JP2021503482A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2021503482A5 JP2021503482A5 JP2020527805A JP2020527805A JP2021503482A5 JP 2021503482 A5 JP2021503482 A5 JP 2021503482A5 JP 2020527805 A JP2020527805 A JP 2020527805A JP 2020527805 A JP2020527805 A JP 2020527805A JP 2021503482 A5 JP2021503482 A5 JP 2021503482A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon atoms
- combination
- butyl
- group
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000000217 alkyl group Chemical group 0.000 claims 12
- 125000004432 carbon atom Chemical group C* 0.000 claims 12
- 239000000203 mixture Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 9
- 239000011248 coating agent Substances 0.000 claims 5
- 238000000576 coating method Methods 0.000 claims 5
- 239000003960 organic solvent Substances 0.000 claims 5
- 230000005855 radiation Effects 0.000 claims 5
- 125000000753 cycloalkyl group Chemical group 0.000 claims 4
- UOCJDOLVGGIYIQ-PBFPGSCMSA-N cefatrizine Chemical group S([C@@H]1[C@@H](C(N1C=1C(O)=O)=O)NC(=O)[C@H](N)C=2C=CC(O)=CC=2)CC=1CSC=1C=NNN=1 UOCJDOLVGGIYIQ-PBFPGSCMSA-N 0.000 claims 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 3
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 claims 3
- 125000000962 organic group Chemical group 0.000 claims 3
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 2
- 239000003446 ligand Substances 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000002194 synthesizing effect Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024075585A JP2024122972A (ja) | 2017-11-20 | 2024-05-08 | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762588546P | 2017-11-20 | 2017-11-20 | |
| US62/588,546 | 2017-11-20 | ||
| PCT/US2018/061769 WO2019099981A2 (en) | 2017-11-20 | 2018-11-19 | Organotin clusters, solutions of organotin clusters, and application to high resolution patterning |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024075585A Division JP2024122972A (ja) | 2017-11-20 | 2024-05-08 | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021503482A JP2021503482A (ja) | 2021-02-12 |
| JP2021503482A5 true JP2021503482A5 (https=) | 2021-07-29 |
| JP7487103B2 JP7487103B2 (ja) | 2024-05-20 |
Family
ID=66534919
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020527805A Active JP7487103B2 (ja) | 2017-11-20 | 2018-11-19 | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
| JP2024075585A Pending JP2024122972A (ja) | 2017-11-20 | 2024-05-08 | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024075585A Pending JP2024122972A (ja) | 2017-11-20 | 2024-05-08 | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US11098070B2 (https=) |
| JP (2) | JP7487103B2 (https=) |
| KR (3) | KR102918243B1 (https=) |
| TW (2) | TWI719360B (https=) |
| WO (1) | WO2019099981A2 (https=) |
Families Citing this family (77)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI639179B (zh) | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| CN108780739B (zh) | 2016-03-11 | 2023-09-15 | 因普里亚公司 | 预图案化光刻模板、基于使用该模板的辐射图案化的工艺及形成该模板的工艺 |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| KR102918243B1 (ko) * | 2017-11-20 | 2026-01-26 | 인프리아 코포레이션 | 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용 |
| TWI814552B (zh) | 2018-04-05 | 2023-09-01 | 美商英培雅股份有限公司 | 錫十二聚物及具有強euv吸收的輻射可圖案化塗層 |
| US11972948B2 (en) | 2018-06-13 | 2024-04-30 | Brewer Science, Inc. | Adhesion layers for EUV lithography |
| KR102678588B1 (ko) | 2018-11-14 | 2024-06-27 | 램 리써치 코포레이션 | 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들 |
