - Google Patents

Fuentes opticas para analisis de tiempo de vida fluorescente.

Info

Publication number
MX2017014819A
MX2017014819A MX2017014819A MX2017014819A MX2017014819A MX 2017014819 A MX2017014819 A MX 2017014819A MX 2017014819 A MX2017014819 A MX 2017014819A MX 2017014819 A MX2017014819 A MX 2017014819A MX 2017014819 A MX2017014819 A MX 2017014819A
Authority
MX
Mexico
Prior art keywords
optical sources
fluorescent lifetime
lifetime analysis
short
optical
Prior art date
Application number
MX2017014819A
Other languages
English (en)
Inventor
C West Lawrence
Camara Jose
C Schultz Jonathan
M Rothbergh Jonathan
M Sickler Jason
Ahmad Faisal
Huang Brendan
E Gleen Paul
Original Assignee
Quantum Si Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/821,656 external-priority patent/US9759658B2/en
Application filed by Quantum Si Inc filed Critical Quantum Si Inc
Publication of MX2017014819A publication Critical patent/MX2017014819A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J11/00—Measuring the characteristics of individual optical pulses or of optical pulse trains
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/44—Raman spectrometry; Scattering spectrometry ; Fluorescence spectrometry
    • G01J3/4406—Fluorescence spectrometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H01S5/0602—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region which is an umpumped part of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Abstract

Se describen fuentes ópticas compactas y métodos para producir pulsos ópticos cortos y ultracortos; un láser semiconductor o LED (2-423) se puede impulsar con una forma de onda bipolar para generar pulsos ópticos con duraciones de FWHM tan cortas como aproximadamente 85 ps habiendo suprimido la emisión de cola; las fuentes ópticas pulsadas se pueden usar para análisis de vida útil fluorescente de muestras biológicas y formación de imágenes de tiempo de vuelo, entre otras aplicaciones.
MX2017014819A 2015-05-20 2016-05-20 Fuentes opticas para analisis de tiempo de vida fluorescente. MX2017014819A (es)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201562164485P 2015-05-20 2015-05-20
US201562164506P 2015-05-20 2015-05-20
US201562164464P 2015-05-20 2015-05-20
US14/821,656 US9759658B2 (en) 2014-08-08 2015-08-07 Integrated device for temporal binning of received photons
US201662296546P 2016-02-17 2016-02-17
US201662310398P 2016-03-18 2016-03-18
PCT/US2016/033585 WO2016187566A2 (en) 2015-05-20 2016-05-20 Optical sources for fluorescent lifetime analysis

Publications (1)

Publication Number Publication Date
MX2017014819A true MX2017014819A (es) 2018-05-01

Family

ID=57320813

Family Applications (2)

Application Number Title Priority Date Filing Date
MX2017014819A MX2017014819A (es) 2015-05-20 2016-05-20 Fuentes opticas para analisis de tiempo de vida fluorescente.
MX2022001620A MX2022001620A (es) 2015-05-20 2017-11-17 Fuentes opticas para analisis de tiempo de vida fluorescente.

Family Applications After (1)

Application Number Title Priority Date Filing Date
MX2022001620A MX2022001620A (es) 2015-05-20 2017-11-17 Fuentes opticas para analisis de tiempo de vida fluorescente.

Country Status (11)

