TWI891775B - 發光元件 - Google Patents

發光元件

Info

Publication number
TWI891775B
TWI891775B TW110114806A TW110114806A TWI891775B TW I891775 B TWI891775 B TW I891775B TW 110114806 A TW110114806 A TW 110114806A TW 110114806 A TW110114806 A TW 110114806A TW I891775 B TWI891775 B TW I891775B
Authority
TW
Taiwan
Prior art keywords
layer
substrate
light
semiconductor
semiconductor stack
Prior art date
Application number
TW110114806A
Other languages
English (en)
Chinese (zh)
Other versions
TW202143511A (zh
Inventor
王心盈
陳之皓
廖健智
陳昭興
駱武聰
柯淙凱
歐震
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Publication of TW202143511A publication Critical patent/TW202143511A/zh
Application granted granted Critical
Publication of TWI891775B publication Critical patent/TWI891775B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW110114806A 2020-05-04 2021-04-23 發光元件 TWI891775B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063019948P 2020-05-04 2020-05-04
US63/019,948 2020-05-04

Publications (2)

Publication Number Publication Date
TW202143511A TW202143511A (zh) 2021-11-16
TWI891775B true TWI891775B (zh) 2025-08-01

Family

ID=78267682

Family Applications (3)

Application Number Title Priority Date Filing Date
TW110114806A TWI891775B (zh) 2020-05-04 2021-04-23 發光元件
TW114124118A TW202541666A (zh) 2020-05-04 2021-04-23 發光元件
TW110114808A TWI891776B (zh) 2020-05-04 2021-04-23 發光元件

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW114124118A TW202541666A (zh) 2020-05-04 2021-04-23 發光元件
TW110114808A TWI891776B (zh) 2020-05-04 2021-04-23 發光元件

Country Status (6)

Country Link
US (5) US11705545B2 (https=)
JP (1) JP2021177548A (https=)
KR (2) KR20210135424A (https=)
CN (2) CN113611783A (https=)
DE (1) DE102021111355A1 (https=)
TW (3) TWI891775B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI891775B (zh) * 2020-05-04 2025-08-01 晶元光電股份有限公司 發光元件
US12243966B2 (en) * 2020-06-24 2025-03-04 Epistar Corporation Light-emitting device
US20220320369A1 (en) * 2021-03-31 2022-10-06 Nichia Corporation Method of manufacturing light-emitting element and light-emitting element
CN115458647B (zh) * 2022-10-31 2025-08-19 天津三安光电有限公司 一种垂直led芯片结构及其制造方法及发光装置
CN115663079B (zh) * 2022-11-01 2026-03-31 厦门三安光电有限公司 一种发光二极管及其制备方法
CN116995175B (zh) * 2023-09-21 2024-02-06 南昌凯捷半导体科技有限公司 一种Ag微棱镜反光结构同侧电极LED及其制作方法
CN118538845A (zh) * 2024-06-05 2024-08-23 厦门三安光电有限公司 一种发光二极管、高压发光二极管及发光装置
KR20260026632A (ko) * 2024-08-19 2026-02-27 삼성디스플레이 주식회사 발광소자, 표시 장치와 그의 제조 방법

Citations (5)

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US20140291612A1 (en) * 2011-12-19 2014-10-02 Showa Denko K.K. Light-emitting diode and method of manufacturing the same
TW201508950A (zh) * 2013-08-14 2015-03-01 Advanced Optoelectronic Tech 發光二極體及其製造方法
US20170108173A1 (en) * 2015-10-16 2017-04-20 Seoul Viosys Co., Ltd. Compact light emitting diode chip and light emitting device including the same
CN107394024A (zh) * 2016-05-11 2017-11-24 日亚化学工业株式会社 半导体元件、半导体装置及半导体元件的制造方法
CN110168755A (zh) * 2017-09-28 2019-08-23 首尔伟傲世有限公司 发光二极管芯片