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US11327398B2 (en) * | 2019-04-30 | 2022-05-10 | Samsung Electronics Co., Ltd. | Photoresist compositions and methods for fabricating semiconductor devices using the same |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI910974B (zh) | 2019-06-26 | 2026-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR102937721B1 (ko) | 2019-06-28 | 2026-03-12 | 램 리써치 코포레이션 | 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들 |
| JP7618601B2 (ja) | 2019-06-28 | 2025-01-21 | ラム リサーチ コーポレーション | 複数のパターニング放射吸収元素および/または垂直組成勾配を備えたフォトレジスト |
| TWI838557B (zh) | 2019-07-12 | 2024-04-11 | 美商英培雅股份有限公司 | 輻射圖案化組合物在基板上的穩定化界面 |
| WO2021016229A1 (en) * | 2019-07-22 | 2021-01-28 | Inpria Corporation | Organometallic metal chalcogenide clusters and application to lithography |
| US11579531B2 (en) | 2019-09-25 | 2023-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Organometallic cluster photoresists for EUV lithography |
| CN114200776A (zh) | 2020-01-15 | 2022-03-18 | 朗姆研究公司 | 用于光刻胶粘附和剂量减少的底层 |
| CN115244664A (zh) | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 用于减少euv图案化缺陷的多层硬掩模 |
| US11886116B2 (en) | 2020-05-06 | 2024-01-30 | Inpria Corporation | Multiple patterning with organometallic photopatternable layers with intermediate freeze steps |
| JP2023530299A (ja) | 2020-06-22 | 2023-07-14 | ラム リサーチ コーポレーション | 金属含有フォトレジスト堆積のための表面改質 |
| US12416863B2 (en) | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| US11621172B2 (en) | 2020-07-01 | 2023-04-04 | Applied Materials, Inc. | Vapor phase thermal etch solutions for metal oxo photoresists |
| US12159787B2 (en) * | 2020-07-02 | 2024-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| WO2022010809A1 (en) | 2020-07-07 | 2022-01-13 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| KR102586112B1 (ko) * | 2020-09-14 | 2023-10-05 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102671848B1 (ko) * | 2020-09-14 | 2024-05-31 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102586099B1 (ko) * | 2020-09-14 | 2023-10-05 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| WO2022103764A1 (en) | 2020-11-13 | 2022-05-19 | Lam Research Corporation | Process tool for dry removal of photoresist |
| US12577466B2 (en) | 2020-12-08 | 2026-03-17 | Lam Research Corporation | Photoresist development with organic vapor |
| KR102701790B1 (ko) * | 2020-12-15 | 2024-09-04 | 전남대학교산학협력단 | 무기산으로 안정화된 금속산화물 클러스터를 포함하는 포토레지스트용 조성물 |
| KR102690557B1 (ko) | 2020-12-18 | 2024-07-30 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물, 이의 제조 방법 및 이를 이용한 패턴 형성 방법 |
| KR102598259B1 (ko) * | 2020-12-18 | 2023-11-02 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| US11685752B2 (en) * | 2021-01-28 | 2023-06-27 | Entegris, Inc. | Process for preparing organotin compounds |
| US20220365428A1 (en) * | 2021-05-14 | 2022-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist materials and associated methods |
| EP4430053A4 (en) * | 2021-11-08 | 2026-01-07 | Inpria Corp | ORGANOSTANNIC PHOTORESIN COMPOSITIONS WITH IMPROVED STABILITY |
| CN114167685B (zh) * | 2021-12-07 | 2024-10-22 | 山西师范大学 | 有机锡-无机锡杂化Sn18型晶态锡氧簇合物及其制备方法 |
| KR102518770B1 (ko) * | 2021-12-20 | 2023-04-06 | 전남대학교산학협력단 | 클러스터 화합물 또는 이의 염 및 이를 포함하는 포토레지스트 조성물 |
| KR102522001B1 (ko) * | 2021-12-23 | 2023-04-20 | 전남대학교산학협력단 | 클러스터 화합물 또는 이의 염 및 이를 포함하는 포토레지스트 조성물 |
| US12517427B2 (en) | 2022-02-11 | 2026-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist, method of manufacturing a semiconductor device and method of extreme ultraviolet lithography |
| WO2023235534A1 (en) | 2022-06-02 | 2023-12-07 | Gelest, Inc. | High purity alkyl tin compounds and manufacturing methods thereof |