Country Link
EP (2) EP4050886A1 (es)
JP (2) JP7078398B2 (es)
KR (1) KR102516593B1 (es)
CN (1) CN107851965B (es)
AU (2) AU2016264739B2 (es)
BR (1) BR112017024605B1 (es)
CA (1) CA2986155A1 (es)
HK (1) HK1252482A1 (es)
MX (2) MX2017014819A (es)
TW (1) TWI709743B (es)
WO (1) WO2016187566A2 (es)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108352393B (zh) 2015-07-23 2022-09-16 光程研创股份有限公司 高效宽光谱传感器
US10761599B2 (en) 2015-08-04 2020-09-01 Artilux, Inc. Eye gesture tracking
US10707260B2 (en) 2015-08-04 2020-07-07 Artilux, Inc. Circuit for operating a multi-gate VIS/IR photodiode
EP3709362B1 (en) 2015-08-04 2021-07-14 Artilux Inc. Germanium-silicon light sensing method
US10861888B2 (en) 2015-08-04 2020-12-08 Artilux, Inc. Silicon germanium imager with photodiode in trench
CN115824395B (zh) 2015-08-27 2023-08-15 光程研创股份有限公司 宽频谱光学传感器
US10739443B2 (en) 2015-11-06 2020-08-11 Artilux, Inc. High-speed light sensing apparatus II
US10886309B2 (en) 2015-11-06 2021-01-05 Artilux, Inc. High-speed light sensing apparatus II
US10418407B2 (en) 2015-11-06 2019-09-17 Artilux, Inc. High-speed light sensing apparatus III
US10254389B2 (en) 2015-11-06 2019-04-09 Artilux Corporation High-speed light sensing apparatus
US10741598B2 (en) 2015-11-06 2020-08-11 Atrilux, Inc. High-speed light sensing apparatus II
FR3054331B1 (fr) * 2016-07-20 2022-07-29 Irisiome Systeme de generation d'impulsions lumineuses breves ou ultra-breves
JP7064315B2 (ja) * 2017-11-07 2022-05-10 オリンパス株式会社 光検出装置およびレーザ走査型顕微鏡
DE102018103518B3 (de) * 2018-02-16 2019-07-11 Forschungsverbund Berlin E.V. Schaltung, System zur Entfernungsbestimmung und ein Fahrzeug
US11482553B2 (en) 2018-02-23 2022-10-25 Artilux, Inc. Photo-detecting apparatus with subpixels
JP6975341B2 (ja) 2018-02-23 2021-12-01 アーティラックス・インコーポレイテッド 光検出装置およびその光検出方法
US11105928B2 (en) 2018-02-23 2021-08-31 Artilux, Inc. Light-sensing apparatus and light-sensing method thereof
JP7212062B2 (ja) 2018-04-08 2023-01-24 アーティラックス・インコーポレイテッド 光検出装置
DE102018108910B3 (de) 2018-04-16 2019-07-04 Elmos Semiconductor Aktiengesellschaft Lichtquelle für kurze LED-Lichtpulse und Verfahren zur Erzeugung von Lichtpulsen
US10854770B2 (en) 2018-05-07 2020-12-01 Artilux, Inc. Avalanche photo-transistor
US10969877B2 (en) 2018-05-08 2021-04-06 Artilux, Inc. Display apparatus
WO2019220863A1 (ja) * 2018-05-14 2019-11-21 国立大学法人東京農工大学 光パルス対生成装置、光検出装置、および光検出方法
CN112424587A (zh) * 2018-06-15 2021-02-26 宽腾矽公司 用于具有脉冲光源的先进分析仪器的数据采集控制
TWI816830B (zh) 2018-07-08 2023-10-01 美商光程研創股份有限公司 發光裝置
CN112771736A (zh) * 2018-09-26 2021-05-07 Asml荷兰有限公司 在光刻系统中提供高精度延迟的装置和方法
TWI687898B (zh) 2018-11-23 2020-03-11 宏碁股份有限公司 影像正規化方法及影像處理裝置
US11652184B2 (en) 2019-08-28 2023-05-16 Artilux, Inc. Photo-detecting apparatus with low dark current
TWI811877B (zh) * 2020-12-07 2023-08-11 中央研究院 雙功能電光矽場效電晶體分子感測器