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US5994205A (en) * 1997-02-03 1999-11-30 Kabushiki Kaisha Toshiba Method of separating semiconductor devices
JP4550457B2 (ja) * 2004-03-26 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP4609983B2 (ja) * 2004-04-30 2011-01-12 ルネサスエレクトロニクス株式会社 電極パッドを備える素子
CN102067345A (zh) * 2008-08-19 2011-05-18 晶能光电（江西）有限公司 用于制备具有双面钝化的半导体发光器件的方法
JP2011129765A (ja) * 2009-12-18 2011-06-30 Showa Denko Kk 半導体発光素子の製造方法
JP2012151261A (ja) * 2011-01-19 2012-08-09 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2013021175A (ja) * 2011-07-12 2013-01-31 Toshiba Corp 半導体発光素子
US8558247B2 (en) * 2011-09-06 2013-10-15 Toshiba Techno Center Inc. GaN LEDs with improved area and method for making the same
US8828759B2 (en) * 2011-12-06 2014-09-09 Cooledge Lighting Inc. Formation of uniform phosphor regions for broad-area lighting systems
JP6221926B2 (ja) * 2013-05-17 2017-11-01 日亜化学工業株式会社 半導体発光素子およびその製造方法
US9847457B2 (en) * 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
TWI614914B (zh) * 2014-07-11 2018-02-11 晶元光電股份有限公司 發光元件及其製造方法
DE102015112538B4 (de) * 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2017052344A1 (ko) * 2015-09-25 2017-03-30 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 발광장치
CN109920899B (zh) * 2015-10-16 2021-08-06 首尔伟傲世有限公司 发光二极管芯片以及发光装置
TWI720053B (zh) * 2016-11-09 2021-03-01 晶元光電股份有限公司 發光元件及其製造方法
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
KR102697974B1 (ko) * 2018-11-21 2024-08-22 서울바이오시스 주식회사 발광 소자 및 이를 포함하는 발광 모듈
EP3920245A4 (en) * 2019-01-31 2022-11-02 Seoul Viosys Co., Ltd LIGHT EMITTING DIODE
US11380788B2 (en) * 2020-03-23 2022-07-05 Semiconductor Components Industries, Llc Structures and methods for source-down vertical semiconductor device
TWI891775B (zh) * 2020-05-04 2025-08-01 晶元光電股份有限公司 發光元件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140291612A1 (en) * 2011-12-19 2014-10-02 Showa Denko K.K. Light-emitting diode and method of manufacturing the same
TW201508950A (zh) * 2013-08-14 2015-03-01 Advanced Optoelectronic Tech 發光二極體及其製造方法
US20170108173A1 (en) * 2015-10-16 2017-04-20 Seoul Viosys Co., Ltd. Compact light emitting diode chip and light emitting device including the same
CN107394024A (zh) * 2016-05-11 2017-11-24 日亚化学工业株式会社 半导体元件、半导体装置及半导体元件的制造方法
CN110168755A (zh) * 2017-09-28 2019-08-23 首尔伟傲世有限公司 发光二极管芯片

Also Published As

Publication number Publication date
TW202143507A (zh) 2021-11-16
TW202143511A (zh) 2021-11-16
DE102021111355A1 (de) 2021-11-04
JP2021177548A (ja) 2021-11-11
CN113611783A (zh) 2021-11-05
US12155019B2 (en) 2024-11-26
KR20210135426A (ko) 2021-11-15
US20230395765A1 (en) 2023-12-07
CN113611784A (zh) 2021-11-05
US20210343913A1 (en) 2021-11-04
US20210343906A1 (en) 2021-11-04
TW202541666A (zh) 2025-10-16
TWI891776B (zh) 2025-08-01
US11990575B2 (en) 2024-05-21
US20240274766A1 (en) 2024-08-15
US11705545B2 (en) 2023-07-18
US11757077B2 (en) 2023-09-12
KR20210135424A (ko) 2021-11-15
US20230317898A1 (en) 2023-10-05

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