| KR102725782B1 (ko) | 2022-07-01 | 2024-11-05 | 램 리써치 코포레이션 | 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| KR102769240B1 (ko) * | 2022-07-12 | 2025-02-21 | 유한회사 디씨티머티리얼 | 반도체 euv 리소그래피 방법 |
| CN117659420A (zh) | 2022-08-29 | 2024-03-08 | 清华大学 | 一种Zn基有机配位纳米颗粒、光刻胶组合物及其制备方法与应用 |
| US12606577B2 (en) | 2022-09-28 | 2026-04-21 | Gelest, Inc. | Iodoalkyl tin compounds and preparation methods thereof |
| KR102686010B1 (ko) | 2022-12-26 | 2024-07-17 | 제이에스아이실리콘주식회사 | 신규한 유기스태닐 실리케이트 화합물, 이들의 제조 방법 및 이들을 포함하는 포토레지스트 조성물 |
| JP2024092963A (ja) | 2022-12-26 | 2024-07-08 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| JP7802711B2 (ja) * | 2023-01-06 | 2026-01-20 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| JPWO2024157904A1 (https=) | 2023-01-23 | 2024-08-02 | ||
| US20240288767A1 (en) * | 2023-01-27 | 2024-08-29 | Taiwan Semiconductor Manufacturing Company | Methods and materials for metallic photoresist |
| CN120641830A (zh) | 2023-02-28 | 2025-09-12 | 日产化学株式会社 | 具有碳-碳双键的含硅抗蚀剂下层膜形成用组合物 |
| WO2024196643A1 (en) | 2023-03-17 | 2024-09-26 | Lam Research Corporation | Integration of dry development and etch processes for euv patterning in a single process chamber |
| CN116333727B (zh) * | 2023-03-27 | 2025-04-01 | 山西师范大学 | 8-羟基喹啉类多核锡氧团簇晶态发光材料及其制备方法 |
| KR20250034920A (ko) | 2023-07-27 | 2025-03-11 | 램 리써치 코포레이션 | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 |
| KR20250020973A (ko) * | 2023-08-04 | 2025-02-11 | 삼성에스디아이 주식회사 | 패턴 형성 방법 |
| CN117023564B (zh) * | 2023-08-07 | 2025-10-28 | 清华大学 | 一种负载锡单原子和团簇的碳材料及其制备方法和应用 |
| CN117430627A (zh) * | 2023-10-26 | 2024-01-23 | 大连理工大学 | 一类双烷基和有机环状羧酸配位的锡氧金属团簇及其合成与应用 |
| WO2025105013A1 (ja) * | 2023-11-15 | 2025-05-22 | 三菱ケミカル株式会社 | スズ化合物、スズ組成物、それらの製造方法、レジスト溶液、パターン形成方法、薄膜、パターン化された薄膜、および基板の製造方法 |
| JP2025118531A (ja) | 2024-01-31 | 2025-08-13 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| KR20250125796A (ko) * | 2024-02-15 | 2025-08-22 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| JP2025136888A (ja) | 2024-03-08 | 2025-09-19 | 信越化学工業株式会社 | ネガ型レジストパターン形成方法 |
| JP2025136880A (ja) | 2024-03-08 | 2025-09-19 | 信越化学工業株式会社 | ネガ型レジストパターン形成方法 |
| JP2025139629A (ja) | 2024-03-13 | 2025-09-29 | 信越化学工業株式会社 | レジスト組成物、積層体、及びパターン形成方法 |
| JP2025139627A (ja) | 2024-03-13 | 2025-09-29 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| US20240272547A1 (en) * | 2024-03-28 | 2024-08-15 | Intel Corporation | Tin carboxylate precursors for metal oxide resist layers and related methods |
| JP2025157764A (ja) | 2024-04-03 | 2025-10-16 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| JP2025158084A (ja) | 2024-04-03 | 2025-10-16 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| CN121005732A (zh) * | 2024-05-24 | 2025-11-25 | 珠海基石科技有限公司 | 有机锡簇结构及其制备方法、图案化组合物、图案化方法、图案化薄膜、图案化基底和电子元器件 |
| JP2025185492A (ja) | 2024-06-10 | 2025-12-22 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| CN118393812B (zh) * | 2024-06-24 | 2024-08-30 | 珠海基石科技有限公司 | 图案化组合物、图案化薄膜、图案化基底、半导体器件及其制备方法 |
| JP2026008473A (ja) | 2024-07-05 | 2026-01-19 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| JP2026008471A (ja) | 2024-07-05 | 2026-01-19 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| JP2026012088A (ja) | 2024-07-12 | 2026-01-23 | 信越化学工業株式会社 | 積層体、積層体の製造方法及びパターン形成方法 |
| US20260029715A1 (en) | 2024-07-23 | 2026-01-29 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| US20260028503A1 (en) | 2024-07-23 | 2026-01-29 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| JP2026021902A (ja) | 2024-07-30 | 2026-02-12 | 信越化学工業株式会社 | 非化学増幅型レジスト組成物の製造方法、及びパターン形成方法 |