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4295226A (en) * 1980-07-02 1981-10-13 Bell Telephone Laboratories, Incorporated High speed driver for optoelectronic devices
JPS6317581A (ja) * 1986-07-10 1988-01-25 Sumitomo Electric Ind Ltd 発光素子の駆動回路
EP0472318A3 (en) * 1990-08-06 1994-08-10 At & T Corp Led pulse shaping circuit
US5329210A (en) * 1991-11-13 1994-07-12 At&T Bell Laboratories High-speed driver for an LED communication system or the like
JPH05275780A (ja) * 1992-03-27 1993-10-22 Topcon Corp パルスレーザドライバの保護回路
DE19702261C2 (de) * 1997-01-23 2000-02-03 Grieshaber Vega Kg Mikrowellen-Pulsgenerator
JP2000155052A (ja) * 1998-09-14 2000-06-06 Agency Of Ind Science & Technol 光パルス入力型高速ジョセフソンサンプリング測定回路
JP3314772B2 (ja) * 1999-09-01 2002-08-12 日本電気株式会社 光パルス発生装置及びそれを用いた光クロック抽出装置と光クロック分周装置と光クロック抽出分周装置
EP1317035A1 (en) * 2001-11-29 2003-06-04 Hitachi Ltd. Optical pulse generator
GB2382648B (en) * 2001-12-11 2003-11-12 Amersham Pharm Biotech Uk Ltd System and method for time correlated multi-photon counting measurements
DE10323669A1 (de) * 2003-05-14 2004-12-02 Atmel Germany Gmbh Treiberschaltung zum Betreiben eines elektronischen Bauteils
US20050048539A1 (en) * 2003-06-13 2005-03-03 The General Hospital Corporation Methods to monitor molecule conformation and molecule/molecule proximity
JP4398331B2 (ja) * 2003-09-25 2010-01-13 パナソニック株式会社 レーザ駆動装置、光ディスク装置、レーザ駆動方法およびレーザ駆動用集積回路
US20060029110A1 (en) * 2004-08-03 2006-02-09 Imra America, Inc. Cavity monitoring device for pulse laser
KR100701006B1 (ko) * 2005-05-31 2007-03-29 한국전자통신연구원 포물선 도파로형 평행광 렌즈 및 이를 포함한 파장 가변외부 공진 레이저 다이오드
IE20060447A1 (en) * 2006-06-14 2009-04-15 Nat Univ Ireland Solid-state fluorescent analyser
GB2447254B (en) * 2007-03-01 2009-10-14 Toshiba Res Europ Ltd A photon detector
US7873085B2 (en) * 2007-10-23 2011-01-18 Andrei Babushkin Method and device for controlling optical output of laser diode
JP2010028751A (ja) * 2008-07-24 2010-02-04 Toshiba Corp コンプリメンタリー光配線装置
JP2010204006A (ja) * 2009-03-05 2010-09-16 Anritsu Corp 光信号モニタ装置及び該装置のサンプリング周波数調整方法
JP5415805B2 (ja) * 2009-03-31 2014-02-12 オリンパスメディカルシステムズ株式会社 診断支援装置
US8664876B2 (en) * 2009-06-29 2014-03-04 Tai-Her Yang Lighting device with optical pulsation suppression by polyphase-driven electric energy
JP5276025B2 (ja) * 2010-01-07 2013-08-28 古河電気工業株式会社 半導体レーザ駆動用電気パルス発生装置
JP2011185842A (ja) * 2010-03-10 2011-09-22 Fujifilm Corp 光誘起自家蛍光の時間分解測定による生物試料の低酸素領域分析方法とその装置
CN102448211A (zh) * 2010-09-30 2012-05-09 富准精密工业(深圳)有限公司 发光二极管驱动电路
DE102011114874A1 (de) * 2011-09-30 2013-04-04 Carl Zeiss Microscopy Gmbh Auswerteschaltung für einen optoelektronischen Detektor und Verfahren zum Aufzeichnen von Fluoreszenzereignissen
DE102011055330A1 (de) * 2011-11-14 2013-05-16 Leica Microsystems Cms Gmbh Verfahren zum Messen der Lebensdauer eines angeregten Zustandes in einer Probe
JP6163308B2 (ja) * 2013-02-04 2017-07-12 スペクトロニクス株式会社 短光パルス発生装置
CN104078839B (zh) * 2014-06-26 2017-04-19 中国科学院半导体研究所 基于波导耦合微盘光子分子激光器的光脉冲同步信号源

Also Published As

Publication number Publication date
JP2018518670A (ja) 2018-07-12
TW201723466A (zh) 2017-07-01
CN107851965A (zh) 2018-03-27
JP7078398B2 (ja) 2022-05-31
WO2016187566A2 (en) 2016-11-24
JP2022126643A (ja) 2022-08-30
MX2022001620A (es) 2022-03-02
EP4050886A1 (en) 2022-08-31
KR102516593B1 (ko) 2023-04-03
AU2016264739B2 (en) 2021-09-09
AU2021282505A1 (en) 2022-01-06
CN107851965B (zh) 2021-01-05
KR20180008778A (ko) 2018-01-24
EP3298666A2 (en) 2018-03-28
WO2016187566A3 (en) 2016-12-29
EP3298666B1 (en) 2021-12-29
BR112017024605A2 (pt) 2018-07-31
BR112017024605B1 (pt) 2022-11-16
HK1252482A1 (zh) 2019-05-24
CA2986155A1 (en) 2016-11-24
AU2016264739A1 (en) 2017-12-14
TWI709743B (zh) 2020-11-11

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