JP2021177548A5 - - Google Patents
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- Publication number
- JP2021177548A5 JP2021177548A5 JP2021077049A JP2021077049A JP2021177548A5 JP 2021177548 A5 JP2021177548 A5 JP 2021177548A5 JP 2021077049 A JP2021077049 A JP 2021077049A JP 2021077049 A JP2021077049 A JP 2021077049A JP 2021177548 A5 JP2021177548 A5 JP 2021177548A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitting device
- light emitting
- substrate
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims 27
- 239000004065 semiconductor Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 9
- 239000011241 protective layer Substances 0.000 claims 6
- 238000005253 cladding Methods 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063019948P | 2020-05-04 | 2020-05-04 | |
| US63/019,948 | 2020-05-04 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2026013704A Division JP2026074083A (ja) | 2020-05-04 | 2026-01-30 | 発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021177548A JP2021177548A (ja) | 2021-11-11 |
| JP2021177548A5 true JP2021177548A5 (https=) | 2024-05-08 |
Family
ID=78267682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021077049A Pending JP2021177548A (ja) | 2020-05-04 | 2021-04-30 | 発光素子 |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US11705545B2 (https=) |
| JP (1) | JP2021177548A (https=) |
| KR (2) | KR20210135424A (https=) |
| CN (2) | CN113611783A (https=) |
| DE (1) | DE102021111355A1 (https=) |
| TW (3) | TWI891775B (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI891775B (zh) * | 2020-05-04 | 2025-08-01 | 晶元光電股份有限公司 | 發光元件 |
| US12243966B2 (en) * | 2020-06-24 | 2025-03-04 | Epistar Corporation | Light-emitting device |
| US20220320369A1 (en) * | 2021-03-31 | 2022-10-06 | Nichia Corporation | Method of manufacturing light-emitting element and light-emitting element |
| CN115458647B (zh) * | 2022-10-31 | 2025-08-19 | 天津三安光电有限公司 | 一种垂直led芯片结构及其制造方法及发光装置 |
| CN115663079B (zh) * | 2022-11-01 | 2026-03-31 | 厦门三安光电有限公司 | 一种发光二极管及其制备方法 |
| CN116995175B (zh) * | 2023-09-21 | 2024-02-06 | 南昌凯捷半导体科技有限公司 | 一种Ag微棱镜反光结构同侧电极LED及其制作方法 |
| CN118538845A (zh) * | 2024-06-05 | 2024-08-23 | 厦门三安光电有限公司 | 一种发光二极管、高压发光二极管及发光装置 |
| KR20260026632A (ko) * | 2024-08-19 | 2026-02-27 | 삼성디스플레이 주식회사 | 발광소자, 표시 장치와 그의 제조 방법 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994205A (en) * | 1997-02-03 | 1999-11-30 | Kabushiki Kaisha Toshiba | Method of separating semiconductor devices |
| JP4550457B2 (ja) * | 2004-03-26 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP4609983B2 (ja) * | 2004-04-30 | 2011-01-12 | ルネサスエレクトロニクス株式会社 | 電極パッドを備える素子 |
| CN102067345A (zh) * | 2008-08-19 | 2011-05-18 | 晶能光电（江西）有限公司 | 用于制备具有双面钝化的半导体发光器件的方法 |
| JP2011129765A (ja) * | 2009-12-18 | 2011-06-30 | Showa Denko Kk | 半導体発光素子の製造方法 |
| JP2012151261A (ja) * | 2011-01-19 | 2012-08-09 | Mitsubishi Heavy Ind Ltd | 半導体発光素子、半導体発光素子の保護膜及びその作製方法 |
| JP2013021175A (ja) * | 2011-07-12 | 2013-01-31 | Toshiba Corp | 半導体発光素子 |
| US8558247B2 (en) * | 2011-09-06 | 2013-10-15 | Toshiba Techno Center Inc. | GaN LEDs with improved area and method for making the same |
| US8828759B2 (en) * | 2011-12-06 | 2014-09-09 | Cooledge Lighting Inc. | Formation of uniform phosphor regions for broad-area lighting systems |
| JP5865695B2 (ja) * | 2011-12-19 | 2016-02-17 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
| JP6221926B2 (ja) * | 2013-05-17 | 2017-11-01 | 日亜化学工業株式会社 | 半導体発光素子およびその製造方法 |
| US9847457B2 (en) * | 2013-07-29 | 2017-12-19 | Seoul Viosys Co., Ltd. | Light emitting diode, method of fabricating the same and LED module having the same |
| CN104377287B (zh) * | 2013-08-14 | 2017-04-26 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
| TWI614914B (zh) * | 2014-07-11 | 2018-02-11 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| DE102015112538B4 (de) * | 2015-07-30 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements |
| WO2017052344A1 (ko) * | 2015-09-25 | 2017-03-30 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 발광장치 |
| US9851056B2 (en) * | 2015-10-16 | 2017-12-26 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip and light emitting device having a slim structure with secured durability |
| CN109920899B (zh) * | 2015-10-16 | 2021-08-06 | 首尔伟傲世有限公司 | 发光二极管芯片以及发光装置 |
| JP6683003B2 (ja) * | 2016-05-11 | 2020-04-15 | 日亜化学工業株式会社 | 半導体素子、半導体装置及び半導体素子の製造方法 |
| TWI720053B (zh) * | 2016-11-09 | 2021-03-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| KR102601417B1 (ko) * | 2017-09-28 | 2023-11-14 | 서울바이오시스 주식회사 | 발광 다이오드 칩 |
| US10892296B2 (en) * | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
| KR102697974B1 (ko) * | 2018-11-21 | 2024-08-22 | 서울바이오시스 주식회사 | 발광 소자 및 이를 포함하는 발광 모듈 |
| EP3920245A4 (en) * | 2019-01-31 | 2022-11-02 | Seoul Viosys Co., Ltd | LIGHT EMITTING DIODE |
| US11380788B2 (en) * | 2020-03-23 | 2022-07-05 | Semiconductor Components Industries, Llc | Structures and methods for source-down vertical semiconductor device |
| TWI891775B (zh) * | 2020-05-04 | 2025-08-01 | 晶元光電股份有限公司 | 發光元件 |
-
2021
- 2021-04-23 TW TW110114806A patent/TWI891775B/zh active
- 2021-04-23 TW TW114124118A patent/TW202541666A/zh unknown
- 2021-04-23 TW TW110114808A patent/TWI891776B/zh active
- 2021-04-27 CN CN202110458091.3A patent/CN113611783A/zh active Pending
- 2021-04-27 CN CN202110458285.3A patent/CN113611784A/zh active Pending
- 2021-04-30 JP JP2021077049A patent/JP2021177548A/ja active Pending
- 2021-05-03 US US17/306,141 patent/US11705545B2/en active Active
- 2021-05-03 KR KR1020210057110A patent/KR20210135424A/ko active Pending
- 2021-05-03 DE DE102021111355.5A patent/DE102021111355A1/de active Pending
- 2021-05-03 US US17/306,136 patent/US11757077B2/en active Active
- 2021-05-04 KR KR1020210057778A patent/KR20210135426A/ko active Pending
-
2023
- 2023-06-05 US US18/205,920 patent/US11990575B2/en active Active
- 2023-08-03 US US18/230,119 patent/US12155019B2/en active Active
-
2024
- 2024-04-19 US US18/641,195 patent/US20240274766A1/en active Pending
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