| JP2026021935A (ja) | 2024-07-30 | 2026-02-12 | 信越化学工業株式会社 | 非化学増幅型レジスト組成物の製造方法、及びパターン形成方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2317993C1 (ru) * | 2006-07-20 | 2008-02-27 | Государственное образовательное учреждение высшего профессионального образования "Кубанский государственный университет" (КубГУ) | Способ получения три- и тетраорганилалкинилолова |
| US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| KR102696070B1 (ko) * | 2014-10-23 | 2024-08-16 | 인프리아 코포레이션 | 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법 |
| IL239852A (en) | 2015-07-08 | 2016-12-29 | Algolion Ltd | Lithium-ion battery safety monitoring |
| EP4273625A3 (en) * | 2015-10-13 | 2024-02-28 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US10018920B2 (en) | 2016-03-04 | 2018-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography patterning with a gas phase resist |
| KR102918243B1 (ko) * | 2017-11-20 | 2026-01-26 | 인프리아 코포레이션 | 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용 |
| TWI814552B (zh) * | 2018-04-05 | 2023-09-01 | 美商英培雅股份有限公司 | 錫十二聚物及具有強euv吸收的輻射可圖案化塗層 |
| US10787466B2 (en) * | 2018-04-11 | 2020-09-29 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
| JP2023539735A (ja) * | 2020-08-25 | 2023-09-19 | インプリア・コーポレイション | 反応物の供給に好都合な配位子を持つ有機スズ組成物の製造方法 |
| EP4430053A4 (en) * | 2021-11-08 | 2026-01-07 | Inpria Corp | ORGANOSTANNIC PHOTORESIN COMPOSITIONS WITH IMPROVED STABILITY |
-
2018
- 2018-11-19 KR KR1020247003859A patent/KR102918243B1/ko active Active
- 2018-11-19 JP JP2020527805A patent/JP7487103B2/ja active Active
- 2018-11-19 WO PCT/US2018/061769 patent/WO2019099981A2/en not_active Ceased
- 2018-11-19 KR KR1020267002014A patent/KR20260027285A/ko active Pending
- 2018-11-19 TW TW107141012A patent/TWI719360B/zh active
- 2018-11-19 US US16/194,491 patent/US11098070B2/en active Active
- 2018-11-19 KR KR1020207012752A patent/KR102634520B1/ko active Active
- 2018-11-19 TW TW110101710A patent/TWI803806B/zh active
-
2021
- 2021-07-20 US US17/380,475 patent/US12129271B2/en active Active
-
2024
- 2024-05-08 JP JP2024075585A patent/JP2024122972A/ja active Pending
- 2024-09-25 US US18/895,654 patent/US20250011346A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2021503482A5 (https=) | ||
| TWI779489B (zh) | 含碘的光酸產生劑及包括其的組合物 | |
| US10725376B2 (en) | Pattern-forming method | |
| JP2021102604A (ja) | 有機修飾金属酸化物ナノ粒子、有機修飾金属酸化物ナノ粒子含有溶液、有機修飾金属酸化物ナノ粒子含有レジスト組成物及びレジストパターン形成方法 | |
| JP6820233B2 (ja) | ポリマー、該ポリマーを含有するレジスト組成物及びそれを用いたデバイスの製造方法 | |
| JP2016177202A (ja) | レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物 | |
| TW201716379A (zh) | 正型阻劑組成物、阻劑圖型之形成方法、光反應性抑制劑及高分子化合物 | |
| JP2000214588A5 (https=) | ||
| WO2014188762A1 (ja) | 感放射線性樹脂組成物、レジストパターン形成方法、酸拡散制御剤、化合物及び化合物の製造方法 | |
| WO2018056369A1 (ja) | レジスト組成物、パターン形成方法及び電子デバイスの製造方法 | |
| CN103140551A (zh) | 放射线敏感性树脂组合物、聚合物及化合物 | |
| JP2020201480A (ja) | 感放射線性組成物、パターン形成方法及び化合物 | |
| WO2023048168A1 (ja) | レジスト組成物、レジストパターン形成方法、化合物及び酸拡散制御剤 | |
| JPH11344808A5 (https=) | ||
| WO2009119784A1 (ja) | 環状化合物、環状化合物の製造方法、環状化合物からなるフォトレジスト基材、フォトレジスト組成物、微細加工方法、半導体装置及び装置 | |
| JP2008546027A5 (https=) | ||
| CN118239975B (zh) | 有机锡簇结构及其制备方法、图案化组合物、图案化方法、图案化薄膜、图案化基底和电子元器件 | |
| CN118393812B (zh) | 图案化组合物、图案化薄膜、图案化基底、半导体器件及其制备方法 | |
| TWI352696B (en) | Compound, positive resist composition and formatio | |
| JP5941820B2 (ja) | レジスト組成物、レジストパターン形成方法及び高分子化合物 | |
| JP2015207006A5 (ja) | 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 | |
| JP2019174821A (ja) | ポジ型レジスト組成物、及びレジストパターン形成方法 | |
| JP6735171B2 (ja) | 高分子化合物の製造方法 | |
| JP6103852B2 (ja) | レジスト組成物、及びレジストパターン形成方法 | |
| JP6118576B2 (ja) | レジスト組成物、レジストパターン形成方法、化合物、ラジカル重合開始剤、化合物の製造方法、重合体 |